Diodes DMG4406LSS User Manual

NEW PRODUCT

DMG4406LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D

TA = +25°C

10.3A

V

(BR)DSS

30V

R

11m @ V

15m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

ADVANCE INFORMATION

SO-8

Top View

max

9.3A

S

S

G

Features and Benefits

 100% Unclamped Inductive Switch (UIS) test in production

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Top View

Internal Schematic

DS

D

D

D

G

Equivalent Circuit

e3

D

S

Ordering Information (Note 4)

Part Number Case Packaging

DMG4406LSS-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

8 5

G4406LS

WWYY

1 4

Chengdu A/T Site Shanghai A/T Site

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

8 5

G4406LS

WWYY

1 4

= Manufacturer’s Marking
G4406LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 6

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September 2013

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

DMG4406LSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

NEW PRODUCT

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = 10V

State

t<10s

Steady

Continuous Drain Current (Note 6) VGS = 4.5V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

I

AR

E

AR

30 V

±20 V

10.3

8.3

13.4

10.6

9.3

7.3

12.0

9.5

A

A

A

A

2.5 A
90 A
22 A
24 mJ

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

P

Steady State

t<10s 48 °C/W

Steady State

t<10s 37 °C/W

R

P

R

R

T

J, TSTG



JA

JC

D

JA

D

1.5 W
80 °C/W

2.0 W
61 °C/W

6.4 °C/W

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 — — V
— —
— —

1 A

±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1.4 — 2.0 V
—
—
—
—

8 11
12 15
32 - S

0.70 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 12A

V

m

GS

V

= 4.5V, ID = 10A

GS

VDS = 5V, ID = 12A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

s

d

t

t

f

t

r

Q

r

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

—
—
—
—
—
—
—
—
—
—
—
—
—
—

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1281

145
125

1.2

12.5

26.7

3.6

4.4

5.2

21.2

22.3

5.1

8.5

7.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—

= 15V, VGS = 0V,

V

pF



nC

ns

ns
nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, ID = 12A

DS

= 15V, VGS = 10V,

V

DD

= 1.25, RG = 3,

R

L

IF=12A, di/dt=500A/µs

September 2013

© Diodes Incorporated

R

CUR

RENT

RAIN

C

URR

N

T

R,DR

OUR

ON-R

R

R

OUR

ON-R

R

RAIN

OUR

C

R

R

OUR

C

ON-R

TANC

NEW PRODUCT

DMG4406LSS

30

V= 10V

25

(A)

20

GS

V = 4.5VGS

V = 4.0VGS

V = 3.5VGS

V = 3.0VGS

15

30

V = 5.0VDS

25

(A)

20

E

15

AIN

10

D

I, D

5

0

0 0.5 1.0 1.5 2.0

V , DRAIN -SOURCE VOLTAGE(V)

DS

V = 2.5VGS

Fig. 1 Typical Output Characteristics

0.04



10

D

I, D

5

0

01 234

V , GATE-SOURCE VOLTAGE (V)

GS

T = 150CA

T = 125CA

T = 85CA

T = 25CA

T = -55CA

Fig. 2 Typical Transfer Characteristics

0.04



V = 4.5VGS

ADVANCE INFORMATION

0.03

ESISTANCE( )

0.02

CE

AIN-S

0.01

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.03

ESISTANCE( )

CE

AIN-S

0.02

0.01

T = 125 CA

T = 150 CA

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

T = 85CA

T = 25CA

T = -55CA



E ( )

E

ESIS

-S
(NORMALIZED)

E

V=.5V

4

GS

I=A

5

D

, D

DS(ON)

ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 5 On-Resistance Variation with Temperature

AIN-S

, D

DS(ON)

-50 -25 0 25 50 75 100 125 150



T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

V = 10V

GS

I= A

10

D



DMG4406LSS

Document number: DS35539 Rev. 8 - 2

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GATE THRESH

O

O

TAG

OUR

CE CUR

REN

T

C

UNC

TIO

N CAPACITAN

C

F

GE CUR

REN

T

GAT

O

URC

OLTAG

R

N

C

URREN

T

NEW PRODUCT

DMG4406LSS

30

E(V)

L

25

(A)

20

LD V

15

10

S

I, S

5

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

2,000

1,800

ADVANCE INFORMATION

)

E (p

1,600

f = 1MHz

1,400

1,200

C

iss

1,000

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10,000

T =150°C

A

1,000

(nA)

T =125°C

A

100

800

T =85°C

A

600

, J

400

T

C

200

0

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

oss

C

rss

Fig. 9 Typical Junction Capacitance

10

10

DSS

I, LEAKA

T = 25°C

A

1

0102030

V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

1,000

9

8

E (V)

f = 1MHz

7

6

E V

5

4

E-S

3

2

GS

V,

1

0

0 5 10 15 20 25 30

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Gate-Charge Characteristics

100

R

DS(on)

(A)

Limited

10

DC

P = 10s

1

AI

D

I, D

0.1

0.01

0.01 0.1 1 10 100

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10µs

W

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 SOA, Safe Operation Area

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

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September 2013

© Diodes Incorporated

T

R

T T

HER

R

T

C

NEW PRODUCT

Package Outline Dimensions

ADVANCE INFORMATION

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

1

D = 0.7

E

D = 0.5

AN

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)

Fig. 13 Transient Thermal Resistance

E1

E

A1

Detail ‘A’

L

0.254
Gauge Plane

Seating Plane

7°~9

°

Detail ‘A’

A3

h

°

45

e

b

D

A2

A

D = 0.9

R (t) = r(t) * R



JA JA

R = 60°C/W



JA

Duty Cycle, D = t1/ t2

Dim Min Max

SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5
D 4.85 4.95
E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0 8



All Dimensions in mm

DMG4406LSS

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

X

C2

Y

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

C1

5 of 6

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Dimensions Value (in mm)

X 0.60

Y 1.55
C1 5.4
C2 1.27

September 2013

© Diodes Incorporated

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

ADVANCE INFORMATION

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG4406LSS

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

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