Diodes DMG3414U User Manual
M
Features
Low On-Resistance
25mΩ @ V
29mΩ @ V
37mΩ @ V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
= 4.5V
GS
= 2.5V
GS
= 1.8V
GS
TOP VIEW
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
D
Gate
Source
Internal Schematic TOP VIEW
G
DMG3414U
e3
S
Ordering Information (Note 4)
Part Number Case Packaging
DMG3414U-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG3414U
Document number: DS31739 Rev. 4 - 2
MN8
Chengdu A/T Site
YM
MN8
Shanghai A/T Site
www.diodes.com
MN8 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
1 of 6
September 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
= +25°C
Continuous Drain Current (Note 5)
Steady
State
T
A
= +70°C
T
A
Pulsed Drain Current (Note 6)
Thermal Characteristics
NEW PRODUCT
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C R
Operating and Storage Temperature Range
Electrical Characteristics (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG3414U
Document number: DS31739 Rev. 4 - 2
Characteristic Symbol Value Unit
= +25°C, unless otherwise specified.)
A
BV
DSS
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
|
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
www.diodes.com
20
0.5
829.9
85.3
81.2
40.1
2 of 6
V
DSS
V
GSS
I
D
I
DM
P
D
θJA
T
J, TSTG
1.0 µA
±100 nA
0.9 V
19 25
22 29
28 37
7
9.6
1.5
3.5
8.1
8.3
9.6
DMG3414U
20 V
±8 V
4.2
3.2
30 A
0.78 W
162 °C/W
-55 to +150 °C
V
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
VDS = VGS, ID = 250µA
V
= 4.5V, ID = 8.2A
GS
mΩ
V
= 2.5V, ID = 3.3A
GS
V
= 1.8V, ID = 2.0A
GS
S
VDS = 10V, ID = 4A
pF
V
= 10V, VGS = 0V
pF
pF
DS
f = 1.0MHz
nC
nC
V
GS
= 4.5V, V
nC
ns
ns
ns
= 10V, V
V
DD
R
= 10, RG = 6, ID = 1A
L
GS
ns
A
= 10V, ID = 8.2A
DS
= 4.5V,
September 2013
© Diodes Incorporated
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