NEW PRODUCT
Product Summary
Device
V
Q1
Q2
R
(BR)DSS
20V
0.45Ω @ V
0.75Ω @ V
I
DS(ON)
= 4.5V
GS
= -4.5V
GS
= +25°C
D TA
1066mA
-845mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Power Supply Converter Circuits
ESD PROTECTED
Ordering Information (Note 4)
DMG1016UDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Up to 2.5kV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
e3
D
G
S
2
2
Q
2
D
G
2
1
Top View
1
Q
1
S
1
Top View
Internal Schematic
Part Number Compliance Case Packaging
DMG1016UDW-7 Standard SOT363 3000/Tape & Reel
DMG1016UDWQ-7 Automotive SOT363 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
CA1
YM
CA1
www.diodes.com
CA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
YM
M = Month (ex: 9 = September)
1 of 9
January 2014
© Diodes Incorporated
NEW PRODUCT
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Maximum Ratings N-CHANNEL – Q1 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
T
= +25°C
A
T
= +85°C
A
Maximum Ratings P-CHANNEL – Q2 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
= +25°C
T
A
= +85°C
T
A
Electrical Characteristics N-CHANNEL – Q1 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th)
R
DS(ON)
|Y
V
SD
|
fs
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
6. Short duration pulse test used to minimize self-heating effect.
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
2 of 9
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P
D
R
JA
θ
T
J, TSTG
V
DSS
V
GSS
I
D
V
DSS
V
GSS
I
D
= +25°C, unless otherwise specified.)
A
20
— —
— —
—
— V
100 nA
±1.0 μA
330 mW
379 °C/W
-55 to +150 °C
20 V
±6 V
1066
690
-20 V
±6 V
-845
-548
0.5 — 1.0 V
—
0.3 0.45
0.4 0.6
Ω
0.5 0.75
—
—
—
—
—
—
—
—
—
—
—
—
1.4 — S
0.7 1.2 V
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
DMG1016UDW
mA
mA
VGS = 0V, ID = 250μA
VDS =20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 600mA
GS
V
= 2.5V, ID = 500mA
GS
V
= 1.8V, ID = 350mA
GS
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
VDS = 10V, VGS = 0V,
f = 1.0MHz
= 4.5V, VDS = 10V,
V
GS
= 250mA
I
D
= 10V, VGS = 4.5V,
V
DD
= 47Ω, RG = 10Ω,
R
L
January 2014
© Diodes Incorporated
R
A
CURRENT
A
R
A
CUR
R
A
R
R
A
SOURCE
RESIS
T
A
C
E
NEW PRODUCT
DMG1016UDW
N-CHANNEL – Q1
1.0
0.8
)
V = 8.0V
GS
V = 4.5V
GS
(
V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
V = 1.5V
GS
IN
D
I, D
0.6
0.4
0.2
V = 1.2V
GS
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
0.8
Ω
0.7
0.6
0.5
0.4
0.3
0.2
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0.1
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.0
0.8
)
ENT (
0.6
IN
0.4
D
I, D
0.2
0
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
0 0.5 1 1.5 2
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
0.5
Ω
()
N
0.4
T = 150°C
A
T = 125°C
A
T = 85°C
0.3
ON-
0.2
T = 25°C
T = -55°C
IN-
0.1
, D
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = 85°C
A
A
A
A
1.7
0.8
1.5
0.6
1.3
1.1
V = 4.5V
GS
I = 500mA
D
0.9
DSON
R , DRAIN-SOURCE
0.7
ON-RESISTANCE (NORMALIZED)
0.5
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
V = 2.5V
GS
I = 250mA
D
-50 -25 0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
25 50 75 100 125 150
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Ω
V = 2.5V
GS
0.4
DSON
ON-RESISTANCE ( )
R , DRAIN-SOURCE
0.2
0
-50 -25 0 25 50 75 100 125 150
Fig. 6 On-Resistance Variation with Temperature
I = 250mA
D
V = 4.5V
GS
I = 500mA
D
T , AMBIENT TEMPERATURE (°C)
A
January 2014
© Diodes Incorporated
OUR
CE CUR
R
A
C, CAPACIT
A
C
E
F
E
AKA
E CURRENT
A
T
R
A
N
SIE
N
T THE
R
M
A
R
E
SIS
T
A
N
C
E
NEW PRODUCT
DMG1016UDW
N-CHANNEL – Q1 (cont.)
