![](/html/26/26be/26be1466663d30985f5b35be220fe05b3bc51c269d5bcc9f53fc62b896eba68d/bg1.png)
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
NA1 = Product Type Marking Code
Chengdu A/T Site
Shanghai A/T Site
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2KV
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
N-CHANNEL ENHANCEMENT MO DE M O SFET
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
TOP VIEW
Ordering Information (Note 4)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y o r Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Document number: DS31859 Rev. 3 - 2
www.diodes.com
September 2013
© Diodes Incorporated