Diodes DMG4407SSS User Manual

NEW PRODUCT

DMG4407SSS

P-CHANNEL ENHANCEMENT MODE MOSFET

S
S
G

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.075 grams (approximate)

D

Top View

DS
D
D
D

G

Gate Protection

Diode

S

Product Summary

I

max

D

-9.9A

-8.2A

V

(BR)DSS

-30V

R

11m @ V

17m @ VGS = -6V

DS(ON)

max

= -20V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting
 Power Management Functions
 DC-DC Converters

ESD PROTECTED

SO-8

Top View Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMG4407SSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

8 5

G4407SS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

DMG4407SSS

Document number: DS35540 Rev. 6 - 2

8 5

G4407SS

YY

WW

1 4

= Manufacturer’s Marking
G4407SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 6

www.diodes.com

September 2013

© Diodes Incorporated

)

g

g

g

)

r

)

DMG4407SSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -20V

State
t<10s

Steady

Continuous Drain Current (Note 6) VGS = -6V

State
t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

-30 V

±25 V

-9.9

-7.9

-12.5

-10.0

-8.2

-6.5

-11.0

-8.7

A

A

A

A

3.0 A

-80 A

NEW PRODUCT

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

P

Steady State

t<10s 50 °C/W

Steady State

t<10s 41 °C/W

R

P
R
R

T

J, TSTG

JA

JA

JC

D

D

1.45 W
88 °C/W

1.82 W
70 °C/W

7.6 °C/W

-50 to 155 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30 — — V
— —
— —

-1 A

±10 A

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

-1.7 — -3.0 V
—
—
—
—

|

fs

—

9 11

10 13

12.7 17
21 — S

-0.7 -1.0 V

VDS = VGS, ID = -250A

= -20V, ID = 12A

V

m

GS

= -10V, ID = 10A

V

GS

= -6V, ID = 10A

V

GS

= -5V, ID = -10A

V

DS

= 0V, IS = -1A

V

GS

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

t

t

f

—
—
—
—
—
—
—

s

—

d

—
—
—
—

2246

352
294

5.1

20.5
41

7.6

8.0

11.3

15.4

38.0

22.0

—
—
—
—
—
—
—
—
—
—
—
—

pF
pF
pF


nC
nC
nC
nC
ns
ns
ns
ns

= -15V, VGS = 0V,

V

DS

f = 1.0MHz

= 0V, VGS = 0V, f = 1.0MHz

V

DS

= -10V, VDS = -15V,

V

GS

I

= -12A

D

= -15V, VGS = -10V,

V

DD

R

= 1.25, RG = 3,

L

DMG4407SSS

Document number: DS35540 Rev. 6 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated