Diodes DMC6070LFDH User Manual

Product Summary

Device

Q1 60V

Q2 -60V

V

(BR)DSS

R

85 mΩ @ V

120 mΩ @ VGS = 4.5V

150 mΩ @ V

250 mΩ @ VGS = -4.5V

DS(ON)

max

GS

= 10V

= -10V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 Power Management Functions

 Analog Switch

ADVANCED INFORMATION

V-DFN3030-8

D1

D2

Bottom View

S1

G1

S2

G2

I

max

D

TA = +25°C

3.1A

2.7A

-2.4A

-1.8A

DMC6070LFDH

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Complementary Pair MOSFET

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: V-DFN3030-8

 Case Material: Molded Plastic, “Green” Molding Compound.

 UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Weight: 0.02 grams (approximate)

D1

G1

S1

N-Channel MOSFET

G2

P-Channel MOSFET

Equivalent Circuit

D2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMC6070LFDH-7 V-DFN3030-8 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

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DMC6070LFDH

Document number: DS36083 Rev. 6 - 2

C60 = Product Type Marking Code

YYWW

YYWW = Date Code Marking YY = Last Digit of Year (ex: 12 for 2012) WW = Week Code (01 ~ 53)

C60

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T

R

T T

H

R

TANC

Maximum Ratings Q1 N-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, Duty cycle = 1%)

Maximum Ratings Q2 P-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, Duty cycle = 1%)

ADVANCED INFORMATION

= +25°C, unless otherwise specified.)

A

= +25°C

Steady

State

t<10s

= +25°C, unless otherwise specified.)

A

Steady

State

t<10s

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

DMC6070LFDH

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

60 V

±20 V

3.1

2.5

3.9

3.1

A

2 A

15 A

-60 V

±20 V

-2.4

-1.9

-2.9

-2.3

A

-2 A

-12 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

t<10s 60 Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range

Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

P

R

T

J, TSTG

θJA

θJC

D

1.4 W 91

°C/W

32

-55 to +150 °C

1

D = 0.9 D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Sin gle Pu lse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R



JA JA

R = 116°C/W



JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 1 Transient Thermal Resistance

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)

g

r

R

C

U

R

RENT

R

CUR

RENT

Electrical Characteristics N-CHANNEL – Q1 (@T

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Qg Total Gate Charge (VGS = 4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time

ADVANCED INFORMATION

Turn-Off Delay Time Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect

7. Guaranteed by design. Not subject to production testing

10

8

(A)

6

Characteristic Symbol Min Typ Max Unit Test Condition

V= 10V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.5V

GS

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y V

C C C

R

Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

f

= +25°C, unless otherwise specified.)

A

|

s

d

60

   

1



 

           



1 μA

±100 nA



3 V 60 85 72 120

3.7



0.7 1.2 V

731

34 23

1.3

11.5

5.2

2.1

1.5

9.6 11 61 21

           

10

V = 5.0VDS

8

(A)

6

DMC6070LFDH

V

VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±16V, VDS = 0V

VDS = VGS, ID = 250μA V

= 10V, ID = 1.5A

mΩ

pF pF pF

nC nC nC nC ns ns ns ns

GS

V

= 4.5V, ID = 0.5A

GS

S

VDS = 5V, ID = 1.5A VGS = 0V, IS = 3A

= 20V, VGS = 0V,

V

DS

f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

V

= 30V, ID = 3A

DS

V

= 10V, VDS = 30V,

GS

R

= 50Ω, RL = 20V

G

AIN

4

D

I, D

2

V= 3.0V

V= 2.8V

GS

0

0123 45

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Figure 2 Typical Output Characteristic

4

AIN

D

I, D

2

0

0123 45

V , GATE-SOURCE VOLTAGE (V)

GS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 3 Typical Transfer Characteristics

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R

OUR

ON-R

R

RAIN-SOUR

CE O

N

R

TAN

C

O

R

RAIN-SOUR

C

R, D

RAIN-SOUR

CE O

N

R

N

C

G

TE T

H

RESH

O

OLTAG

0.10



0.09

0.08

ESISTANCE ( )

V = 4.0VGS

0.07

CE

0.06

V = 10VGS

0.05

AIN-S

, D

0.04

DS(ON)

0.03 02 46 810

I , DRAIN-SOURCE CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.20



ADVANCED INFORMATION

0.15

V = 4.5VGS

N-RESISTANCE ( )

0.10

URCE

0.05

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

DMC6070LFDH

0.15



E ( )

0.12

ESIS

-

0.09

I= 1.5A

0.06

0.03

, D

DS(ON)

0

02468101214161820

Figure 5 Typical Drain-Source On-Resistance

1.8

1.6

E

1.4

1.2

, D

1.0

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

D

I= 0.5A

D

V , GATE-SOURCE VOLTAGE (V)

GS

vs. Gate-Source Voltage

V=V

10

GS

I = 5.0A

D

V = 4.5V

GS

I = 2.0A

D

DS(ON)

R , DRAIN-S

0

024 6810

I , DRAIN CURRENT (A)

D

Figure 6 Typical On-Resistance vs.

Drain Current and Temperature

0.15

0.6

-50-25 0 255075100125150 T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

3.0



E ( )

0.12

V = 4.5V

GS

I= 2.0A

ESISTA

-

0.09

D

V=V

10

GS

I= 5.0A

D

0.06

E (V)

2.5

I= 1mA

D

2.0

LD V

I = 250µA

D

1.5

A

0.03

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Figure 8 On-Resistance Variation with Temperature



1.0

GS(th)

V,

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J



Figure 9 Gate Threshold Variation vs. Ambient Temperature

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OUR

CE C

U

R

C

UNC

TION CAP

C

TANC

F

GATE THRESH

OLD VOLTAG

10

8

T = 150°C

ENT (A)

6

A

T = 125°C

A

4

S

I, S

2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 10 Diode Forward Voltage vs. Current

10

V = 30V

E (V)

8

DS

I=A

3

D

ADVANCED INFORMATION

T = 85°C

A

T = 25°C

A

T = -55°C

A

DMC6070LFDH

10,000

)

E (p

1,000

I A

100

, J

T

f = 1MHz

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 Typical Junction Capacitance

C

iss

C

oss

C

rss

6

4

2

GS

V

0

0246 81012

Q(nC)

, TOTAL GATE CHARGE

g

Figure 12 Gate Charge

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)

g

r

RAIN CUR

R

N

T

D

RAIN C

U

R

REN

Electrical Characteristics P-CHANNEL – Q2 (@T

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time

ADVANCED INFORMATION

Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect

9. Guaranteed by design. Not subject to production testing

10

8

Characteristic Symbol Min Typ Max Unit Test Condition

V = -4.5V

GS

V= -10V

GS

V = -4.0V

GS

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y V

C C C

R

Q

t

D(on)

t

D(off)

= +25°C, unless otherwise specified.)

A

DSS

fs

SD

iss

oss

rss

t

f

-60

   

-1



|

 

     

s

d

     



±100 nA

 115 150 170 250

2.8

-0.7 -1.2 V

612

36 26 13

8.9

4.3

1.4

1.7

7.6

11.6

79.8

37.8

10

V = -5.0V

DS

8



-1 μA

V

VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±16V, VDS = 0V

-3 V



VDS = VGS, ID = -250μA V

mΩ

V

S

VDS = -5V, ID = -1A VGS = 0V, IS = -2A

           

pF

V

pF

f = 1MHz

pF

Ω

VDS = 0V, VGS = 0V, f = 1MHz nC nC

V nC

nC ns ns

V ns

R ns

DMC6070LFDH

= -10V, ID = -1A

GS

= -4.5V, ID = -0.5A

GS

= -20V, VGS = 0V,

DS

= -30V, ID = -2A

DS

= -10V, VDS = -30V,

GS

= 50Ω, ID = -1A

G

(A)

6

E

V = -3.5V

4

D

-I , D 2

0

01 2 3 45

-V , DRAIN -SOURCE VOLTAGE (V)

DS

GS

V = -3.0V

GS

V = -2.8V

GS

V = -2.5V

GS

Figure 13 Typical Output Characteristics

T (A)