1.6
1.2
0.8
I = 1mA
D
I = 250µA
D
0.4
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambi ent Temperature
A
100
C
iss
)
(p
N
10
C
oss
C
rss
1.0
0.8
)
T = 25°C
A
ENT (
0.6
0.4
S
I, S
0.2
0
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
1,000
T = 150°C
A
)
(n
100
T = 125°C
A
G
T = 85°C
10
A
DSS
I, L
1
020
51510
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Total Capacitance
1
04 8121620
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
D = 0.7
D = 0.5
D = 0.3
0.1
L
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
t , PULSE DURATION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 260°C/W
JA
P(pk)
t
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
Fig. 11 Transient Thermal Response
T = 25°C
A
R
θθJA
1
t
2
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
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January 2014
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics P-CHANNEL – Q2 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
BV
V
R
DSS
DSS
I
GSS
GS(th)
DS (ON)
|Y
|
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
= +25°C, unless otherwise specified.)
A
-20
— —
— —
-0.5 — -1.0 V
—
—
—
—
—
—
—
—
—
—
—
—
—
— —
V
-100 nA
±2.0 μA
0.5 0.75
0.7 1.05
Ω
1.0 1.5
0.9 — S
-0.8 -1.2 V
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.72
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
DMG1016UDW
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = -250μA
V
= -4.5V, ID = -430mA
GS
V
= -2.5V, ID = -300mA
GS
V
= -1.8V, ID = -150mA
GS
VDS = -10V, ID = -250mA
VGS = 0V, IS = -150mA
VDS = -16V, VGS = 0V,
f = 1.0MHz
= -4.5V, VDS = -10V,
V
GS
= -250mA
I
D
= -10V, VGS = -4.5V,
V
DS
= 10Ω, RL = 47Ω
R
G
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
5 of 9
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January 2014
© Diodes Incorporated
R
CUR
R
T
R
RAIN-SOUR
CE O
N-R
TAN
C
R
RAIN-SOUR
CE O
N-R
TAN
C
NEW PRODUCT
DMG1016UDW
P-CHANNEL – Q2
1.0
V = -8.0V
GS
V = -4.5V
GS
0.8
V = -3.0V
0.6
GS
V = -2.5V
GS
V = -2.0V
GS
0.4
D
-I , DRAIN CURRENT (A)
0.2
0
V = -1.5V
GS
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 12 Typical Output Characteristic
1.6
Ω
E ( )
1.4
1.2
V = -1.8V
ESIS
1.0
GS
0.8
V = -2.5V
0.6
0.4
, D
0.2
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 14 Typical On-Resistance
GS
V = -4.5V
GS
vs. Drain Current and Gat e Voltage
1.7
1.0
V = -5V
DS
0.8
(A)
EN
0.6
AIN
0.4
D
-I , D
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
1.0
Ω
E ( )
T = 150°C
A
T = 125°C
A
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 13 Typical Transfer Characteristic
V = -4.5V
GS
0.8
ESIS
0.6
0.4
0.2
, D
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
-I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
1.0
Ω
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1.5
1.3
0.8
V = -2.5V
GS
I = -250mA
D
0.6
1.1
V = -4.5V
GS
I = -500mA
D
0.9
DSON
R , DRAIN-SOURCE
V = -2.5V
ON-RESISTANCE (NORMALIZED)
0.7
0.5
GS
I = -250mA
D
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 16 On-Resistance Variation with Temperature
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
6 of 9
www.diodes.com
0.4
0.2
DSON
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
Fig. 17 On-Resistance Variation with Temperature
V = -4.5V
GS
I = -500mA
D
T , AMBIENT TEMPERATURE (°C)
A
January 2014
© Diodes Incorporated
SOURC
E CURRE
N
T
A
C, CAPACITAN
C
F
GE CUR
REN
T
T
R
T T
H
R
R
TANC
NEW PRODUCT
DMG1016UDW
P-CHANNEL – Q2 (cont.)
1.6
1.2
I = -1mA
0.8
I = -250µA
D
D
0.4
GS(TH)
-V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
A
100
C
iss
1.0
0.8
)
(
T = 25°C
A
0.6
0.4
S
-I ,
0.2
0
0.2 0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 19 Diode Forward Voltage vs. Current
1,000
T = 150°C
A
)
(nA)
T = 125°C
100
A
E (p
C
10
1
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 20 Typical Total Capacitance
1
E
D = 0.7
D = 0.5
D = 0.3
oss
C
rss
10
DSS
-I , LEAKA
T = 85°C
A
T = 25°C
A
1
04 8121620
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
ESIS
0.1
D = 0.1
MAL
E
ANSIEN
r(t),
0.01
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 260°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.00001 0.001 0.01 0.1 1 10 100 1,000
0.0001
t , PULSE DURATION TIME (s)
1
Fig. 22 Transient Thermal Response
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
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January 2014
© Diodes Incorporated
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
K
J
H
B C
M
D
L
F
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
G
Z
Y
C2
X
C2
C1
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
SOT363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
0° 8°
α
All Dimensions in mm
DMG1016UDW
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
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January 2014
© Diodes Incorporated
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMG1016UDW
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
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