Diodes DMG1013T User Manual

p

Product Summary

V

(BR)DSS

-20V

R

700mΩ @ V
900mΩ @ VGS = -2.5V

1300m @ VGS = -1.8V

DS(on)

= -4.5V

GS

TA = 25°C

-460mA

-420mA

-350mA

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Load switch

NEW PRODUCT

• Power management functions

ESD PROTECTED TO 3kV

) and yet maintain superior switching

DS(on)

SOT523

Top View

DMG1013T

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

D

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drain

D

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

G

To

S

View

Ordering Information (Note 3)

Part Number Case Packaging

DMG1013T-7 SOT523 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2015 2015

Code W X Y Z A B C C C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PA1

YM

DMG1013T

Document number: DS31784 Rev. 5 - 2

PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

March 2012

© Diodes Incorporated

θ

)

g

g

g

r

DMG1013T

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 4) Steady
State

T

= 25°C

A

= 85°C

T

A

Pulsed Drain Current (Note 5)

V

DSS

V

GSS

I

D

I

DM

-20 V
±6 V

-0.46

-0.33

A

-6 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range

P

R

T

J, TSTG

D
JA

0.27 W
461 °C/W

-55 to +150 °C

NEW PRODUCT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - -100 nA

- - ±2.0

VGS = 0V, ID = -250A
VDS = -20V, VGS = 0V

μA

= ±4.5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5 - -1.0 V

0.5 0.7

0.7 0.9

-

1.0 1.3

|

- 0.9 - S

-0.8 -1.2 V

VDS = VGS, ID = -250A
V

= -4.5V, ID = -350mA

Ω

GS

V

= -2.5V, ID = -300mA

GS

V

= -1.8V, ID = -150mA

GS

VDS = -10V, ID = -250mA

VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in

steady-state condition.

5. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.

6. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%

7. For design aid only, not subject to production testing.

C

iss

C

oss

C

rss

Q

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

- 59.76 -

- 12.07 -

- 6.36 -

- 580 -

- 104 -

- 125 -

5.1

-

8.1

-

28.4

-

20.7

-

pF

V

pF
pF
pC
pC
pC

- ns

- ns

- ns

- ns

DS

f = 1.0MHz

V

GS

= -250mA

I

D

V

DD

R

L

= -200mA

I

D

= -16V, VGS = 0V,

= -4.5V, VDS = -10V,

= -10V, VGS = -4.5V,

= 47, RG = 10,

DMG1013T

Document number: DS31784 Rev. 5 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated