Diodes DMG3402L User Manual

Product Summary

V

R

(BR)DSS

52m @ V

30V

65m @ VGS = 4.5V
85m @ VGS = 2.5V

DS(ON)

GS

= 10V

TA = +25°C

Applications

 DC-DC Converters

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

TOP VIEW

DMG3402L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

I

D

4A
3A
2A

 Low On-Resistance:

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin annealed over Copper leadframe.

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

SOT23

Gate

EQUIVALENT CIRCUIT

Solderable per MIL-STD-202, Method 208

Drain

D

GS

Source

Pin Configuration

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMG3402L-7 SOT23 3000/Tape & Reel

DMG3402L-13 SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http//:www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N32

DMG3402L

Document number: DS36077 Rev. 2 - 2

N32 = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

1 of 5

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December 2013

© Diodes Incorporated

)

g

g

g

)

r

)

DMG3402L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Body-Diode Continuous Current (Note 5)

V

DSS

V

GSS

ID
IS

30 V

12

4.0 A

1.5 A

V

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

P

T

J, TSTG

JA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

30

 
 
 

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS(ON)

|Yfs| 
V

SD

0.6 — 1.4 V




—

—

—

6.6

 

DYNAMIC CHARACTERISTICS(Note 7)

Gate Resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

R

g

Q

g

Q



Q



s

Q



d

t

D(on

t

t

D(off

t



f

C



iss

C



oss

C



rss











2.2

11.7

5.5

1.1

1.8

1.9

1.6

10.3

2.0

464

49.5

43.8

DMG3402L

Document number: DS36077 Rev. 2 - 2

2 of 5

www.diodes.com

1.4 W
90 °C/W

-55 to +150 °C

V

V

= 0V, ID = 250µA

1 µA

100

nA

GS

V

= 30V, VGS = 0V

DS

VGS = ±12V, VDS = 0V

VDS = VGS, ID = 250µA

52
65
85



1.16 V

























VGS = 10V, ID = 4A

m

VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A

S

VDS = 5V, ID = 3.1A
VGS = 0V, IS = 2.0A

=0V, VGS = 0V,

V

DS



f = 1MHz

= 10 V, VDS = 15V,

V

nC

nC
nC
nC

GS

I

= 4 A

D

V

=10 V, VDS = 15V,

GS

I

= 4 A

D

ns
ns

V

= 15V, V

DD

R

ns

GEN

ns
pF

VDS = 15V, VGS = 0V

pF

f = 1.0MHz

pF

= 10V,

GEN

=3, RL = 3.75

December 2013

© Diodes Incorporated