Diodes DMG1012T User Manual

p

DMG1012T

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

SOT523

Top View

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drain

D

Gate

Protection

Diode

Equivalent Circuit

Source

G

To

S

View

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG1012T-7 Commercial SOT523 3000/Tape & Reel

DMG1012TQ-7 Automotive SOT523 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NA1

YM

NA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)

DMG1012T

Document number: DS31783 Rev. 3 - 2

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January 2012

θ

)

g

r

Maximum Ratings @T

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 4) Pulsed Drain Current

Thermal Characteristics @T

NEW PRODUCT

Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

Characteristic Symbol Value Units

= 25°C unless otherwise specified

A

T

Steady

State

= 25°C unless otherwise specified

A

= 25°C

A

= 85°C

T

A

T

V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

J, TSTG

DMG1012T

20 V ±6 V

0.63

0.45

A

6 A

0.28 W 452 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 100 nA

- - ±1.0

VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V

μA

VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

|Y V

fs

SD

0.5 - 1.0 V

0.3 0.4

-

0.4 0.5

0.5 0.7

|

- 1.4 - S

0.7 1.2 V

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 600mA

Ω

GS

= 2.5V, ID = 500mA

V

GS

= 1.8V, ID = 350mA

V

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time

C C C

Q Q Q

t

D(on)

Turn-On Rise Time Turn-Off Delay Time

t

D(off)

Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB.

5. Short duration pulse test used to minimize self-heating effect.

iss

oss

rss

t

s d

f

- 60.67 -

- 9.68 -

- 5.37 -

- 736.6 -

- 93.6 -

- 116.6 -

-

26.7

-

12.3

-

5.1

7.4

pF

V

pF pF pC pC pC

- ns

DS

f = 1.0MHz

V

GS

= 250mA

I

D

V

DD

R

L

I

= 200mA

D

=16V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

= 47Ω, RG = 10Ω,

DMG1012T

Document number: DS31783 Rev. 3 - 2

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January 2012

R

CUR

RENT

RAIN CUR

R

N

T

R

RAIN-SOUR

CE O

N-R

TAN

C

NEW PRODUCT

DMG1012T

1.5

V = 8.0V

GS

V = 4.5V

V = 3.0V

GS

V = 2.5V

GS

V = 2.0V

GS

V = 1.5V

GS

(A)

AIN

D

I, D

1.2

0.9

0.6

0.3

V = 1.2V

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typica l O ut put Chara ct er istics

0.8

Ω

0.7

0.6

0.5

V = 1.8V

GS

0.4

V = 2.5V

0.3

0.2

GS

V = 4.5V

GS

0.1

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 0.3 0.6 0.9 1.2 1.5

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent and G ate V oltage

1.7

1.5

V = 5V

1.2

DS

(A)

0.9

E

0.6

T = 150°C

D

I, D

0.3

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.6

Ω

E ( )

V = 4.5V

0.5

ESIS

0.4

GS

T = 150°C

A

T = 125°C

A

T = 85°C

A

0.3

T = 25°C

A

, D

0.2

0.1

DS(ON)

0

T = -55°C

A

0 0.3 0.6 0.9 1.2 1.5

I , DRAIN CURRENT (A)

D

Fig. 4 Typical D r ai n- Source On - Resistance

vs. Drain Cu r re nt and Temperatur e

0.8

Ω

1.5

0.6

1.3

1.1

0.9

DS(ON)

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On- Resistance Variation with Temperature

V = 2.5V

GS

I = 500mA

D

V = 4.5V

GS

I = 1.0A

D

V = 2.5V

0.4

0.2

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

GS

I = 500mA

D

V = 4.5V

GS

I = 1.0A

D

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

DMG1012T

Document number: DS31783 Rev. 3 - 2

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January 2012

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

C, CAPACITANC

F

R

OUR

C

GE CUR

RENT

T

R

T

HER

R

TANC

NEW PRODUCT

DMG1012T

1.6

10

E (V)

1.2

LD V

0.8

I = 250µA

D

8

(A)

6

T = 25°C

A

4

0.4

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient T emperature

100

S

I, S

2

0

0.2 0.4 0.6 0.8 1.0 1.2 V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forwa r d Voltag e vs. Curre nt

1,000

(nA)

C

iss

T = 150°C

A

) E (p

10

C

oss

100

T = 125°C

A

E LEAKA

C

rss

10

T = 85°C

A

T = 25°C

A

1

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Capacitance

AIN-S

DSS

1

I, D

04 8121620

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-S ource Voltage

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

0.01

ANSIEN

r(t),

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 486°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

1

Fig. 11 Transient Thermal Response

DMG1012T

Document number: DS31783 Rev. 3 - 2

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January 2012

Package Outline Dimensions

NEW PRODUCT

K

J

Suggested Pad Layout

Z

DMG1012T

A

Dim Min Max Typ

A 0.15 0.30 0.22

C

B

G

H

N

D

Y

L

X

M

C

E

B 0.75 0.85 0.80 C 1.45 1.75 1.60 D G 0.90 1.10 1.00 H 1.50 1.70 1.60

K 0.60 0.80 0.75

M 0.10 0.20 0.12 N 0.45 0.65 0.50

Dimensions Value (in mm)

SOT523

⎯ ⎯

J 0.00 0.10 0.05

L 0.10 0.30 0.22

0° 8°

α

All Dimensions in mm

Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7

0.50

⎯

DMG1012T

Document number: DS31783 Rev. 3 - 2

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January 2012

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG1012T

Document number: DS31783 Rev. 3 - 2

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January 2012