Diodes DMG2301U User Manual

Product Summary

I

D

TA = +25°C

-2.7A

-2.1A

V

(BR)DSS

-20V

R

80mΩ @ V

110mΩ @ VGS = 2.5V

DS(ON)

max

= 4.5V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

 Backlighting
 Power Management Functions
 DC-DC Converters

NEW PRODUCT

 Motor control

SOT23

Top View Internal Schematic

max

Gate

DMG2301U

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (approximate)

Drain

D

S

Source

G

Top View

Pin Configuration

Ordering Information (Note 4)

Part Number Case Packaging

DMG2301U-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

G21

Shanghai A/T Site

YM

G21 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

DMG2301U

Document number: DS31848 Rev. 3 - 2

1 of 6

www.diodes.com

September 2013

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -2.5V

Steady

State

Steady

State

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

NEW PRODUCT

P

T

J, TSTG

V
V

θJA

D

DSS

GSS

I

I

I

DM

DMG2301U

D

D

-20 V
±8 V

-2.7

-2.1

-2.1

-1.7

A

A

-27 A

0.8 W

157 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20

 
 
 

V

VGS = 0V, ID = -250A

-1.0

±100 nA

A

VDS = -16V, VGS = 0V
VGS = 8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

| 

fs



-0.45

 



10

-1.0 V
80

110



mΩ

S

-0.75 -1.0 V

VDS = VGS, ID = -250A

= -4.5V, ID = -2.8A

V

GS

V

= -2.5V, ID = -2.0A

GS

VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature..

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C
C
C

R

Q
Q
Q

t

D(on

t

D(off

iss

oss

rss

t

t

G

s

d

f

DMG2301U

Document number: DS31848 Rev. 3 - 2














2 of 6

www.diodes.com

608

82
72

44.9

6.5

0.9

1.5










pF
pF
pF

Ω

nC
nC
nC

V
f = 1.0MHz

VGS = 0V, V

V

12.5 40 ns

10.3 30 ns

46.5 140 ns

V
R

22.2 66 ns

= -6V, VGS = 0V

DS

= 0V, f = 1.0MHz

DS

= -4.5V, V

GS

= -10V, V

DS

= 10, RG = 1.0, ID = -1A

L

= -10V, ID = -3A

DS

= -4.5V,

GS

September 2013

© Diodes Incorporated