Diodes DMG1012T User Manual

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DMG1012T

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

SOT523

Top View

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drain

D

Gate

Gate

Protection

Diode

Equivalent Circuit

Source

G

To

S

View

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG1012T-7 Commercial SOT523 3000/Tape & Reel

DMG1012TQ-7 Automotive SOT523 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NA1

YM

NA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

DMG1012T

Document number: DS31783 Rev. 3 - 2

1 of 6

www.diodes.com

January 2012

© Diodes Incorporated

θ

)

g

g

g

r

Maximum Ratings @T

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4)
Pulsed Drain Current

Thermal Characteristics @T

NEW PRODUCT

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Characteristic Symbol Value Units

= 25°C unless otherwise specified

A

T

Steady

State

= 25°C unless otherwise specified

A

= 25°C

A

= 85°C

T

A

T

V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

J, TSTG

DMG1012T

20 V
±6 V

0.63

0.45

A

6 A

0.28 W
452 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 100 nA

- - ±1.0

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

μA

VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 1.0 V

0.3 0.4

-

0.4 0.5

0.5 0.7

|

- 1.4 - S

0.7 1.2 V

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 600mA

Ω

GS

= 2.5V, ID = 500mA

V

GS

= 1.8V, ID = 350mA

V

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time

C
C
C

Q
Q
Q

t

D(on)

Turn-On Rise Time
Turn-Off Delay Time

t

D(off)

Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB.

5. Short duration pulse test used to minimize self-heating effect.

iss

oss

rss

t

t

s
d

f

- 60.67 -

- 9.68 -

- 5.37 -

- 736.6 -

- 93.6 -

- 116.6 -

-

-

26.7

-

12.3

-

5.1

7.4

pF

V

pF
pF
pC
pC
pC

- ns

- ns

- ns

- ns

DS

f = 1.0MHz

V

GS

= 250mA

I

D

V

DD

R

L

I

= 200mA

D

=16V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

= 47Ω, RG = 10Ω,

DMG1012T

Document number: DS31783 Rev. 3 - 2

2 of 6

www.diodes.com

January 2012

© Diodes Incorporated