Diodes DMG301NU User Manual

Product Summary

I

V

R

(BR)DSS

25V

4 @ V
5 @ VGS = 2.7V 0.23A

DS(ON)

= 4.5V 0.26A

GS

D

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

DMG301NU

25V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 ESD Protected Gate (>6kV Human Body Model)

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Solderable per MIL-STD-202, Method 208

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

e3

ESD HBM >6kV

Top View

D

G

Top View

Pin Configuration

G

S

Gate Protection

Diode

Equivalent Circuit

D

S

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMG301NU-7 Standard SOT23 3,000/Tape & Reel

DMG301NU-13 Standard SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG301NU

Document number: DS36226 Rev. 2 - 2

www.diodes.com

N5K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

February 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 2.7V

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Steady

State

Steady

State

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

(Note 5)

(Note 6) 0.4

(Note 5)

(Note 6) 296

(Note 6)

P

R

R

T

J, TSTG

JA

JC

I

D

I

D

I

DM

I

S

D

0.32

369

115

-55 to +150 °C

DMG301NU

25 V

8 V

0.26

0.21

0.23

0.18

1.5 A

0.5 A

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

25

 

 

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

g

FS

SD

0.7

 

 







1

0.76 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

C

R

Q

Q

Q

t

D(on)

t

D(off)

iss

oss

rss

gd

t

t

DMG301NU

Document number: DS36226 Rev. 2 - 2

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

g



gs



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r



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f

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www.diodes.com

27.9

6.1

2.0

26.4

0.36

0.06

0.04

2.9

1.8

6.6

2.3

V

V

1.0 µA

100 nA

1.1 V

4 

5 



V

V

V

V

V

S

V

VGS = 0V, IS = 0.29A



V













pF

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

V

nC

I







nS

V
I



= 0V, ID = 250µA

GS

= 20V, V

DS

GS =

= VGS, ID = 250µA

DS

= 4.5V, ID = 0.4A

GS

= 2.7V, ID = 0.2A

GS

= 5V, ID = 0.4A

DS

= 10V, VGS = 0V,

DS

= 4.5V, VDS = 5V,

GS

= 0.2A

D

= 4.5V, VDS = 6V

GS

= 0.5A, R

D

8V, V

GS

= 0V

DS

= 50

G

= 0V

February 2014

© Diodes Incorporated