Diodes DMG4406LSS User Manual

NEW PRODUCT

DMG4406LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D

TA = +25°C

10.3A

V

(BR)DSS

30V

R

11m @ V

15m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

ADVANCE INFORMATION

SO-8

Top View

max

9.3A

S

S

G

Features and Benefits

 100% Unclamped Inductive Switch (UIS) test in production

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Top View

Internal Schematic

DS

D

D

D

G

Equivalent Circuit

e3

D

S

Ordering Information (Note 4)

Part Number Case Packaging

DMG4406LSS-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

8 5

G4406LS

WWYY

1 4

Chengdu A/T Site Shanghai A/T Site

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

8 5

G4406LS

WWYY

1 4

= Manufacturer’s Marking
G4406LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 6

www.diodes.com

September 2013

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

DMG4406LSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

NEW PRODUCT

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = 10V

State

t<10s

Steady

Continuous Drain Current (Note 6) VGS = 4.5V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

I

AR

E

AR

30 V

±20 V

10.3

8.3

13.4

10.6

9.3

7.3

12.0

9.5

A

A

A

A

2.5 A
90 A
22 A
24 mJ

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

P

Steady State

t<10s 48 °C/W

Steady State

t<10s 37 °C/W

R

P

R

R

T

J, TSTG



JA

JC

D

JA

D

1.5 W
80 °C/W

2.0 W
61 °C/W

6.4 °C/W

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 — — V
— —
— —

1 A

±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1.4 — 2.0 V
—
—
—
—

8 11
12 15
32 - S

0.70 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 12A

V

m

GS

V

= 4.5V, ID = 10A

GS

VDS = 5V, ID = 12A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

s

d

t

t

f

t

r

Q

r

DMG4406LSS

Document number: DS35539 Rev. 8 - 2

—
—
—
—
—
—
—
—
—
—
—
—
—
—

2 of 6

www.diodes.com

1281

145
125

1.2

12.5

26.7

3.6

4.4

5.2

21.2

22.3

5.1

8.5

7.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—

= 15V, VGS = 0V,

V

pF



nC

ns

ns
nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, ID = 12A

DS

= 15V, VGS = 10V,

V

DD

= 1.25, RG = 3,

R

L

IF=12A, di/dt=500A/µs

September 2013

© Diodes Incorporated