Diodes DMG3415U User Manual
DMG3415U
Document number: DS31735 Rev. 11 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG3415U
34P
YM
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
TA = +25°C
-20V
42.5mΩ @ VGS = -4.5V
-4.0A
71mΩ @ VGS = -1.8V
-2.0A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Part Number
Compliance
Case
Packaging
DMG3415U-7
Standard
SOT23
3,000/Tape & Reel
DMG3415UQ-7
Automotive
SOT23
3,000/Tape & Reel
DMG3415U-13
Standard
SOT23
10,000/Tape & Reel
Year
2009
2010
2011
2012
2013
2014
2015
Code
W X Y Z A B C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N
D
Top View
Internal Schematic
Top View
Equivalent Circuit
D
G
S
So urce
G ate
P ro te ctio n
D iod e
G ate
Dra in
ESD PROTECTED TO 3kV
SOT23
Chengdu A/T Site
Shanghai A/T Site
34P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
e3
Y
YM
P-CHANNEL ENHANCEMENT MODE MOSFET
Ordering Information (Note 4)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
DMG3415U
Document number: DS31735 Rev. 11 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG3415U
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20
V
Gate-Source Voltage
V
GSS
±8
V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.0
-3.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
-30
A
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
PD
0.9
W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
139
°C/W
Thermal Resistance, Junction to case (Note 5)
R
θJC
32
°C/W
Operating and Storage Temperature Range
T
J, TSTG
-55 to +150
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20
—
—
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
I
DSS
—
—
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
I
GSS
—
—
10
µA
VGS = 8.0V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.3
-0.55
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
31
42.5
mΩ
VGS = -4.5V, ID = -4.0A
—
40
53
VGS = -2.5V, ID = -3.5A
—
51
71
VGS = -1.8V, ID = -2.0A
Forward Transfer Admittance
|Yfs|
—
3 — S
V
DS
= -5V, ID = -4A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
294 — pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
C
oss
—
104 — pF
Reverse Transfer Capacitance
C
rss
—
25 — pF
Gate Resistnace
Rg
—
250 —Ω
V
DS
= 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Qg
—
9.1 — nC
VGS = -4.5V, VDS = -10V
ID = -4A
Gate-Source Charge
Qgs
—
1.5 — nC
Gate-Drain Charge
Qgd
—
1.7 — nC
Turn-On Delay Time
t
D(on)
—
71 — ns
VDS = -10V, VGS = -4.5V,
RD = 2.5Ω, RG = 3.0Ω, ID = -1A
Turn-On Rise Time
tr
—
117 — ns
Turn-Off Delay Time
t
D(off)
—
795 — ns
Turn-Off Fall Time
tf
—
393 — ns
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
6. Short duration pulse test used to minimize self-heating effect.
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