Diodes DMC6070LFDH User Manual

Page 1
Product Summary
Device
Q1 60V
Q2 -60V
V
(BR)DSS
R
85 m @ V
120 m @ VGS = 4.5V
150 m @ V
250 m @ VGS = -4.5V
DS(ON)
max
GS
GS
= 10V
= -10V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
Power Management Functions
Analog Switch
ADVANCED INFORMATION
V-DFN3030-8
D1
D1
D2
D2
Bottom View
S1
G1
S2
G2
I
max
D
TA = +25°C
3.1A
2.7A
-2.4A
-1.8A
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: V-DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.02 grams (approximate)
D1
G1
S1
N-Channel MOSFET
G2
P-Channel MOSFET
Equivalent Circuit
D2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMC6070LFDH-7 V-DFN3030-8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated.
DMC6070LFDH
Document number: DS36083 Rev. 6 - 2
C60 = Product Type Marking Code
YYWW
YYWW = Date Code Marking YY = Last Digit of Year (ex: 12 for 2012) WW = Week Code (01 ~ 53)
C60
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Page 2
T
R
T T
H
R
R
TANC
Maximum Ratings Q1 N-CHANNEL (@T
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Maximum Ratings Q2 P-CHANNEL (@T
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
ADVANCED INFORMATION
= +25°C, unless otherwise specified.)
A
= +25°C
Steady
State
t<10s
= +25°C, unless otherwise specified.)
A
Steady
State
t<10s
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
60 V
±20 V
3.1
2.5
3.9
3.1
A
A
2 A
15 A
-60 V
±20 V
-2.4
-1.9
-2.9
-2.3
A
A
-2 A
-12 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
t<10s 60 Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
P
R
R
T
J, TSTG
θJA
θJC
D
1.4 W 91
°C/W
32
-55 to +150 °C
1
D = 0.9 D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Sin gle Pu lse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R (t) = r(t) * R

JA JA
R = 116°C/W
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIME (sec)
Figure 1 Transient Thermal Resistance
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)
g
g
g
r
R
C
U
R
RENT
R
CUR
RENT
Electrical Characteristics N-CHANNEL – Q1 (@T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Qg Total Gate Charge (VGS = 4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time
ADVANCED INFORMATION
Turn-Off Delay Time Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing
10
8
(A)
6
Characteristic Symbol Min Typ Max Unit Test Condition
V= 10V
GS
V= 4.5V
GS
V= 4.0V
GS
V= 3.5V
GS
BV
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y V
C C C
R
Q
Q
t
D(on)
t
D(off)
DSS
fs
SD
iss
oss
rss
t
t
f
= +25°C, unless otherwise specified.)
A
|
s
d
60
 
1
 
           
1 μA
±100 nA
3 V 60 85 72 120
3.7
0.7 1.2 V
731
34 23
1.3
11.5
5.2
2.1
1.5
9.6 11 61 21
           
