Diodes DMG2307L User Manual

NEW PRODUCT

Product Summary

I

max

D

V

R

(BR)DSS

90mΩ @ V

-30V

134mΩ @ VGS = -4.5V -3.1A

max

DS(ON)

= -10V -3.8A

GS

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

 General Purpose Interfacing Switch
 Power Management Functions
 Load Switch for Portable Devices

DMG2307L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT-23
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.08 grams (approximate)

Ordering Information (Notes 4 & 5)

Part Number Compliance Case Packaging

DMG2307L-7 Standard SOT-23 3000Tape & Reel

DMG2307LQ-7 Automotive SOT-23 3000Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMG2307L

Document number: DS35414 Rev. 3 – 2

Shanghai A/T Site

www.diodes.com

G24 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

November 2013

© Diodes Incorporated

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 7) VGS = -10V

Continuous Drain Current (Note 7) VGS = -10V

Continuous Drain Current (Note 7) VGS = -4.5V

Steady

State

Steady

State

t ≦10sec

Steady

State

Pulsed Drain Current (Note 7)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Total Power Dissipation (Note 7) t ≦ 10sec
Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec
Operating and Storage Temperature Range

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

P

R

P

R

P

R

T

J, TSTG

θJA

θJA

θJA

DMG2307L

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

D

D

D

-55 to +150 °C

-30 V

±20 V

-2.5

-2.0

-3.8

-3.0

-4.6

-3.6

-3.1

-2.5

A

A

A

A

-20 A

0.76 W
159 °C/W

1.36 W

94 °C/W

1.9 W

65.8 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

t

t

Q
Q

D(on

t

D(off

t

s

d

f

-30
– –
– –

–

– V

-1.0 μA

±100 nA

-1.0 – -3.0 V
–
–
–
–

–
–
–
–
–
–
–
–
–
–
–
–

70 90

105 134

4.8 – S

-0.75 -1.0 V

371.3

51.3

45.9
17

4.0

8.2

0.9

1.2

4.8

7.3

22.4

13.4

–
–
–
–
–
–
–
–
–
–
–
–

VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = -250μA

= -10V, ID = -2.5A

V

mΩ

GS

V

= -4.5V, ID = -2.5A

GS

VDS = -10V, ID = -2.5A
VGS = 0V, IS = -1A

pF
pF
pF

Ω

= -15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V,f = 1.0MHz
nC
nC
nC

= -10V, VDS = -15V,

V

GS

I

= -3A

D

nC
ns
ns
ns
ns

= -15V, VGS = -10V,

V

DS

R

= 15Ω, RG = 6Ω,

L

= -1A

I

D

DMG2307L

Document number: DS35414 Rev. 3 – 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated