Diodes DMG1013UW User Manual

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Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

ESD PROTECTED

Top View

DMG1013UW

P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT-323
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

Drai

D

Gate

Gate
Protection
Diode

Equivalent Circuit Top View

Source

GS

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMG1013UW-7 SOT-323 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

PA1

Shanghai A/T Site

DMG1013UW

Document number: DS31861 Rev. 3 - 2

PA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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)

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 5)

Steady

State

T

A

= +85°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

DMG1013UW

V

DSS

V

GSS

I

D

I

DM

P

D

θJA

T

, T

J

STG

-20 V

±6 V

-0.82

-0.54

A

-6 A

0.31 W
398 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - -100 nA

- - ±2.0 μA

VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V

VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

-0.5 - -1.0 V

0.5

-

0.7

1.0

|

- 0.9 - S

-0.8 -1.2 V

0.75

1.05

1.5

VDS = VGS, ID = -250μA

V

= -4.5V, ID = -430mA

Ω

GS

VGS = -2.5V, ID = -300mA

VGS = -1.8V, ID = -150mA

VDS = -10V, ID = -250mA

VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

C

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s

d

f

- 59.76 -

- 12.07 -

- 6.36 -

- 622.4 -

- 100.3 -

- 132.2 -

-

-

28.4

-

20.7

-

5.1

8.1

pF

V

pF
pF
pC
pC
pC

- ns

- ns

- ns

- ns

DS

f = 1.0MHz

V

GS

I

= -250mA

D

V

DD

R

L

= -200mA

I

D

= -16V, VGS = 0V,

= -4.5V, VDS = -10V,

= -10V, VGS = -4.5V,

= 47Ω, RG = 10Ω,

DMG1013UW

Document number: DS31861 Rev. 3 - 2

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