Diodes DMG3407SSN User Manual

DMG3407SSN

Product Summary

V

R

(BR)DSS

50m @ V

-30V 72m @ VGS = -4.5V

DS(ON)

GS

= -10V

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management

applications.

• Load Switch

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

) and yet maintain superior switching

DS(on)

SC59

Top View Pin Configuration

I

D

TA = 25°C

-4.0A

-3.3A

Gate

Internal Schematic

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Weight: 0.014 grams (approximate)

Drain

D

Source

G

S

Ordering Information (Note 3)

Part Number Case Packaging

DMG3407SSN-7 SC59 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

G32

YM

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

G32 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September)

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θ

)

g

)

r

)

r

DMG3407SSN

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5)

Thermal Characteristics @T

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

-30 V

±20 V

-4.0

-3.2

-4.6

-3.6

-3.3

-2.6

-3.9

-3.1

A

-30 A

-2.0 A

Steady

State t<10s

Steady

State t<10s

= 25°C unless otherwise specified

A

T

A

T

A

T

A

T

A

T

A

T

A

T

A

T

A

= 25°C = 70°C = 25°C = 70°C = 25°C = 70°C = 25°C = 70°C

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

T

= 25°C

A

TA = 70°C

Steady state

t<10s 118

T

= 25°C

A

TA = 70°C

Steady state

t<10s 71

P

R

P

R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1.1

0.7

166

1.8

1.1

W

°C/W

W

98

°C/W

18

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

I

DSS DSS GSS

-30 - - V

- - -1

- - ±100 nA

VGS = 0V, ID = -250A

μA

VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

-1.0 -1.5 -2.1 V

- 39 50

- 56 72

|

- 8.2 - S

- -0.75 -1.1 V

VDS = VGS, ID = -250A

= -10V, ID = -4.1A

V

mΩ

GS

= -4.5V, ID = -3.0A

V

GS

VDS = -5V, ID = -4A

VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s R

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C C C

Q

t

D(on

t

D(off

iss

oss

rss

R Q Q

t

f

t

r

Q

r

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

466 582 700

80 114 148 47 76 105

s d

2 5 8

10.6 13.3 16

5.2 6.5 8.5

1.3 1.7 2

1.1 1.9 2.7

- 6.0 -

- 12.9 -

- 35.4 -

- 30.7 -

6.8 8.5 10.2 ns

5.5 7.0 8.5 nC

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= -15V, VGS = 0V,

V

DS

pF

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz VGS = -10V, VDS = -15V, ID = -4A

nC

ns

= -4.5V, VDS = -15V,ID = -4A

V

GS

= -10V, VDS = -15V,

V

GS

= 3.6, RG = 3

R

L

I

= 4A, di/dt = 100A/s

F

is based on t<10s R

D

θJA

April 2012

RAIN C

URREN

T

RAIN C

URREN

T

R,DR

OUR

CE ON-R

TANC

R

OUR

ON-R

R

OUR

C

R

OUR

CE ON-R

TANC

DMG3407SSN

20

V = -4.5V

GS

V = -4.0V

GS

16

(A)

V = -3.5V

GS

12

8

D

-I , D

V = -3.0V

GS

4

V = -2.5V

V = -2.0V

0

012345

-V , DRAIN -SOURCE VOLTAGE(V)

DS

GS

Fig. 1 Typical Output Characteristics

0.12

Ω

E( )

0.10

ADVANCE INFORMATION

ESIS

0.08

0.06

Ω

ESISTANCE( )

CE

10

(A)

D

-I , D

V = -5.0V

DS

8

6

4

T = 150C

°

2

0

A

T = 125C

°

A

T = -55C

A

-V , GATE-SOURCE VOLT AG E (V)

GS

Fig. 2 Typical Transfer Characteristics

V = -4.5V

GS

T = 85C

A

T = 25C

°

A

°

T = 150C

°

A

T = 125C

A

T = 85C

°

A

T = 25C

°

A

°

0.04

AIN-S

0.02

DS(ON)

0

024 6810

-I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and G at e Voltage

1.7

AIN-S , D

DS(ON)

024 6810

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.12

Ω

T = -55C

°

A

E ( )

1.5

E

1.3

1.1

AIN-S

0.10

V=.5V

-4

ESIS

0.08

GS

I= A

-5

D

0.06

, D

V= -10V

0.9

DS(ON)

ON-RESISTANCE (Normalized)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 5 On-Resistance Variation with T emperature

0.04

AIN-S , D

0.02

DS(ON)

0

-50 -25 0 25 50 75 100 125 150

°

T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

GS

I= A

-10

D

°

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

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G

TE THRESH

O

OLT

G

OUR

CE CUR

R

T

C

UNC

TIO

N CAPACITAN

C

F

GE CUR

RENT

G

T

OUR

C

OLTAG

P

T

R

T

P

OWER

DMG3407SSN

2.5

E(V)

2.0

A

1.5

LD V

(A) EN

10

8

6

1.0

4

A

S

0.5

GS(TH)

-V , 0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

1,000

ADVANCE INFORMATION

)

C

iss

E (p

C

oss

100

C

rss

, J

T

f = 1MHz

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Capac itance

-I , S

2

0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10,000

1,000

(nA)

100

T =150°C

A

T =125°C

A

T =85°C

A

10

DSS

1

-I , LEAKA

T = 25°C

A

0.1 2 6 10 14 18 22 26 30

-V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

10

E (V)

E V

8

6

400

350

(W)

300

250

Single Pulse

°

R = 164C/W

θ

JA

R = R * r

(t) (t)

θθ

JA JA

T -T = P * R

JAθJA(t)

200

4

E-S A

2

GS

-V ,

0

0481216

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Gate-Charge Characteristics

ANSIEN

150

EAK

100

,

(pk)

50

0

0.00001 0.001 0.1 10 1,000 t1, Pulse Duration Time (sec)

Fig. 12 Single Pulse Maximum Power Dissipation

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

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T

R

T T

HER

R

TANC

DMG3407SSN

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 164°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 13 Transient Th er m al Resis t ance

Package Outline Dimensions

ADVANCE INFORMATION

K

J

Suggested Pad Layout

Y

Z

A

C

B

G

H

N

M

D

L

SC59

Dim Min Max Typ

A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D - - 0.95 G - - 1.90 H 2.90 3.10 3.00

J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75

0° 8° -

α

All Dimensions in mm

Dimensions Value (in mm)

Z 3.4

C

X 0.8 Y 1.0 C 2.4 E 1.35

X E

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

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DMG3407SSN

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCE INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG3407SSN

Document number: DS35135 Rev. 5 - 2

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Diodes DMG3407SSN User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual