Diodes DMC4050SSD User Manual

A

f

1

40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

max

Device

Q1 40V

Q2 -40V

V

(BR)DSS

R

DS(on)

45mΩ @ V
60mΩ @ VGS= 4.5V
45mΩ @ V

60mΩ @ VGS= -4.5V

max

GS

= -10V

GS

= 10V

D

TA = 25°C

(Notes 3 & 5)

5.5A

4.2A

-5.8A

-4.2A

Description and Applications

This MOSFET has been designed to ensure that R
channel FET are matched to minimize losses in both arms of the
bridge. The DMC4040SSD is optimized for use in 3 phases brushless
DC motor circuits (BLDC), CCFL backlighting.

• 3 phases BLDC motor

• CCFL backlighting

SO-8

G1

S2

G2

Top View

DS(on)

of N and P

Top View

Product Line o

Diodes Incorporated

DMC4050SSD

Features and Benefits

• Matched N & P R

• Fast switching – Minimizes switching losses

• Dual device – Reduces PCB area

• "Green" component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

- Minimizes power losses

DS(on)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1S1

D1

D2

D2

G1

D

G2

S1

Equivalent Circuit

D2

S2

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC4050SSD-13 C4050SD 13 12 2,500

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

C4050SD

YY

WW

= Manufacturer’s Marking
C4050SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01 - 53)

1 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A

f

Product Line o

Diodes Incorporated

DMC4050SSD

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current
Continuous Source Current (Body diode) (Notes 3 & 5)
Pulsed Source Current (Body diode) (Notes 4 & 5)

Thermal Characteristics @T

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Notes 5 & 7)
Operating and Storage Temperature Range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2

V

DSS

V

(Notes 3 & 5)

= 10V

V

GS

V

= 10V

GS

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

TA = 70°C (Notes 3 & 5)
(Notes 2 & 5) 4.2 -4.2
(Notes 2 & 6) 5.3 -5.3
(Notes 4 & 5)

= 25°C unless otherwise specified

A

(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)

(Notes 2 & 5)
(Notes 2 & 6) 70
(Notes 3 & 5) 58

GSS

IDM

I

SM

P

R

R

T

J, TSTG

ID

I

S

θJA

θJL

D

40 -40

±20 ±20

5.8 -5.8

4.38 -4.52

24.1 -24.9

2.5 -2.5

24.1 -24.9

1.25
10

1.8

14.3

2.14

17.2

100

51

-55 to +150 °C

Units

V

A

W

mW/°C

°C/W

2 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A

f

Thermal Characteristics

Product Line o

Diodes Incorporated

DMC4050SSD

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

I

0.1 1 10

1s

100ms

Single Pulse
T

= 25°C

amb

One active die

10ms

1ms

100us

VDS Drain-Source Voltage (V)

N-channe l Safe O p erating A rea

R(theta junction-to-ambient), R

100

One active die

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

θJA

Single Pulse

D=0.05

D=0.1

R

DS(ON)

Limited

10

DC

1

1s

amb

100ms

= 25°C

100m

Drain Current (A)

-I

Single Pulse
T

D

10m

One active die

0.1 1 10

10ms

1ms

100us

-VDS Drain-Source Voltage (V)

P-channel Safe Operating Area

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Two active die

One active die

Transient Thermal Impedance

Single Pulse
T

= 25°C

100

10

amb

One active die

Derating Curve

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

3 of 11

www.diodes.com

© Diodes Incorporated

March 2011

A

f

)

g

g

g

g

r

R

C

U

R

R

T

RAIN

CUR

R

N

T

Electrical Characteristics N-CHANNEL @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

30

= 25°C unless otherwise specified

A

40 - - V

BV

DSS

- - 1.0

DSS

- - ±100 nA

I

GSS

0.8 1.3 1.8 V

V

GS(th

R

DS (ON)

|Y
V

SD

-

|

fs

- 12.6 - S

- 0.7 1.0 V

20
33

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s
d

f

- 1790.8 -

- 160.6 -

- 120.5 -

- 1.03 -

- 37.56 -

- 7.8 -

- 6.6 -

8.08

-

15.14

-

24.29

-

5.27

-

30

25

V = 8.0V

GS

25

V = 5V

DS

(A)
EN

20

V = 4.5V

GS

(A)

20

E

15

V = 4.0V

GS

AIN

10

D

I, D

V = 3.5V

GS

5

V = 3.0V

V = 2.5V

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

GS

Fig. 1 Typica l O ut put Chara ct er istic

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

www.diodes.com

4 of 11

15

10

D

I, D

5

0

012345

Product Line o

Diodes Incorporated

DMC4050SSD

VGS = 0V, ID = 250μA

μA

VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 3A

45
60

- ns

- ns

- ns

- ns

V , GATE-SOURCE VOLT AGE (V)

GS

Fig. 2 Typical Transfer Characteristic

V

mΩ

GS

VGS = 4.5V, ID = 3A
VDS = 5V, ID = 3A
VGS = 0V, IS = 1A

pF
pF
pF

Ω
nC
nC
nC

T = 125°C

A

= 20V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 10V, VDS = 20V,

GS

I

= 3A

D

V

= 10V, VDS = 20V,

GS

= 3A

I

D

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

March 2011

© Diodes Incorporated

A

f

R

RAIN-SOUR

CE O

N-R

TAN

C

OUR

CE C

U

R

R

T

Ω

0.06

0.05

0.04

Ω

E ( )

V = 10V

GS

0.03

0.04

ESIS

Product Line o

Diodes Incorporated

DMC4050SSD

V = 4.5V

GS

0.03

0.02

V = 10V

GS

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent and G ate V oltage

1.7

V = 10V

1.5

GS

I = 20A

D

1.3

1.1

0.9

DSON

R , DRAIN -SOURCE

0.7

ON-RESISTANCE (NORMALIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On- Resistance Variation with Temperature

3.0

2.7

V = 4.5V

GS

I = 10A

D

T = 150°C

A

0.02

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 4 Typical On-Resistance

vs. Drain C urrent and Temperatu r e

0.06

Ω

0.05

0.04

0.03

V = 4.5V

GS

I = 10A

D

0.02

V = 10V

0.01

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On- Resistance Variation with Temperature

GS

I = 20A

D

20
18

2.4

2.1

1.8

I = 1mA

1.5

D

1.2

I = 250µA

0.9

D

0.6

GS(TH)

0.3

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

5 of 11

www.diodes.com

16

(A)

14

EN

12

T = 25°C

A

10

8
6

S

I, S

4
2

0

0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLT AGE (V)

SD

Fig. 8 Diode Forward Vol tage vs. Current

March 2011

© Diodes Incorporated

A

f

C, C

P

C

T

C

F

GE CUR

R

T

GAT

OUR

C

OLTAG

T

R

T T

H

R

R

TANC

10,000

)

1,000

E (p
AN

I
A
A

100

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

C

oss

C

rss

Fig. 9 Typical Total Capacitance

f = 1MHz

10,000

(nA)

1,000

EN

100

10

DSS

I , LEAKA

1

0 5 10 15 20 25 30 35 40

Product Line o

Diodes Incorporated

DMC4050SSD

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Leakage Current

vs. Drain-S ource Voltage

10

V = 20V

8

E (V)

6

E V

4

E-S

2

GS

V,

0

0 5 10 15 20 25 30 35 40

Q , TOTAL GATE CHARGE (nC)

g

DS

I = 12A

D

Fig. 11 Gate-Ch ar g e C haracte r i s t ics

1

E

D = 0.7

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL
E

0.01

ANSIEN

r(t),

0.001

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

0.0001

0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

D = 0.9

R (t) = r(t) *

θ

JA

R = 94°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 12 Transi ent Thermal Response

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

6 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A

f

)

g

g

g

g

)

r

)

R

CUR

RENT

R

CUR

RENT

Product Line o

Diodes Incorporated

DMC4050SSD

Electrical Characteristics P-CHANNEL

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

30

= 25°C unless otherwise specified

@TA

-40 - - V

BV

DSS

- - -1.0

DSS

I

GSS

- - ±100 nA

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.8 -1.3 -1.8 V

-

|

- 16.6 - S

- -0.7 -1.0 V

28
30

- 1643.17 - pF

- 179.13 - pF

- 127.82 - pF

- 6.43 -

- 33.66 - nC

- 5.54 - nC

- 7.30 - nC

- 6.85 - ns

- 14.72 - ns

- 53.65 - ns

- 30.86 - ns

C
C

t

t

C

oss
rss

R

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

30

45
60

VGS = 0V, ID = -250μA

μA

VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = -250μA

= -10V, ID = -3A

V

mΩ

GS

VGS = -4.5V, ID = -3A
VDS = -5V, ID = -3A
VGS = 0V, IS = -1A

V

= -20V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
V

= -10V, VDS = -20V,

GS

I

= -3A

D

V

= -10V, VDS = -20V,

GS

= -3A

I

D

(A)

