Diodes DMG302PU User Manual

Download

Page 1

Product Summary

(BR)DSS

-25V

10Ω @ V 13Ω @ VGS = -2.7V -0.15A

DS(ON)

= -4.5V -0.17A

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• DC-DC Converters

• Power Management Functions

NEW PRODUCT

ESD HBM >6kV

Top View

Ordering Information (Note 4)

DMG302PU

25V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surfaced Mount Package

• ESD Protected Gate (>6kV Human Body Model)

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Top View

Pin Configuration

Gate Protect ion

Diode

Equivalent Circuit

Part Number Compliance Case Packaging

DMG302PU-7 Standard SOT23 3,000/Tape & Reel

DMG302PU-13 Standard SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

13P

DMG302PU

Document number: DS36227 Rev. 2 - 2

13P

www.diodes.com

13P = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

1 of 6

May 2014

Page 2

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -2.7V

Steady

State

Steady

State

= +25°C

= +70°C

= +25°C

= +70°C

Pulsed Drain Current TP ≤ 300µs, Duty Cycle = 2%) IDM

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

NEW PRODUCT

Thermal Resistance, Junction to Case

(Note 5)

(Note 6) 0.45

(Note 5)

(Note 6) 275

(Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

DSS

GSS

DSS

-25

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage (Note 7)

GS(th)

DS(ON)

-0.65 -0.96 -1.5 V

⎯

2.5 10

3 13

189

⎯ ⎯

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG302PU

Document number: DS36227 Rev. 2 - 2

⎯

iss

oss

⎯

rss

⎯

d(on)

⎯

d(off)

⎯

www.diodes.com

27.2

6.1

1.7

0.35

0.08

0.06

4.5

2.3

24.1

11.0

2 of 6

DSS

GSS

θJA

θJC

J, TSTG

-1 µA

-100 nA

⎯

-1.5 V

⎯

DMG302PU

-25 V

-8 V

-0.17

-0.14

-0.15

-0.12

-0.5 A

0.33

376

-55 to +150 °C

VGS = 0V, ID = -250µA

VDS = -20V, VGS = 0V

VGS = -8V, VDS = 0V

VDS = VGS, ID = -250µA

= -4.5V, ID = -0.2A

VGS = -2.7V, ID = -0.05A

= -5V, ID = -0.2A

VGS = 0V, IS = -0.2A

= -10V, VGS = 0V

f = 1.0MHz

= -5V, ID = -0.2A,

= -4.5V,

= -4.5V, VDD = -6V

= -0.2A, RG = 50Ω

°C/W

May 2014

Page 3

CUR

RENT

URRENT

OUR

ON-R

OUR

ON-R

OUR

RAIN-SOUR

CE O

T = 125CA°

T = 150CA°

-4.

-300m

T = 150CA°

T = 25CA°

DMG302PU

T = 85CA°

T = -55CA°

NEW PRODUCT

1.0

V = -4.5V

0.9

V = -8.0V

0.8

0.7

(A)

0.6

0.5

0.4

AIN

0.3

-I , D

0.2

0.1

0.0 012345

V = -2.5V

-V , DRAIN -SOURCE VOLTAGE (V)

V = -1.5V

V= -1.2V

V = -4.0V

V = -3.0V

V = -2.7V

V = -2.0V

Figure 1 Typical Output Characteristics

6.0

5.5

5.0

0.6

V = -5.0V

0.5

(A)

0.4

T = 85CA°

T = 25CA°

T = -55CA°

0.3

AIN

0.2

-I , D

0.1

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

V = -4.5V

4.5

ESISTANCE ( )

4.0

V = -2.7V

3.5

3.0

2.5

V = -4.5V

2.0

AIN-S

1.5

, D

1.0

0.5

DS(ON)

0 0.2 0.4 0.6 0.8 1

-I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.8

V = -8V

I = -500mA

1.6

ESISTANCE ( )

T = 125CA°

AIN-S

, D

DS(ON)

0 0.2 0.4 0.6 0.8 1

-I , DRAIN SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

4.5

E ( )

V=5V I= A

3.5

1.4

1.2

AIN-S

, D

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 5 On-Resistance Variation with Temperature

V = -4.5V

I = -300mA

ESIS

2.5

V= -8V

I= A

-500m

1.5

, D

0.5

DS(on)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

DMG302PU

Document number: DS36227 Rev. 2 - 2

3 of 6

www.diodes.com

May 2014

Page 4

GATE THRESH

OLTAG

OUR

CE CUR

RENT

UNC

TIO

N CAPACITAN

GAT

OUR

OLTAG

NEW PRODUCT

1.2

1.1

E (V)

-I = 1mAD

0.9

LD V

0.8

-I = 250µA

0.7

0.6

0.5

GS(TH)

0.4

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

100

)

E (p

f = 1MHz

iss

DMG302PU

0.8

(A)

0.6

0.4

-I , S

0.2

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

E (V)

T= 25CA°

V= -5V

I = -200mA

E V

oss

E-S

, J

0 5 10 15 20 25

-V , DRAIN-SOURCE VOLTAGE (V)

rss

Figure 9 Typical Junction Capacitance

-V ,

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.9

D = 0.02

0.01

D = 0.01

SIE A

D = 0.005

Single Pulse

r(t),

R (t) = r(t) * R

θθ

JA JA

R = 373°C/W

Duty Cycle, D = t1/ t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

DMG302PU

Document number: DS36227 Rev. 2 - 2

4 of 6

www.diodes.com

May 2014

Page 5

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

NEW PRODUCT

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMG302PU

Document number: DS36227 Rev. 2 - 2

5 of 6

www.diodes.com

Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

SOT23

0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9 X 0.8 Y 0.9 C E

2.0

1.35

DMG302PU

May 2014

Page 6

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG302PU

Document number: DS36227 Rev. 2 - 2

6 of 6

www.diodes.com

May 2014