10
V = 5.0VDS
8
(A)
6
V
VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±16V, VDS = 0V
VDS = VGS, ID = 250μA V
= 10V, ID = 1.5A
m
pF pF pF
nC nC nC nC ns ns ns ns
GS
V
= 4.5V, ID = 0.5A
GS
S
VDS = 5V, ID = 1.5A VGS = 0V, IS = 3A
= 20V, VGS = 0V,
V
DS
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 30V, ID = 3A
DS
V
= 10V, VDS = 30V,
GS
R
= 50Ω, RL = 20V
G
AIN
4
D
I, D
2
V= 3.0V
V= 2.8V
GS
0
0123 45
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Figure 2 Typical Output Characteristic
4
AIN
D
I, D
2
0
0123 45
V , GATE-SOURCE VOLTAGE (V)
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Figure 3 Typical Transfer Characteristics
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R
R
OUR
ON-R
R
RAIN-SOUR
CE O
N
R
TAN
C
O
O
R
RAIN-SOUR
C
R, D
RAIN-SOUR
CE O
N
R
N
C
G
TE T
H
RESH
O
OLTAG
0.10
0.09
0.08
ESISTANCE ( )
V = 4.0VGS
0.07
CE
0.06
V = 10VGS
0.05
AIN-S
, D
0.04
DS(ON)
0.03 02 46 810
I , DRAIN-SOURCE CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.20
ADVANCED INFORMATION
0.15
V = 4.5VGS
N-RESISTANCE ( )
0.10
URCE
0.05
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.15
E ( )
0.12
ESIS
-
0.09
I= 1.5A
0.06
0.03
, D
DS(ON)
0
02468101214161820
Figure 5 Typical Drain-Source On-Resistance
1.8
1.6
E
1.4
1.2
, D
1.0
DS(ON)
ON-RESISTANCE (NORMALIZED)
0.8
D
I= 0.5A
D
V , GATE-SOURCE VOLTAGE (V)
GS
vs. Gate-Source Voltage
V=V
10
GS
I = 5.0A
D
V = 4.5V
GS
I = 2.0A
D
DS(ON)
R , DRAIN-S
0
024 6810
I , DRAIN CURRENT (A)
D
Figure 6 Typical On-Resistance vs.
Drain Current and Temperature
0.15
0.6
-50-25 0 255075100125150 T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
3.0
E ( )
0.12
V = 4.5V
GS
I= 2.0A
ESISTA
-
0.09
D
V=V
10
GS
I= 5.0A
D
0.06
E (V)
2.5
I= 1mA
D
2.0
LD V
I = 250µA
D
1.5
A
0.03
DS(ON)
0
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Figure 8 On-Resistance Variation with Temperature
1.0
GS(th)
V,
0.5
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Figure 9 Gate Threshold Variation vs. Ambient Temperature
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OUR
CE C
U
R
R
C
UNC
TION CAP
C
TANC
F
GATE THRESH
OLD VOLTAG
10
8
T = 150°C
ENT (A)
6
A
T = 125°C
A
4
S
I, S
2
0
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 10 Diode Forward Voltage vs. Current
10
V = 30V
E (V)
8
DS
I=A
3
D
ADVANCED INFORMATION
T = 85°C
A
T = 25°C
A
T = -55°C
A
10,000
)
E (p
1,000
I A
100
, J
T
f = 1MHz
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 Typical Junction Capacitance
C
iss
C
oss
C
rss
6
4
2
GS
V
0
0246 81012
Q(nC)
, TOTAL GATE CHARGE
g
Figure 12 Gate Charge
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)
g
g
g
r
RAIN CUR
R
N
T
D
RAIN C
U
R
REN
Electrical Characteristics P-CHANNEL – Q2 (@T
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
ADVANCED INFORMATION
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
10
8
Characteristic Symbol Min Typ Max Unit Test Condition
V = -4.5V
GS
V= -10V
GS
V = -4.0V
GS
BV
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y V
C C C
R
Q
Q
t
D(on)
t
D(off)
= +25°C, unless otherwise specified.)
A
DSS
fs
SD
iss
oss
rss
t
t
f
-60
 
-1
|
 
     
s
d
     
±100 nA
115 150 170 250
2.8
-0.7 -1.2 V
612
36 26 13
8.9
4.3
1.4
1.7
7.6
11.6
79.8
37.8
10
V = -5.0V
DS
8
-1 μA
V
VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±16V, VDS = 0V
-3 V
VDS = VGS, ID = -250μA V
m
V
S
VDS = -5V, ID = -1A VGS = 0V, IS = -2A
           
