Diodes DMG1016V User Manual

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Features

• Low On-Resistance

• Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• ESD Protected Gate to 2.5kV HBM

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2.5kV HBM

GS(th)

<1V

TOP VIEW

DMG1016

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 7

• Ordering Information: See Page 7

• Weight: 0.006 grams (approximate)

SOT-563

BOTTOM VIEW

TOP VIEW

Internal Schematic

Maximum Ratings N-CHANNEL – Q1 @T

Characteristic Symbol Value Unit

Drain Source Voltage Gate-Source Voltage

Drain Current (Note 1)

Maximum Ratings P-CHANNEL – Q2 @T

Characteristic Symbol Value Unit

Drain Source Voltage Gate-Source Voltage

Drain Current (Note 1)

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

DMG1016V

Document number: DS31767 Rev. 3 - 2

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 25°C unless otherwise specified

DSS

GSS

= 25°C

= 85°C

= 25°C unless otherwise specified

= 25°C

= 85°C

DSS

GSS

, T

STG

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20 V ±6

870 630

-20 V ±6

-640

-460

530 mW 235

-55 to +150

°C/W

°C

May 2009

)

Electrical Characteristics N-CHANNEL – Q

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 4)

DYNAMIC CHARACTERISTICS

Input Capacitance

NEW PRODUCT

Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

= 25°C unless otherwise specified

DSS

⎯ ⎯

DSS

⎯ ⎯

GSS

0.5

GS(th

⎯

DS (ON)

⎯

| ⎯

⎯

iss

⎯

oss

rss

d(on

⎯

d(off

⎯

60.67

9.68

5.37

736.6

93.6

116.6

26.7

12.3

⎯ ⎯

100 nA

± 1.0 μA

⎯

0.3

0.4

0.5

1.4

1.0 V

0.4

0.5

0.7 ⎯

0.7 1.2 V

⎯ ⎯ ⎯

⎯

5.1

7.4

⎯

V V V

VDS = VGS, ID = 250μA V

VDS =10V, ID = 400mA VGS = 0V, IS = 150mA

f = 1.0MHz

R I

DMG1016

= 0V, ID = 250μA

= 20V, VGS = 0V

= ±4.5V, VDS = 0V

= 4.5V, ID = 600mA

= 2.5V, ID = 500mA

= 1.8V, ID = 350mA

= 16V, VGS = 0V

= 4.5V, VDS = 10V,

= 250mA

= 10V, VGS = 4.5V,

= 47Ω, RG = 10Ω,

= 200mA

Electrical Characteristics P-CHANNEL – Q2 @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS

GSS

DSS

-20

⎯ ⎯

-100 nA

± 2.0 μA

= 0V, ID = -250μA

= -20V, VGS = 0V

VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 4)

GS(th

DS (ON)

|Y V

⎯

-0.5

⎯

0.5

0.7

1.0

-0.9

-1.0 V

0.7

0.9

1.3 ⎯

-0.8 -1.2 V

VDS = VGS, ID = -250μA V

= -4.5V, ID = -430mA

= -2.5V, ID = -300mA

= -1.8V, ID = -150mA

VDS =10V, ID = -250mA VGS = 0V, IS = -150mA

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Short duration pulse test used to minimize self-heating effect.

C C C

d(on

d(off

iss oss rss

s d

⎯

59.76

12.07

6.36

622.4

100.3

132.2

5.1

8.1

28.4

20.7

⎯ ⎯ ⎯

⎯

pF pF pF

= -16V, VGS = 0V

f = 1.0MHz

= -4.5V, VDS = -10V,

= -250mA

= -10V, VGS = -4.5V,

= 47Ω, RG = 10Ω,

= -200mA

DMG1016V

Document number: DS31767 Rev. 3 - 2

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May 2009

RAIN CUR

REN

CUR

RENT

RAIN-SOUR

CE O

N-R

TAN

N-CHANNEL – Q

(A)

I, D

NEW PRODUCT

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

1.0

V = 8.0V

V = 4.5V

0.8

V = 3.0V

0.6

0.4

V = 2.5V

V = 2.0V

V = 1.5V

0.2

V = 1.2V

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN - SOURC E VOLTAGE (V )

Fig. 1 Typica l O ut put Chara ct er i st ic

0.8

0.7

0.6

0.5

0.4

0.3

V = 1.8V

V = 2.5V

V = 4.5V

0.2

0.1

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.7

1.0

0.8

(A)

0.6

AIN

0.4

I, D

0.2

T = 150°C

T = 125°C

T = 25°C

T = -55°C

0 0.5 1 1.5 2

V , GATE-SOURCE VOLT AGE (V)

Fig. 2 Typical Transfer Characteristic

0.5

E ( )

T = 150°C

0.4

ESIS

T = 125°C

T = 85°C

0.3

T = 25°C

0.2

0.1

, D

DS(ON)

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN CURRENT (A)

T = -55°C

Fig. 4 Typical On-Resistance

vs. Drain C urrent and Temper ature

0.8

DMG1016

T = 85°C

1.5

0.6

1.3

1.1

V = 4.5V

I = 500mA

0.9

DSON

R , DRAIN-SOURCE

0.7

ON-RESISTANCE (NORMALIZED)

0.5

V = 2.5V

I = 250mA

-50 -25 0 T , AMBIENT TEMPERATURE (°C)

25 50 75 100 125 150

Fig. 5 On-Resistance Variation with T emperature

DMG1016V

Document number: DS31767 Rev. 3 - 2

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V = 2.5V

0.4

DSON

ON-RESISTANCE ( )

R , DRAIN-SOURCE

0.2

-50 -25 0 25 50 75 100 125 150 Fig. 6 On- R esistan ce Variation w it h Temperature

I = 250mA

V = 4.5V

I = 500mA

T , AMBIENT TEMPERATURE (°C)

May 2009

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