Product Summary
V
R
(BR)DSS
52m @ V
30V
65m @ VGS = 4.5V
85m @ VGS = 2.5V
DS(ON)
GS
= 10V
TA = +25°C
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
TOP VIEW
DMG3402L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
I
D
4A
3A
2A
Low On-Resistance:
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT23
Gate
EQUIVALENT CIRCUIT
Solderable per MIL-STD-202, Method 208
Drain
D
GS
Source
Pin Configuration
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMG3402L-7 SOT23 3000/Tape & Reel
DMG3402L-13 SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http//:www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N32
DMG3402L
Document number: DS36077 Rev. 2 - 2
N32 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
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December 2013
© Diodes Incorporated
)
g
g
g
)
r
)
DMG3402L
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Body-Diode Continuous Current (Note 5)
V
DSS
V
GSS
ID
IS
30 V
12
4.0 A
1.5 A
V
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range
P
T
J, TSTG
JA
D
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
30
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS(ON)
|Yfs|
V
SD
0.6 — 1.4 V
—
—
—
6.6
DYNAMIC CHARACTERISTICS(Note 7)
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
R
g
Q
g
Q
Q
s
Q
d
t
D(on
t
t
D(off
t
f
C
iss
C
oss
C
rss
2.2
11.7
5.5
1.1
1.8
1.9
1.6
10.3
2.0
464
49.5
43.8
DMG3402L
Document number: DS36077 Rev. 2 - 2
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1.4 W
90 °C/W
-55 to +150 °C
V
V
= 0V, ID = 250µA
1 µA
100
nA
GS
V
= 30V, VGS = 0V
DS
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250µA
52
65
85
1.16 V
VGS = 10V, ID = 4A
m
VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A
S
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 2.0A
=0V, VGS = 0V,
V
DS
f = 1MHz
= 10 V, VDS = 15V,
V
nC
nC
nC
nC
GS
I
= 4 A
D
V
=10 V, VDS = 15V,
GS
I
= 4 A
D
ns
ns
V
= 15V, V
DD
R
ns
GEN
ns
pF
VDS = 15V, VGS = 0V
pF
f = 1.0MHz
pF
= 10V,
GEN
=3, RL = 3.75
December 2013
© Diodes Incorporated
R
CUR
R
T
R
N C
URREN
O
O
O
O
R
R
N-SOUR
C
R
R
OUR
CE ON-R
C
DMG3402L
10.0
V = 10VGS
20
V = 5.0VDS
18
V= 4.5V
GS
V= 3.5V
GS
V= 3.0V
GS
V= 2.0V
V= 2.5V
GS
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
V= 1.5V
Figure 1 Typical Output Characteristics
16
14
T (A)
12
10
8
AI
6
D
I, D
4
GS
2
0
01234
0.08
V = 4.5VGS
T = 150°C
A
T = 125°C
A
T = 85°C
A
V , GATE-SOURCE VOLTAGE (V)
GS
T = 25°C
A
T = -55°C
A
Figure 2 Typical Transfer Characteristics
(A)
EN
AIN
D
I, D
8.0
6.0
4.0
2.0
0.0
1
0.07
T = 150°C
A
T = 25°C
A
T = 85°C
A
T = -55°C
A
V = 4.5V
GS
I= 3A
D
V=V
10
GS
I= 6A
D
N-RESISTANCE ( )
0.1
V= 2.5V
URCE
DS(ON)
R , DRAIN-S
0.01
13579
GS
V= 4.5V
V= 10V
GS
I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
V=V
10
1.8
1.6
E
GS
I= 6A
D
1.4
1.2
AI
, D
1
DS(ON)
0.8
ON-RESISTANCE (NORMALIZED)
0.6
0.4
-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variation with Temperature
GS
V = 4.5V
GS
I= 3A
D
V=.5V
2
GS
I= 2A
D
0.06
T = 125°C
0.05
N-RESISTANCE ( )
A
0.04
URCE
0.03
0.02
0.01
DS(ON)
R, DRAIN-S
0
04 8121620
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
0.1
Drain Current and Temperature
E ( )
0.08
V=.5V
2
ESISTAN
GS
I= 2A
D
0.06
0.04
AIN-S
0.02
, D
DS(ON)
0
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
DMG3402L
Document number: DS36077 Rev. 2 - 2
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December 2013
© Diodes Incorporated
GATE THRESH
O
OLTAG
OUR
CE CUR
REN
C
UNC
TION CAPACITANC
F
GATE THRESH
O
OLTAG
2
E (V)
1.6
I= 1mA
1.2
LD V
0.8
D
I = 250µA
D
0.4
GS(th)
V,
0
-50 -25 0 25 50
T , JUNCTION TEMPERATURE ( C)
J
75
100 125 150
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1,000
)
E (p
100
DMG3402L
20
18
16
14
T (A)
12
10
8
6
S
I, S
4
2
0
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
10
C
iss
E (V)
8
6
LD V
T= 25°C
A
V = 15V
DS
I=A
4
D
C
oss
C
, J
T
f = 1MHz
rss
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
4
2
GS
V
0
024681012
Q(nC)
, TOTAL GATE CHARGE
g
Figure 10 Gate Charge
Package Outline Dimensions
DMG3402L
Document number: DS36077 Rev. 2 - 2
K
J
A
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
C
B
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
H
G 1.78 2.05 1.83
H 2.80 3.00 2.90
K1
F
D
G
L
M
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
0° 8° -
All Dimensions in mm
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DMG3402L
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
Y
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
DMG3402L
Document number: DS36077 Rev. 2 - 2
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