Diodes DMG2305UX User Manual

Product Summary

I

D

TA = +25°C

-5.0A

-3.6A

V

(BR)DSS

-20V

R

DS(ON) max

52m @V

100m @VGS = -2.5V

= -4.5V

GS

Package

SOT23

Description

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting
 Power Management Functions
 DC-DC Converters
 Motor Control

DMG2305UX

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D
 Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (approximate)

Drain

e3

Top View

Gate

Source

Internal Schematic

G

Top View

D

S

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMG2305UX-7 Standard SOT23 3000/Tape & Reel

DMG2305UX-13 Standard SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG2305UX

Document number: DS36196 Rev. 4 - 2

23X

YM

www.diodes.com

23X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

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July 2013

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

Steady

State
t<10s

DMG2305UX

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

Steady State
t<10s 64 °C/W

I

P

R

R

T

J, TSTG

I

I

DM

D

D

D

JA

JC

-20 V
±8 V

-4.2

-3.3

-5.0

-4.0

A

A

-10 A

1.4 W
90 °C/W

33 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20

 
 
 

V

VGS = 0V, ID = -250µA

-1.0 µA

±100 nA

VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

V

GS(th

R

DS(ON)

|Y

fs

-0.5 — -0.9 V
40 52



52 100
68 200

| 

9



VDS = VGS, ID = -250µA
V

= -4.5V, ID = -4.2A

m

GS

V

GS

V

GS

S

VDS = -5V, ID = -4A

= -2.5V, ID = -3.4A
= -1.8V, ID = -2A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance



C

iss



C

oss



C

rss

R

G



808

85
77

15.2







pF
pF
pF



V

= -15V, VGS = 0V

DS

f = 1.0MHz
VGS = 0V, V

DS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing

Q

Q

s

Q

d

t

D(on

t



t

D(off

t



f









10.2

1.3

2.2

10.8

13.7

79.3

34.7









nC
nC
nC
ns
ns
ns
ns

V

= -4.5V, V

GS

= -3.5A

I

D

= -4V, V

V

DS

R

= 6, ID = -1A

G

DS

= -4.5V,

GS

= -4V,

DMG2305UX

Document number: DS36196 Rev. 4 - 2

2 of 5

www.diodes.com

July 2013

© Diodes Incorporated