Diodes DMG1023UV User Manual
V
Features
• Dual P-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected Up To 3KV
• Lead Free By Design/RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED TO 3kV
SOT563
DMG1023U
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
S
G
Bottom View
D
2
G
S
2
Top View Top View
1
1
D
1
2
Ordering Information (Note 3)
Part Number Case Packaging
DMG1023UV-7 SOT563 3,000 / Tape & Reel
DMG1023UV-13 SOT563 10,000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PA1
YM
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG1023UV
Document number: DS31975 Rev. 6 - 2
1 of 6
www.diodes.com
March 2012
© Diodes Incorporated
V
)
g
g
g
r
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 4) VGS = -4.5V
Steady
State
= 25°C
A
= 85°C
T
A
Pulsed Drain Current (Note 5)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Operating and Storage Temperature Range
T
DMG1023U
V
DSS
V
GSS
I
D
I
DM
P
D
θJA
, T
J
STG
-20 V
±6 V
-1.03
-0.68
A
-3 A
530 mW
235 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
I
GSS
DSS
DSS
-20 - - V
- - -100 nA
- - ±2.0 μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
-0.5 - -1.0 V
0.5 0.75
0.7 1.05
-
1.0 1.5
- 20
- 25
|
- 0.9 - S
-0.8 -1.2 V
VDS = VGS, ID = -250μA
V
= -4.5V, ID = -430mA
GS
= -2.5V, ID = -300mA
V
Ω
GS
= -1.8V, ID = -150mA
V
GS
V
= -1.7V, ID = -100mA
GS
V
= -1.5V, ID = -100mA
GS
VDS = -10V, ID = -250mA
VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
C
C
C
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
s
d
f
- 59.76 -
- 12.07 -
- 6.36 -
- 622.4 -
- 100.3 -
- 132.2 -
-
-
28.4
-
20.7
-
5.1
8.1
pF
V
pF
pF
pC
pC
pC
- ns
- ns
- ns
- ns
DS
f = 1.0MHz
V
GS
I
= -250mA
D
V
DD
R
L
I
= -200mA
D
= -16V, VGS = 0V,
= -4.5V, VDS = -10V,
= -10V, VGS = -4.5V,
= 47Ω, RG = 10Ω,
DMG1023UV
Document number: DS31975 Rev. 6 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
Loading...