AIN

D

-I , D

25

20

15

10

(A)

AIN

5

-I , D

25

20

V = -5V

DS

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

T = 125°C

A

15

10

D

5

0

0 0.5 1 1.5 2

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 13 Typical Output Characteristic

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

www.diodes.com

7 of 11

0

012345

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 14 Typical Transfer Characteristic

© Diodes Incorporated

March 2011

A

f

R

R

OUR

CE O

R

TANC

R

R

OUR

CE O

R

TANC

7

R

RAIN-SOUR

C

R

R

OUR

CE ON-R

TANC

O

U

R

CE C

U

R

R

T

0.05

Ω

E ( )

0.04

Ω

E ( )

V = -10V

GS

0.04

0.03
ESIS
N-

0.02

ESIS
N-

0.03

V = -4.5V

GS

V = -10V

GS

0.02

AIN-S
, D

0.01

AIN-S

0.01
, D

Product Line o

Diodes Incorporated

DMC4050SSD

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 15 Typical On-Resistance

vs. Drain C urrent an d G at e Vol t age

1.

1.5

E

1.3

1.1

, D

0.9

DSON

0.7

ON-RESISTA NCE (NORMA LIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 17 On- R esista nce V ar i ation with Temperatu r e

2.0

V = -10V

GS

I = -20A

D

V = -4.5V

GS

I = -10A

D

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

Fig. 16 Typical On-Resistance

vs. Drain C urrent and Tempera tu r e

0.06

Ω

E ( )

0.05

0.04

ESIS

0.03

0.02

AIN-S

0.01

, D

DSON

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 18 On- Resistance Variation with Temperatu r e

V = -4.5V

GS

I = -10A

D

V = -10V

GS

I = -20A

D

20
18

1.5

I = -1mA

1.0

I = -250µA

D

D

0.5

GS(TH)

-V , GATE THRESHOLD VOLTAGE (V)
0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 19 Gat e Threshold Variation vs. Ambien t Temperature

(A)
EN

14
12

T = 25°C

A

10

8
6

S

-I , S
4

2
0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLT AGE (V)

SD

Fig. 20 Diode Forward Voltage vs. Current

16

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

8 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A

f

C, CAPACITAN

C

F

GE CUR

R

N

T

GAT

OUR

C

OLTAG

T

RAN

N

T T

HER

R

T

N

C

10,000

)

1,000

E (p

C

iss

10,000

(nA)

1,000

E

Product Line o

Diodes Incorporated

T = 150°C

A

T = 125°C

A

DMC4050SSD

C

oss

100

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLT AGE (V)

DS

C

rss

Fig. 21 Typical Total Capacitance

10

V = -20V

E (V)

E V

E-S

GS

-V ,

8

6

4

2

DS

I = -12A

D

100

T = 85°C

A

10

DSS

-I , LEAKA

T = 25°C

A

1

0 5 10 15 20 25 30 35 40

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 22 Typical Leakage Current

vs. Drain-Source Voltage

0

0 5 10 15 20 25 30 35 40

Q , TOTAL GATE CHARGE (nC)

g

Fig. 23 Gate-Charge Characteristics

1

E

D = 0.7

D = 0.5

A

D = 0.3

ESIS

0.1

D = 0.1

MAL

0.01

SIE

r(t),

0.001

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

0.0001

0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

D = 0.9

1

R (t) = r(t) *

θ

JA

R = 94°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 24 Transient Thermal Response

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

9 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A

f

Package Outline Dimensions

E1

E

A2

A

e

b

D

Suggested Pad Layout

X

C2

Y

A3

A1

h

Detail ‘A’

°

45

C1

L

0.254

Gaug e Plan e
Seating Plane

7°~9

°

Product Line o

Diodes Incorporated

Dim Min Max

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ
h - 0.35

Detail ‘A’

Dimensions Value (in mm)

X 0.60

Y 1.55
C1 5.4
C2 1.27

L 0.62 0.82

θ

All Dimensions in mm

DMC4050SSD

SO-8

0° 8°

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

10 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A

f

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

Product Line o

Diodes Incorporated

DMC4050SSD

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

11 of 11

www.diodes.com

March 2011

© Diodes Incorporated