6

4

D

-I , 2

0

01 23 45

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 150 CA

T = 125 CA

T = 85CA

T = 25CA

T = -55CA

Figure 14 Typical Transfer Characteristics

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R

OUR

ON-R

R

OUR

C

O

R

TANC

O

R

RAIN-SOUR

C

R

D

R

N

OUR

CE O

N

R

T

N

C

GATE T

H

R

H

O

TAG

0.5



0.4

ESISTANCE ( )

0.3

CE

0.2

AIN-S

0.1

, D

DS(ON)

0

02 4 6810

-I , DRAIN SOURCE CURRENT (A)

D

Figure 15 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.5



V= -4.5V

GS

0.4

ADVANCED INFORMATION

0.3

N-RESISTANCE ( )

URCE

0.2

0.1

DS(ON)

R , DRAIN-S

0

024 6 810

-I , DRAIN SOURCE CURRENT (A)

D

Figure 17 Typical On-Resistance vs.

Drain Current and Temperature

0.30



E ( )

0.25

A

0.20

ESIS

-

0.15

0.10

-S

AI

0.05

,

DS(on)

0

-50 -25 0 25 50 75 100 125 150

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T , JUNCTION TEMPERATURE ( C)

J

Figure 19 On-Resistance Variation with Temperat ure

T = 125CA

-4.

V=5V

GS

-2.0

I= A

D

V= -10V I= A

V = -4.5V

GS

V = -10V

GS

T = 150CA

T = 85CA

T = 25CA

T = -55CA

GS

-5.0

D

DMC6070LFDH

1.0



0.9

E ( )

0.8

0.7

ESIS

0.6

N-

E

0.5

0.4

0.3

AIN-S

0.2

, D

0.1

DS(ON)

0

0 2 4 6 8 101214161820

2.0

1.8

E

1.6

1.4

1.2

, D

1.0

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150

3.0

E (V)

2.5

L

2.0

LD V

1.5

ES

1.0

0.5

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150



Figure 20 Gate Threshold Variation vs. Ambient Temperature

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I = -1.0A

D

I = -0.5A

D

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 16 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

V = -10V

GS

I = -5.0A

D

V = -4.5V

GS

I = -2.0A

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 18 On-Resistance Variation with Temperature

-I = 1mAD

-I = 250µA

D

T , AMBIENT TEMPERATURE (°C)

A

November 2013

OUR

C

CUR

R

T

C

UNC

TION CAPAC

T

C

F

GAT

OUR

C

OLTAG

10

8

(A)

EN

6

T= 150CA

T= 125CA

E

4

S

-I , S 2

0

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 21 Diode Forward Voltage vs. Current

10

8

E (V)

ADVANCED INFORMATION

6

E V

V = -30V

DS

I= -2A

D

T= 85CA

T= 25CA

T= -55CA

DMC6070LFDH

10,000

)

E (p

AN

1,000

I

C

iss

100

C

, J

T

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 22 Typical Junction Capacitance

oss

C

rss

f = 1MHz

4

E-S

2

GS

-V ,

0

02 46 810

Q , TOTAL GATE CHARGE (nC)

g

Figure 23 Gate-Charge Characteristics

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCED INFORMATION

A

Pin#1

C0.10

E

Z (4X)

D

1

e

b (8x)

L (8x)

A1

A3

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X (8x)

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C

Y (8x)

Y1

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DMC6070LFDH

Dim Min Max Typ

Dimensions

V-DFN3030-8

A 0.75 0.85 0.80 A1 0 0.05 0.02 A3

b 0.25 0.35 0.30

D 2.95 3.05 3.00

E 2.95 3.05 3.00

e

L 0.55 0.65 0.60

Z

 

All Dimensions in mm

C 0.650

X 0.400 Y 0.850

Y1 3.400

0.203

0.65

0.375

Value

(in mm)

November 2013

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCED INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMC6070LFDH

POWERDI is a registered trademark of Diodes Incorporated.

DMC6070LFDH

Document number: DS36083 Rev. 6 - 2

10 of 10

www.diodes.com

November 2013