Diodes DMC6070LFDH User Manual
Product Summary
Device
Q1 60V
Q2 -60V
V
(BR)DSS
R
85 mΩ @ V
120 mΩ @ VGS = 4.5V
150 mΩ @ V
250 mΩ @ VGS = -4.5V
DS(ON)
max
GS
GS
= 10V
= -10V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
Power Management Functions
Analog Switch
ADVANCED INFORMATION
V-DFN3030-8
D1
D1
D2
D2
Bottom View
S1
G1
S2
G2
I
max
D
TA = +25°C
3.1A
2.7A
-2.4A
-1.8A
DMC6070LFDH
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: V-DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.02 grams (approximate)
D1
G1
S1
N-Channel MOSFET
G2
P-Channel MOSFET
Equivalent Circuit
D2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMC6070LFDH-7 V-DFN3030-8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated.
DMC6070LFDH
Document number: DS36083 Rev. 6 - 2
C60 = Product Type Marking Code
YYWW
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 12 for 2012)
WW = Week Code (01 ~ 53)
C60
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T
R
T T
H
R
R
TANC
Maximum Ratings Q1 N-CHANNEL (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Maximum Ratings Q2 P-CHANNEL (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
ADVANCED INFORMATION
= +25°C, unless otherwise specified.)
A
= +25°C
Steady
State
t<10s
= +25°C, unless otherwise specified.)
A
Steady
State
t<10s
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
DMC6070LFDH
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
60 V
±20 V
3.1
2.5
3.9
3.1
A
A
2 A
15 A
-60 V
±20 V
-2.4
-1.9
-2.9
-2.3
A
A
-2 A
-12 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
t<10s 60
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
P
R
R
T
J, TSTG
θJA
θJC
D
1.4 W
91
°C/W
32
-55 to +150 °C
1
D = 0.9
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Sin gle Pu lse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R (t) = r(t) * R
JA JA
R = 116°C/W
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIME (sec)
Figure 1 Transient Thermal Resistance
POWERDI is a registered trademark of Diodes Incorporated.
DMC6070LFDH
Document number: DS36083 Rev. 6 - 2
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© Diodes Incorporated
)
g
g
g
r
R
C
U
R
RENT
R
CUR
RENT
Electrical Characteristics N-CHANNEL – Q1 (@T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
ADVANCED INFORMATION
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing
10
8
(A)
6
Characteristic Symbol Min Typ Max Unit Test Condition
V= 10V
GS
V= 4.5V
GS
V= 4.0V
GS
V= 3.5V
GS
BV
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
R
Q
Q
t
D(on)
t
D(off)
DSS
fs
SD
iss
oss
rss
t
t
f
= +25°C, unless otherwise specified.)
A
|
s
d
60
1
1 μA
±100 nA
3 V
60 85
72 120
3.7
0.7 1.2 V
731
34
23
1.3
11.5
5.2
2.1
1.5
9.6
11
61
21
10
V = 5.0VDS
8
(A)
6
DMC6070LFDH
V
VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±16V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 10V, ID = 1.5A
mΩ
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
GS
V
= 4.5V, ID = 0.5A
GS
S
VDS = 5V, ID = 1.5A
VGS = 0V, IS = 3A
= 20V, VGS = 0V,
V
DS
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
V
= 30V, ID = 3A
DS
V
= 10V, VDS = 30V,
GS
R
= 50Ω, RL = 20V
G
AIN
4
D
I, D
2
V= 3.0V
V= 2.8V
GS
0
0123 45
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Figure 2 Typical Output Characteristic
4
AIN
D
I, D
2
0
0123 45
V , GATE-SOURCE VOLTAGE (V)
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Figure 3 Typical Transfer Characteristics
POWERDI is a registered trademark of Diodes Incorporated.
DMC6070LFDH
Document number: DS36083 Rev. 6 - 2
3 of 10
www.diodes.com
November 2013
© Diodes Incorporated
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