Diodes DMG1024UV User Manual
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 2KV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ESD PROTECTED TO 2kV
TOP VIEW
DMG1024UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish ۛ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.006 grams (approximate)
S
G
BOTTOM VIEW
D
2
S
2
TOP VIEW
G
1
1
D
1
2
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 3)
Steady
State
= 25°C
A
T
= 85°C
A
Pulsed Drain Current (Note 4)
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) R
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
V
DSS
V
GSS
I
D
I
DM
P
D
θJA
T
, T
J
STG
20 V
±6 V
1.38
0.89
A
3 A
530 mW
235 °C/W
-55 to +150 °C
DMG1024UV
Document number: DS31974 Rev. 5 - 2
1 of 6
www.diodes.com
April 2010
© Diodes Incorporated
)
g
g
g
r
R
CUR
RENT
R
N
C
URREN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NEW PRODUCT
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
1.5
V = 8.0V
GS
V = 4.5V
1.2
(A)
0.9
V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
GS
BV
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
Q
Q
Q
t
D(on)
t
D(off)
DSS
fs
SD
iss
oss
rss
t
t
f
20 - - V
- - 100 nA
- - ±1.0 μA
0.5 - 1.0 V
0.3 0.45
0.4 0.6
-
0.5 0.75
- 9
- 10
|
s
d
- 1.4 - S
0.7 1.2 V
- 60.67 -
- 9.68 -
- 5.37 -
- 736.6 -
- 93.6 -
- 116.6 -
5.1
-
7.4
-
26.7
-
12.3
-
- ns
- ns
- ns
- ns
1.5
V = 5V
1.2
DS
(A)
0.9
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 600mA
GS
= 2.5V, ID = 500mA
V
Ω
GS
= 1.8V, ID = 350mA
V
GS
= 1.7V, ID = 140mA
V
GS
= 1.5V, ID = 100mA
V
GS
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
pF
pF
pF
pC
pC
pC
= 16V, VGS = 0V,
V
DS
f = 1.0MHz
V
= 4.5V, VDS = 10V,
GS
= 250mA
I
D
= 10V, VGS = 4.5V,
V
DD
= 47Ω, RG = 10Ω,
R
L
I
= 200mA
D
DMG1024UV
0.6
AIN
D
I, D
V = 1.5V
GS
0.3
V = 1.2V
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Fig. 1 Typical Output Characteri st ics
0.6
AI
T = 150°C
D
I, D
0.3
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0 0.5 1 1.5 2 2.5 3
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
DMG1024UV
Document number: DS31974 Rev. 5 - 2
2 of 6
www.diodes.com
April 2010
© Diodes Incorporated
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