Diodes DMC4050SSD User Manual

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40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

max

Device

Q1 40V

Q2 -40V

V

(BR)DSS

R

DS(on)

45mΩ @ V 60mΩ @ VGS= 4.5V 45mΩ @ V

60mΩ @ VGS= -4.5V

max

GS

= -10V

GS

= 10V

D

TA = 25°C

(Notes 3 & 5)

5.5A

4.2A

-5.8A

-4.2A

Description and Applications

This MOSFET has been designed to ensure that R channel FET are matched to minimize losses in both arms of the bridge. The DMC4040SSD is optimized for use in 3 phases brushless DC motor circuits (BLDC), CCFL backlighting.

• 3 phases BLDC motor

• CCFL backlighting

SO-8

G1

S2

G2

Top View

DS(on)

of N and P

Top View

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DMC4050SSD

Features and Benefits

• Matched N & P R

• Fast switching – Minimizes switching losses

• Dual device – Reduces PCB area

• "Green" component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

- Minimizes power losses

DS(on)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1S1

D1

D2

G1

D

G2

S1

Equivalent Circuit

D2

S2

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC4050SSD-13 C4050SD 13 12 2,500

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

C4050SD

YY

WW

= Manufacturer’s Marking C4050SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53)

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DMC4050SSD

Maximum Ratings @T

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current Continuous Source Current (Body diode) (Notes 3 & 5) Pulsed Source Current (Body diode) (Notes 4 & 5)

Thermal Characteristics @T

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Notes 5 & 7) Operating and Storage Temperature Range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2

V

DSS

V

(Notes 3 & 5)

= 10V

V

GS

V

= 10V

GS

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

TA = 70°C (Notes 3 & 5) (Notes 2 & 5) 4.2 -4.2 (Notes 2 & 6) 5.3 -5.3 (Notes 4 & 5)

= 25°C unless otherwise specified

A

(Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5)

(Notes 2 & 5) (Notes 2 & 6) 70 (Notes 3 & 5) 58

GSS

IDM

I

SM

P

R

T

J, TSTG

ID

I

S

θJA

θJL

D

40 -40

±20 ±20

5.8 -5.8

4.38 -4.52

24.1 -24.9

2.5 -2.5

24.1 -24.9

1.25 10

1.8

14.3

2.14

17.2

100

51

-55 to +150 °C

Units

V

A

W

mW/°C

°C/W

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Thermal Characteristics

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DMC4050SSD

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

I

0.1 1 10

1s

100ms

Single Pulse T

= 25°C

amb

One active die

10ms

1ms

100us

VDS Drain-Source Voltage (V)

N-channe l Safe O p erating A rea

R(theta junction-to-ambient), R

100

One active die

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

θJA

Single Pulse

D=0.05

D=0.1

R

DS(ON)

Limited

10

DC

1

1s

amb

100ms

= 25°C

100m

Drain Current (A)

-I

Single Pulse T

D

10m

One active die

0.1 1 10

10ms

1ms

100us

-VDS Drain-Source Voltage (V)

P-channel Safe Operating Area

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Two active die

One active die

Transient Thermal Impedance

Single Pulse T

= 25°C

100

10

amb

One active die

Derating Curve

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

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RAIN

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R

N

T

Electrical Characteristics N-CHANNEL @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage (Note 8) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

30

= 25°C unless otherwise specified

A

40 - - V

BV

DSS

- - 1.0

DSS

- - ±100 nA

I

GSS

0.8 1.3 1.8 V

V

GS(th

R

DS (ON)

|Y V

SD

-

|

fs

- 12.6 - S

- 0.7 1.0 V

20 33

C C C

R

Q Q Q

t

D(on)

t

D(off)

iss

oss

rss

t

s d

f

- 1790.8 -

- 160.6 -

- 120.5 -

- 1.03 -

- 37.56 -

- 7.8 -

- 6.6 -

8.08

-

15.14

-

24.29

-

5.27

-

30

25

V = 8.0V

GS

25

V = 5V

DS

(A) EN

20

V = 4.5V

GS

(A)

20

E

15

V = 4.0V

GS

AIN

10

D

I, D

V = 3.5V

GS

5

V = 3.0V

V = 2.5V

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typica l O ut put Chara ct er istic

DMC4050SSD

Document number: DS33310 Rev. 2 - 2

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DMC4050SSD

VGS = 0V, ID = 250μA

μA

VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 3A

45 60

- ns

V , GATE-SOURCE VOLT AGE (V)

GS

Fig. 2 Typical Transfer Characteristic

V

mΩ

GS

VGS = 4.5V, ID = 3A VDS = 5V, ID = 3A VGS = 0V, IS = 1A

pF pF pF

Ω nC nC nC

T = 125°C

A

= 20V, VGS = 0V,

V

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz V

= 10V, VDS = 20V,

GS

I

= 3A

D

V

= 10V, VDS = 20V,

GS

= 3A

I

D

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

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March 2011