pF
V
pF
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz nC nC
V nC
nC ns ns
V ns
R ns
= -10V, ID = -1A
GS
= -4.5V, ID = -0.5A
GS
= -20V, VGS = 0V,
DS
= -30V, ID = -2A
DS
= -10V, VDS = -30V,
GS
= 50Ω, ID = -1A
G
(A)
6
E
V = -3.5V
4
D
-I , D 2
0
01 2 3 45
-V , DRAIN -SOURCE VOLTAGE (V)
DS
GS
V = -3.0V
GS
V = -2.8V
GS
V = -2.5V
GS
Figure 13 Typical Output Characteristics
T (A)
6
4
D
-I , 2
0
01 23 45
-V , GATE-SOURCE VOLTAGE (V)
GS
T = 150 CA
T = 125 CA
T = 85CA
T = 25CA
T = -55CA
Figure 14 Typical Transfer Characteristics
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R
R
OUR
ON-R
R
R
OUR
C
O
R
TANC
O
O
R
RAIN-SOUR
C
R
D
R
N
OUR
CE O
N
R
T
N
C
GATE T
H
R
H
O
O
TAG
0.5
0.4
ESISTANCE ( )
0.3
CE
0.2
AIN-S
0.1
, D
DS(ON)
0
02 4 6810
-I , DRAIN SOURCE CURRENT (A)
D
Figure 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.5
V= -4.5V
GS
0.4
ADVANCED INFORMATION
0.3
N-RESISTANCE ( )
URCE
0.2
0.1
DS(ON)
R , DRAIN-S
0
024 6 810
-I , DRAIN SOURCE CURRENT (A)
D
Figure 17 Typical On-Resistance vs.
Drain Current and Temperature
0.30
E ( )
0.25
A
0.20
ESIS
-
0.15
0.10
-S
AI
0.05
,
DS(on)
0
-50 -25 0 25 50 75 100 125 150
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T , JUNCTION TEMPERATURE ( C)
J
Figure 19 On-Resistance Variation with Temperat ure
T = 125CA
-4.
V=5V
GS
-2.0
I= A
D
V= -10V I= A
V = -4.5V
GS
V = -10V
GS
T = 150CA
T = 85CA
T = 25CA
T = -55CA
GS
-5.0
D
1.0
0.9
E ( )
0.8
0.7
ESIS
0.6
N-
E
0.5
0.4
0.3
AIN-S
0.2
, D
0.1
DS(ON)
0
0 2 4 6 8 101214161820
2.0
1.8
E
1.6
1.4
1.2
, D
1.0
DS(ON)
ON-RESISTANCE (NORMALIZED)
0.8
0.6
-50 -25 0 25 50 75 100 125 150
3.0
E (V)
2.5
L
2.0
LD V
1.5
ES
1.0
0.5
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
Figure 20 Gate Threshold Variation vs. Ambient Temperature
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I = -1.0A
D
I = -0.5A
D
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 16 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
V = -10V
GS
I = -5.0A
D
V = -4.5V
GS
I = -2.0A
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 18 On-Resistance Variation with Temperature
-I = 1mAD
-I = 250µA
D
T , AMBIENT TEMPERATURE (°C)
A
November 2013
© Diodes Incorporated
Page 8
OUR
C
CUR
R
T
C
UNC
TION CAPAC
T
C
F
GAT
OUR
C
OLTAG
10
8
(A)
EN
6
T= 150CA
T= 125CA
E
4
S
-I , S 2
0
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 21 Diode Forward Voltage vs. Current
10
8
E (V)
ADVANCED INFORMATION
6
E V
V = -30V
DS
I= -2A
D
T= 85CA
T= 25CA
T= -55CA
10,000
)
E (p
AN
1,000
I
C
iss
100
C
, J
T
10
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 22 Typical Junction Capacitance
oss
C
rss
f = 1MHz
4
E-S
2
GS
-V ,
0
02 46 810
Q , TOTAL GATE CHARGE (nC)
g
Figure 23 Gate-Charge Characteristics
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCED INFORMATION
A
Pin#1
C0.10
E
Z (4X)
D
1
e
b (8x)
L (8x)
A1
A3
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X (8x)
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C
Y (8x)
Y1
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Dim Min Max Typ
Dimensions
V-DFN3030-8
A 0.75 0.85 0.80 A1 0 0.05 0.02 A3
b 0.25 0.35 0.30
D 2.95 3.05 3.00
E 2.95 3.05 3.00
e
L 0.55 0.65 0.60
Z
 
 
 
All Dimensions in mm
C 0.650
X 0.400 Y 0.850
Y1 3.400
0.203
0.65
0.375
Value
(in mm)
November 2013
© Diodes Incorporated
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
ADVANCED INFORMATION
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
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