Diodes DMG3401LSN User Manual

q

p

Product Summary

V

(BR)DSS

-30V

R

50mΩ @ V
60mΩ @ VGS = -4.5V
85mΩ @ VGS = -2.5V

DS(on) max

= -10V

GS

TA = 25°C

Description

This new generation Small-Signal enhancement mode MOSFET
features low on-resistance and fast switching, making it ideal for high
efficiency power management applications.

Applications

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

NEW PRODUCT

SC59

Top View

I

D

-3.7A

-3.3A

-2.7A

Gate

E

Features

• Low Input Capacitance

• Low On-Resistance

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59

• Case Material: Molded Plastic “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Drain

Source

uivalent Circuit

DMG3401LSN

30V P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

D

G

To

S

View

Ordering Information (Note 4)

Part Number Case Packaging

DMG3401LSN-7 SC59 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG3401LSN

Document number: DS35502 Rev. 4 - 2

G34

YM

www.diodes.com

G34 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

October 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

NEW PRODUCT

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Steady

State

Steady

State

V

DSS

V

GSS

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

(Note 5)
(Note 6) 1.2
(Note 5)
(Note 6) 105
(Note 6)

P

R
R

T

J, TSTG

I

D

I

D

I

DM

I

S

D

JA

θ

JC

0.8

159

36

-55 to +150 °C

DMG3401LSN

-30 V

±12 V

-3.0

-2.3

-3.7

-2.9

-30 A

-1.5 A

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Body Leakage

BV

DSS

I

GSS

DSS

-30 - - V

- - -1.0 µA

- -

±100

nA

VGS = 0V, ID = -250μA
V

=-30V, VGS = 0V

DS

VGS = ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5 -1.0 -1.3 V

- 41 50

- 47 60

- 60 85

|

- 12 - S

- -0.8 -1.0 V

mΩ

VDS = VGS, ID = -250μA

= -10V, ID = -4A

V

GS

V

= -4.5V, ID = -3.5A

GS

V

= -2.5V, ID = -2.5A

GS

VDS = -5V, ID = -4A
VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

Q
Q

t

D(on

t

D(off

s
d

t

t

f

- 1326 -

- 103 -

- 71 -

- 7.3 -

- 11.6 -

- 25.1 -

- 2 -

- 1.7 -

- 8 -

- 13 -

- 71 -

- 38 -

pF

V

DS

= -15V, V

Ω VDS = 0V, V

nC

nS

= -15V, ID = -4A

V

DD

V

= -15V, VGS = -10V,

DS

= 6Ω, RL = 3.75Ω

R

GEN

= 0V, f = 1.0MHz

GS

= 0V, f = 1.0MHz

GS

DMG3401LSN

Document number: DS35502 Rev. 4 - 2

2 of 6

www.diodes.com

October 2012

© Diodes Incorporated