Diodes DMG1016UDW User Manual
NEW PRODUCT
Product Summary
Device
V
Q1
Q2
R
(BR)DSS
20V
0.45Ω @ V
0.75Ω @ V
I
DS(ON)
= 4.5V
GS
= -4.5V
GS
= +25°C
D TA
1066mA
-845mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Power Supply Converter Circuits
ESD PROTECTED
Ordering Information (Note 4)
DMG1016UDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Up to 2.5kV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
e3
D
G
S
2
2
Q
2
D
G
2
1
Top View
1
Q
1
S
1
Top View
Internal Schematic
Part Number Compliance Case Packaging
DMG1016UDW-7 Standard SOT363 3000/Tape & Reel
DMG1016UDWQ-7 Automotive SOT363 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
CA1
YM
CA1
www.diodes.com
CA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
YM
M = Month (ex: 9 = September)
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January 2014
© Diodes Incorporated
NEW PRODUCT
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Maximum Ratings N-CHANNEL – Q1 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
T
= +25°C
A
T
= +85°C
A
Maximum Ratings P-CHANNEL – Q2 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
= +25°C
T
A
= +85°C
T
A
Electrical Characteristics N-CHANNEL – Q1 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th)
R
DS(ON)
|Y
V
SD
|
fs
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
6. Short duration pulse test used to minimize self-heating effect.
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
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P
D
R
JA
θ
T
J, TSTG
V
DSS
V
GSS
I
D
V
DSS
V
GSS
I
D
= +25°C, unless otherwise specified.)
A
20
— —
— —
—
— V
100 nA
±1.0 μA
330 mW
379 °C/W
-55 to +150 °C
20 V
±6 V
1066
690
-20 V
±6 V
-845
-548
0.5 — 1.0 V
—
0.3 0.45
0.4 0.6
Ω
0.5 0.75
—
—
—
—
—
—
—
—
—
—
—
—
1.4 — S
0.7 1.2 V
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
DMG1016UDW
mA
mA
VGS = 0V, ID = 250μA
VDS =20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 600mA
GS
V
= 2.5V, ID = 500mA
GS
V
= 1.8V, ID = 350mA
GS
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
VDS = 10V, VGS = 0V,
f = 1.0MHz
= 4.5V, VDS = 10V,
V
GS
= 250mA
I
D
= 10V, VGS = 4.5V,
V
DD
= 47Ω, RG = 10Ω,
R
L
January 2014
© Diodes Incorporated
R
A
CURRENT
A
R
A
CUR
R
A
R
R
A
SOURCE
RESIS
T
A
C
E
NEW PRODUCT
DMG1016UDW
N-CHANNEL – Q1
1.0
0.8
)
V = 8.0V
GS
V = 4.5V
GS
(
V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
V = 1.5V
GS
IN
D
I, D
0.6
0.4
0.2
V = 1.2V
GS
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
0.8
Ω
0.7
0.6
0.5
0.4
0.3
0.2
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0.1
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.0
0.8
)
ENT (
0.6
IN
0.4
D
I, D
0.2
0
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
0 0.5 1 1.5 2
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
0.5
Ω
()
N
0.4
T = 150°C
A
T = 125°C
A
T = 85°C
0.3
ON-
0.2
T = 25°C
T = -55°C
IN-
0.1
, D
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = 85°C
A
A
A
A
1.7
0.8
1.5
0.6
1.3
1.1
V = 4.5V
GS
I = 500mA
D
0.9
DSON
R , DRAIN-SOURCE
0.7
ON-RESISTANCE (NORMALIZED)
0.5
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
V = 2.5V
GS
I = 250mA
D
-50 -25 0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
25 50 75 100 125 150
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Ω
V = 2.5V
GS
0.4
DSON
ON-RESISTANCE ( )
R , DRAIN-SOURCE
0.2
0
-50 -25 0 25 50 75 100 125 150
Fig. 6 On-Resistance Variation with Temperature
I = 250mA
D
V = 4.5V
GS
I = 500mA
D
T , AMBIENT TEMPERATURE (°C)
A
January 2014
© Diodes Incorporated
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