Diodes DMG3418L User Manual

M

Product Summary

V

R

(BR)DSS

30V

60mΩ @V

70mΩ @VGS = 4.5V

DS(ON) max

= 10V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

• Motor Control

ADVANCED INFORMATION

ADVANCED INFORMATION

Top View

I

D

4 A
3 A

Gate

Internal Schematic

DMG3418L

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminals Connections: See Diagram Below

• Weight: 0.008 grams (approximate)

Source

D

G

Top View

S

Drain

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMG3418L-7 Standard SOT23 3000/Tape & Reel

DMG3418L-13 Standard SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG3418L

Document number: DS36366 Rev. 3 - 2

Chengdu A/T Site

Shanghai A/T Site

www.diodes.com

18G = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

1 of 5

March 2014

© Diodes Incorporated

θ

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5) TA = +25°C
T

= +70°C

A

Drain Current (Note 6) Pulsed

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5) TA = +25°C
T

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

Operating and Storage Temperature Range

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

P

R

T

J, TSTG

DMG3418L

D

JA

30 V

±12

4.0

3.1

V

A

15 A

1.4

0.9

W

90 °C/W

-55 to +150 °C

Electrical Characteristics (@T

ADVANCED INFORMATION

ADVANCED INFORMATION

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

I

DSS

DSS

GSS

30

⎯ ⎯

⎯ ⎯

⎯ ⎯

V

1 µA

±100

nA

V

= 0V, ID = 250µA

GS

V

= 30V, VGS = 0V

DS

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Source-Drain Diode Forward Voltage

V

GS(th)

R

DS(ON)

V

SD

0.5

⎯
⎯

⎯

⎯

25
30

50

⎯ ⎯

1.5 V

60
70

150

1.2 V

VDS = VGS, ID = 250µA

V

mΩ

V
V

VGS = 0V, IS = 2.0A

= 10V, ID = 4A

GS

= 4.5V, ID = 3A

GS

= 2.5V, ID = 2A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

iss

C

oss

C

⎯

rss

Q

g

Q

gs

Q

⎯

gd

t

D(on)

t

r

t

⎯

D(off)

t

⎯

f

⎯

⎯

⎯

⎯

⎯

⎯

464.3

49.5

43.8

5.5

1.1

1.8

1.9

1.6

10.3

2.0

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

pF

pF

pF

nC

ns

ns

ns

ns

= 15V, VGS = 0V

V

DS

f = 1.0MHz

= 4.5V, VDS = 15V,

V

GS

I

= 4A

D

= 15V, V

V

DD

R

GEN

GEN

= 3Ω, RL = 3.75Ω

= 10V,

DMG3418L

Document number: DS36366 Rev. 3 - 2

2 of 5

www.diodes.com

March 2014

© Diodes Incorporated