Diodes DMG3413L User Manual

n

NEW PRODUCT

Product Summary

I

V

(BR)DSS

-20V

R

95mΩ @ V

130mΩ @ VGS = -2.5V

DS(on) max

= -4.5V

GS

D

TA = +25°C

3.0A

2.5A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters
 Power Management Functions
 Analog Switch

SOT23

Top View

D

G

Pin Configuration

DMG3413L

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0072 grams (approximate)

Drai

Gate

S

Internal Schematic

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMG3413L-7 SOT23 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG3413L

Document number: DS35051 Rev. 4 - 2

G33

Chengdu A/T Site

YM

G33

Shanghai A/T Site

www.diodes.com

G33 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

1 of 6

September 2013

© Diodes Incorporated

)

g

g

g

g

)

r

)

DMG3413L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

P

Steady State

t<10s 115

Steady State

t<10s 61

R

P
R
R

T

J, TSTG

θJA

θJA

θJC

D

D

0.7 W

184

°C/W

1.3 W
94

°C/W

25

-55 to +150 °C

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

NEW PRODUCT

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -4.5V

State
t<10s

Steady

Continuous Drain Current (Note 6) VGS = -2.5V

State
t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

-20 V

8

3.0

2.4

3.7

2.9

2.5

2.0

3.2

2.5

V
A

A

A

A

1.9 A

20 A

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20
— —
— —

—

— V

-1.0 µA

±100 nA

VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = 8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

fs

SD

-0.6 -0.55 -1.3 V
73 95

—

95 130

146 190

|

—
—

8 - S

-0.8 -1.25 V

VDS = VGS, ID = -250µA
V

= -4.5V, ID = -3.0A

mΩ

GS

= -2.5V, ID = -2.6A

V

GS

= -1.8V, ID = -1A

V

GS

= -5V, ID = -3A

V

DS

= 0V, IS = -1A

V

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

C

R
Q

Q

Q

t

D(on

t

D(off

iss
oss
rss

t

t

s
d

f

—
—
—
—
—
—
—
—
—
—
—

857

54
49

12.3

9.0

1.6

1.1

9.7

17.7

268.8

64.2

—
—
—
—
—
—
—
—
—
—
—

pF
pF
pF

Ω
nC
nC
nC
ns
ns
ns
ns

= -10V, VGS = 0V

V

DS

f = 1.0MHz

= 0V, V

V

DS

= -4.5V, V

V

GS

= -15V, V

V

DS

R

= 15, RG = 6.0ID = -1A

L

= 0V, f = 1.0MHz

GS

= -15V, ID = -4A

DS

= -10V,

GS

DMG3413L

Document number: DS35051 Rev. 4 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated