Diodes DMG4413LSS User Manual

Product Summary

V

R

(BR)DSS

-30V

7.5mΩ @ V

10.2mΩ @ VGS = -4.5V

DS(ON)

max

= -10V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state

resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

NEW PRODUCT

SO-8

S

S

G

Top View Top View

I

max

D

-12A

-10A

DMG4413LSS

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram below

 Terminals: Finish  Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

DS

D

D

D

G

D

S

Pin-out

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMG4413LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMG4413LSS

Document number: DS31754 Rev. 5 - 2

8 5

P4413LS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

P4413LS

YY

WW

1 4

= Manufacturer’s Marking
P4413LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 5

www.diodes.com

September 2013

© Diodes Incorporated

)

)

r

)

DMG4413LSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -4.5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Steady

State

t<10s

Steady

State

t<10s

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

-30 V

±20 V

-12

-10

-22

-17

-10

-8

-18

-14

A

A

A

A

-100 A

-4 A

Thermal Characteristics

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TA = +70°C

Steady State

t<10s 22

= +25°C

T

A

TA = +70°C

Steady State

t<10s 17

Steady State

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30

 
 
 

-1

1 A

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

V

R

DS(ON)

V

GS(th

g

fs

SD

-1.1 1.6 -2.1 V








6.3

7.9

26

-0.7 -1.0 V

7.5

10.2



DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance

C



iss

C



oss

C



rss

R



G

4965
1487

711

7.3





 

SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

G

Q

GS

Q

GD

t

d(on

t

t



d(off

t



f

DMG4413LSS

Document number: DS31754 Rev. 5 - 2

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16

15

9

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









1.7

1.1
74

°C/W

2.2

1.4
56

°C/W

2.5

-55 to 150 °C

V

V

= 0V, ID = -250µA

GS

A

V

= -30V, VGS = 0V

DS

VGS = 20V, VDS = 0V

V

= VGS, ID = -250A

DS

V

= -10V, ID = -13A

m

S

GS

= -4.5V, ID = -10A

V

GS

V

= -15V, ID = -13A

DS

VGS = 0V, IS = -2.7A

pF
pF
pF

= -15V, VGS = 0V

V

DS

f = 1.0MHz

= 0V, VGS = 0V

V

DS

f = 1.0MHz

= -15V, VGS = -5V

V

nC

ns

DS

= -13A

I

D

V

= -15V, VGS = -10V,

DS

I

= -1A, RG = 6.0

D

September 2013

© Diodes Incorporated

W

W