Diodes DMC6040SSD User Manual

DMC6040SSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

Device

Q1

N-Channel

Q2

P-Channel

V

(BR)DSS

60V

-60V

R

DS(on) max

40mΩ @ V

55mΩ @ VGS = 4.5V

110mΩ @ V

130mΩ @ VGS = -4.5V

= 10V

GS

GS

= -10V

D

TA = +25°C

6.5 A

5.6 A

-3.9 A

-3.6 A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power Management Functions

• Backlighting

NEW PRODUCT

Pin1

Top View

ADVANCE INFORMATION

) and yet maintain superior switching

DS(ON)

SO-8

S1

G1

S2

G2

Top View

Pin Configuration

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1

D1

D1

G1

D2

D2

S1

Q1 N-Channel MOSFET

G

2

e3

D2

S2

Q2 P-Channel MOSFET

Ordering Information (Note 4)

Part Number Case Packaging

DMC6040SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

8 5

DMC6040SSD

Document number: DS36829 Rev. 1 - 2

C6040SD

WWYY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

C6040SD

WWYY

1 4

www.diodes.com

1 of 9

= Manufacturer’s Marking
C6040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14= 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

June 2014

© Diodes Incorporated

θ

)

g

g

)

r

)

r

r

DMC6040SSD

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Q1 Q2 Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH

Steady

State

t<10s

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

I

AS

E

AS

60 -60 V

±20 ±20 V

5.1

4.1

6.5

5.2

-3.1

-2.5

-3.9

-3.1

A

A

2.1 -2.1 A
28 -19 A

17.2 -17.6 A

14.7 15.4 mJ

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t < 10s 61

= +25°C

T

A

TA = +70°C

Steady state

t<10s 49

P

R

P

R

R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1.24

0.8

101

1.56

1.0

W

°C/W

W

80

°C/W

14.7

-55 to +150 °C

Electrical Characteristics N-Channel Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

1 µA

±100

nA

VGS = 0V, ID = 250µA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

1

⎯
⎯

⎯

⎯

33 40

37 55

0.7 1.2 V

3 V

VDS = VGS, ID = 250µA
V

m

VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1A

= 10V, ID = 8A

GS

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Total Gate Charge (VGS = 10V) Qg ⎯
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. UIS in production with L = 0.1mH, starting T

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

t

t

= +25°C.

A

Q
Q

D(on

t

D(off

t

t

r

Q

s

d

f

r

⎯
⎯
⎯
⎯
⎯
⎯

⎯

⎯

⎯

1130

69

42

1.7

20.8

9.4

3.3

3.0

3.6

1.8

20.1

4.3

14.2

7.5

⎯
⎯

pF

= 15V, VGS = 0V f = 1.0MHz

V

DS

⎯
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯
⎯
⎯

nC

= 30V, ID = 4.3A

V

DS

⎯
⎯
⎯
⎯

nS

V

= 10V, VDD = 30V, RG = 6Ω,

GS

= 4.3A

I

D

⎯

⎯

⎯

nS

IS = 4.3A, dI/dt = 100A/s

nC

IS = 4.3A, dI/dt = 100A/s

DMC6040SSD

Document number: DS36829 Rev. 1 - 2

2 of 9

www.diodes.com

June 2014

© Diodes Incorporated

R

CUR

RENT

RAIN CUR

R

N

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

RAIN

OUR

C

R

R

OUR

CE ON-R

TANC

DMC6040SSD

20.0

V = 10VGS

V= 5.0V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.5V

GS

V= 2.8V

GS

V= 3.0V

GS

(A)

AIN

D

I, D

18.0

16.0

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0
012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

ADVANCE INFORMATION

NEW PRODUCT

0.05

Ω

0.045

ESISTANCE ( )

CE

0.04

0.035

V = 4.5VGS

20

V = 5.0VDS

18

16

14

(A)

E

12

10

8

6

D

I, D

4

2

0

1 1.5 2 2.5 3 3.5 4

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

0.09

Ω

0.08

0.07

V = 10VGS

T = 125°C

A

T = 150°C

A

ESISTANCE ( )

0.06

0.05

CE

A

T = 85°C

A

AIN-S

, D

0.03

V = 10VGS

0.025

DS(ON)

0.02
02468101214161820

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.4

AIN-S

, D

0.04

0.03

T = 25°C

A

T = -55°C

0.02

DS(ON)

0.01
02468101214161820

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.1

A

Ω

2.2

V=V

10

2

E

1.8

1.6

-S

GS

I= 8A

D

1.4

1.2

, D

1

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

0.4

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 5 On-Resistance Variation with Temperature

V = 4.5V

GS

I= 5A

D

°

0.09

E ( )

0.08

0.07

ESIS

0.06

V = 4.5V

GS

I= 5A

D

0.05

V=V

10

GS

I= 8A

D

AIN-S

, D

0.04

0.03

0.02

0.01

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

°

DMC6040SSD

Document number: DS36829 Rev. 1 - 2

3 of 9

www.diodes.com

June 2014

© Diodes Incorporated