Diodes DMG1029SV User Manual
NEW PRODUCT
DMG1029SV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
I
max
Device
V
R
(BR)DSS
Q1 60V
Q2 -60V
max
DS(ON)
1.7 @ V
= 10V
GS
3 @ VGS = 4.5V
4 @ V
= -10V
GS
6 @ VGS = -4.5V
D
TA = +25°C
500mA
400mA
-360mA
-310mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Top View Bottom View
SOT563
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
D
G
1
Q
1
S
1
S
2
2
Q
2
D
G
2
1
e3
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMG1029SV-7 Standard SOT563 3000/Tape & Reel
DMG1029SVQ-7 Automotive SOT563 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
GA1
YM
GA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG1029SV
Document number: DS35421 Rev. 3 - 2
1 of 9
www.diodes.com
August 2013
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings N-CHANNEL – Q1 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Pulsed Drain Current (Note 7)
Steady
State
t<10s
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
V
DSS
V
GSS
I
D
I
D
I
DM
Maximum Ratings P-CHANNEL – Q2 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (Note 7)
Steady
State
t<10s
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
V
DSS
V
GSS
I
D
I
D
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
= +25°C
T
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
A
TA = +70°C
Steady state
t<10s 210
= +25°C
T
A
TA = +70°C
Steady state
t<10s 97
Operating and Storage Temperature Range
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMG1029SV
Document number: DS35421 Rev. 3 - 2
2 of 9
www.diodes.com
P
R
P
R
T
J, TSTG
DMG1029SV
60 V
±20 V
500
400
620
480
1000 mA
-60 V
±20 V
-360
-280
-410
-320
-650 mA
D
JA
D
JA
0.45
0.28
281
1
0.62
129
-55 to +150 °C
mA
mA
mA
mA
W
°C/W
W
°C/W
August 2013
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
DS(ON)
|Y
V
GS(th)
fs
SD
1.0 — 2.5 V
|
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C
C
C
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
gs
r
f
Electrical Characteristics P-CHANNEL – Q2 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-60
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
R
DS (ON)
|Y
V
SD
|
fs
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
C
C
C
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
g
gs
gd
r
f
DMG1029SV
Document number: DS35421 Rev. 3 - 2
3 of 9
www.diodes.com
= +25°C, unless otherwise specified.)
A
60 — — V
— —
— —
10 nA
±50 nA
VGS = 0V, ID = 250A
VDS =50V, VGS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250A
—
—
80
— —
—
—
—
—
—
—
—
—
—
—
— —
— —
-1 — -3.0 V
—
—
50
— —
—
—
—
—
—
—
—
—
—
—
1.3 1.7
1.5 3
— —
mS
1.4 V
30
4.2
2.9
0.3
0.2
0.08
3.9
3.4
15.7
9.9
= +25°C, unless otherwise specified.)
A
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
— V
-25 nA
±100 nA
2.7 4
3.2 6
— —
mS
-1.4 V
25
4.7
2.7
0.28
0.14
0.08
5.5
7.9
10.6
11.6
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
VDS = 10V, ID = 200mA
VGS = 0V, IS = 115mA
V
f = 1.0MHz
V
I
D
V
R
VGS = 0V, ID = -250A
VDS = -50V, VGS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = -250A
V
V
VDS = -25V, ID = -100mA
VGS = 0V, IS = -115mA
V
f = 1.0MHz
V
I
V
R
DMG1029SV
= 10V, ID = 500mA
GS
= 4.5V, ID = 200mA
GS
= 25V, VGS = 0V,
DS
= 4.5V, VDS = 10V,
GS
= 250mA
= 30V, VGS = 10V,
DD
= 25, ID = 200mA
G
= -10V, ID = -500mA
GS
= -4.5V, ID = -200mA
GS
= -25V, VGS = 0V,
DS
= -4.5V, VDS = -10V,
GS
= -500mA
D
= -30V, VGS = -10V,
DD
= 50, ID = -270mA
G
August 2013
© Diodes Incorporated
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