Diodes DMG1013T User Manual

p

Product Summary

V

(BR)DSS

-20V

R

700mΩ @ V
900mΩ @ VGS = -2.5V

1300m @ VGS = -1.8V

DS(on)

= -4.5V

GS

TA = 25°C

-460mA

-420mA

-350mA

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Load switch

NEW PRODUCT

• Power management functions

ESD PROTECTED TO 3kV

) and yet maintain superior switching

DS(on)

SOT523

Top View

DMG1013T

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

D

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drain

D

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

G

To

S

View

Ordering Information (Note 3)

Part Number Case Packaging

DMG1013T-7 SOT523 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2015 2015

Code W X Y Z A B C C C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PA1

YM

DMG1013T

Document number: DS31784 Rev. 5 - 2

PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

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θ

)

g

g

g

r

DMG1013T

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 4) Steady
State

T

= 25°C

A

= 85°C

T

A

Pulsed Drain Current (Note 5)

V

DSS

V

GSS

I

D

I

DM

-20 V
±6 V

-0.46

-0.33

A

-6 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range

P

R

T

J, TSTG

D
JA

0.27 W
461 °C/W

-55 to +150 °C

NEW PRODUCT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - -100 nA

- - ±2.0

VGS = 0V, ID = -250A
VDS = -20V, VGS = 0V

μA

= ±4.5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5 - -1.0 V

0.5 0.7

0.7 0.9

-

1.0 1.3

|

- 0.9 - S

-0.8 -1.2 V

VDS = VGS, ID = -250A
V

= -4.5V, ID = -350mA

Ω

GS

V

= -2.5V, ID = -300mA

GS

V

= -1.8V, ID = -150mA

GS

VDS = -10V, ID = -250mA

VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in

steady-state condition.

5. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.

6. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%

7. For design aid only, not subject to production testing.

C

iss

C

oss

C

rss

Q

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

- 59.76 -

- 12.07 -

- 6.36 -

- 580 -

- 104 -

- 125 -

5.1

-

8.1

-

28.4

-

20.7

-

pF

V

pF
pF
pC
pC
pC

- ns

- ns

- ns

- ns

DS

f = 1.0MHz

V

GS

= -250mA

I

D

V

DD

R

L

= -200mA

I

D

= -16V, VGS = 0V,

= -4.5V, VDS = -10V,

= -10V, VGS = -4.5V,

= 47, RG = 10,

DMG1013T

Document number: DS31784 Rev. 5 - 2

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RAIN CUR

REN

T

RAIN CUR

REN

T

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN-SOUR

CE O

N-R

TAN

C

7

R

R

OUR

C

NEW PRODUCT

DMG1013T

1.5

V = -8.0V

GS

1.2

V = -4.5V

(A)

0.9

GS

V = -3.0V

GS

V = -2.5V

GS

V = -2.0V

GS

0.6

D

-I , D

0.3

V = -1.5V

V = -1.2V

GS

0

012345

-V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

1.6

Ω

E ( )

1.4

10

V = -5V

DS

8

(A)

6

4

D

-I , D
2

0

T = 150°C

A

T = 125°C

A

T = 85°C

T = 25°C

A

T = -55°C

A

A

0 0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

1.0

Ω

E ( )

V = -4.5V

GS

0.8

ESIS

, D

1.2

1.0

0.8

0.6

0.4

V = -1.8V

GS

V = -2.5V

GS

V = -4.5V

GS

ESIS

0.6

0.4

0.2

, D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.2

DS(ON)

0

0 0.3 0.6 0.9 1.2 1.5

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.

DS(ON)

0

0 0.3 0.6 0.9 1.2 1.5

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.2

1.5

E

1.3

1.1

AIN-S

V = -2.5V

GS

I = -500mA

D

V = -4.5V

GS

I = -1.0A

D

1.0

Ω

0.8

V = -2.5V

GS

I = -500mA

D

0.6

, D

A

V = -4.5V

GS

I = -1.0A

D

0.9

DSON

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

0.4

DSON

ON-RESISTANCE ( )

R , DRAIN-SOURCE

0.2

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

DMG1013T

Document number: DS31784 Rev. 5 - 2

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GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

C, CAPACITAN

C

F

GAT

OUR

C

OLTAG

T

R

T T

H

R

R

TANC

NEW PRODUCT

DMG1013T

1.6

10

E (V)

1.2

LD V

I = -1mA

0.8

I = -250µA

D

D

0.4

GS(TH)

(A)

-I , S

8

6

T = 25°C

A

4

S

2

-V ,
0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

100

C

iss

f = 1MHz

)

E (p

0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

6

5

E (V)

4

10

C

oss

C

rss

1

0 5 10 15 20

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical T otal Capacitance

E V

3

E-S

2

GS

1

-V ,

0

0 0.2 0.4 0.6 0.8 1.0

Q , TOT AL GATE CHARGE (nC)

g

Fig. 10 Gate-Charge Characteristics

1

E

D = 0.7

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.001 0.01 0.1 1 10 100 1,000

0.0001
t , PULSE DURATION TIME (s)

1

D = 0.9

R (t) = r(t) *

θ

JA

R = 504°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 11 Transient Thermal Response

DMG1013T

Document number: DS31784 Rev. 5 - 2

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Package Outline Dimensions

NEW PRODUCT

K

J

Suggested Pad Layout

Z

DMG1013T

A

Dim Min Max Typ

A 0.15 0.30 0.22

C

B

G
H

N

D

Y

L

X

M

C

E

B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50

α

Dimensions Value (in mm)

SOT523

⎯ ⎯

0° 8°

All Dimensions in mm

Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7

0.50

⎯

DMG1013T

Document number: DS31784 Rev. 5 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG1013T

DMG1013T

Document number: DS31784 Rev. 5 - 2

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