Diodes DMG3407SSN User Manual

DMG3407SSN

Product Summary

V

R

(BR)DSS

50m @ V

-30V
72m @ VGS = -4.5V

DS(ON)

GS

= -10V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• Load Switch

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

) and yet maintain superior switching

DS(on)

SC59

Top View Pin Configuration

I

D

TA = 25°C

-4.0A

-3.3A

Gate

Internal Schematic

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Weight: 0.014 grams (approximate)

Drain

D

Source

G

S

Ordering Information (Note 3)

Part Number Case Packaging

DMG3407SSN-7 SC59 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

G32

YM

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

G32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

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© Diodes Incorporated

April 2012

θ

)

g

g

g

g

g

)

r

)

r

r

DMG3407SSN

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)

Thermal Characteristics @T

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

-30 V

±20 V

-4.0

-3.2

-4.6

-3.6

-3.3

-2.6

-3.9

-3.1

A

A

A

A

-30 A

-2.0 A

Steady

State
t<10s

Steady

State
t<10s

= 25°C unless otherwise specified

A

T

A

T

A

T

A

T

A

T

A

T

A

T

A

T

A

= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

T

= 25°C

A

TA = 70°C

Steady state

t<10s 118

T

= 25°C

A

TA = 70°C

Steady state

t<10s 71

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1.1

0.7

166

1.8

1.1

W

°C/W

W

98

°C/W

18

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-30 - - V

- - -1

- - ±100 nA

VGS = 0V, ID = -250A

μA

VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.0 -1.5 -2.1 V

- 39 50

- 56 72

|

- 8.2 - S

- -0.75 -1.1 V

VDS = VGS, ID = -250A

= -10V, ID = -4.1A

V

mΩ

GS

= -4.5V, ID = -3.0A

V

GS

VDS = -5V, ID = -4A

VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s R

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C
C
C

Q

Q

t

D(on

t

D(off

iss

oss

rss

R
Q
Q

t

t

f

t

r

Q

r

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

466 582 700

80 114 148
47 76 105

s
d

2 5 8

10.6 13.3 16

5.2 6.5 8.5

1.3 1.7 2

1.1 1.9 2.7

- 6.0 -

- 12.9 -

- 35.4 -

- 30.7 -

6.8 8.5 10.2 ns

5.5 7.0 8.5 nC

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= -15V, VGS = 0V,

V

DS

pF

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
VGS = -10V, VDS = -15V, ID = -4A

nC

ns

= -4.5V, VDS = -15V,ID = -4A

V

GS

= -10V, VDS = -15V,

V

GS

= 3.6, RG = 3

R

L

I

= 4A, di/dt = 100A/s

F

is based on t<10s R

D

θJA

θJA

April 2012

© Diodes Incorporated