Diodes DMG3420U User Manual
DMG3420U
N-CHANNEL ENHANCEMENT MODE MOSFET
G
TOP VIEW
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
D
Gate
S
Equivalent Circuit
Source
e3
Product Summary
V
R
(BR)DSS
20V
21m @ V
25m @ VGS = 4.5V
DS(ON)
max
= 10V
GS
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
NEW PRODUCT
General Purpose Interfacing Switch
Power Management Functions
SOT23
TOP VIEW
I
D
6.5A
5.2A
max
Ordering Information (Notes 4 & 5)
Part Number Qualification Case Packaging
DMG3420U-7 Standard SOT23 3000/Tape & Reel
DMG3420UQ-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http:// www.diodes.com/products/packages.html
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
G31
Chengdu A/T Site
YM
DMG3420U
Document number: DS31867 Rev. 5 - 2
G31
Shanghai A/T Site
www.diodes.com
G31 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
1 of 6
September 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
= +25°C
Continuous Drain Current (Note 6)
Steady
State
T
A
T
= +85°C
A
Pulsed Drain Current (Note 7)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
NEW PRODUCT
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 6) R
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 — — V
— — 1.0 µA
— — ±100 nA
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
DS(ON)
|Y
V
GS(th)
fs
SD
0.5 0.95 1.2 V
—
— 9 — S
|
— 0.75 1.0 V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
g
gs
r
f
DMG3420U
Document number: DS31867 Rev. 5 - 2
—
—
—
—
—
—
—
— 6.5 — ns
— 8.3 — ns
— 21.6 — ns
— 5.3 — ns
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www.diodes.com
V
DSS
V
GSS
I
D
I
DM
P
D
θJA
T
J, TSTG
21 29
25 35
34 48
65 91
434.7
69.1
61.2
1.53
5.4
0.9
1.5
—
—
—
—
—
—
—
DMG3420U
20 V
±12 V
5.47
3.43
20 A
0.74 W
167 °C/W
-55 to +150 °C
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 10V, ID = 6A
GS
V
= 4.5V, ID = 5A
m
GS
V
= 2.5V, ID = 4A
GS
V
= 1.8V, ID = 2A
GS
VDS = 5V, ID = 3.8A
VGS = 0V, IS = 1A
pF
= 10V, VGS = 0V,
V
pF
pF
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
= 4.5V, VDS = 10V,
V
nC
nC
GS
= 6A
I
D
= 10V, VGS = 5V,
V
DD
= 1.7, RG = 6
R
L
A
September 2013
© Diodes Incorporated
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