Diodes DMC4040SSD User Manual

A

f

G

D

1S1G1D

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Product Summary

Device

Q1 40V

Q2 -40V

V

(BR)DSS

R

DS(on)

25mΩ @ V 40mΩ @ VGS= 4.5V 25mΩ @ V

45mΩ @ VGS= -4.5V

max

GS

= -10V

GS

= 10V

Description and Applications

This MOSFET has been designed to ensure that R channel FET are matched to minimize losses in both arms of the bridge. The DMC4040SSD is optimized for use in 3 phases brushless DC motor circuits (BLDC), CCFL backlighting.

NEW PRODUCT

• 3 phases BLDC motor

• CCFL backlighting

SO-8

G1

S2

2

Top View Top View

DS(on)

Product Line o

Diodes Incorporated

DMC4040SSD

40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features and Benefits

I

max (A)

D

TA = 25°C

(Notes 3 & 5)

7.5

6.2

-7.3

-5.7

of N and P

• Matched N & P R

• Fast switching – Minimizes switching losses

• Dual device – Reduces PCB area

• "Green" component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

- Minimizes power losses

DS(on)

D1S1

D1

D2

2

D2

Q1 N-Channel Q2 P-Channel

Equivalent Circuit

2

S2

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC4040SSD-13 C4040SD 13 12 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMC4040SSD

Document number: DS32120 Rev. 2 - 2

C4040SD

YY

WW

= Manufacturer’s Marking C4040SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53)

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DMC4040SSD

Maximum Ratings @T

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current Continuous Source Current (Body diode) (Notes 3 & 5) Pulsed Source Current (Body diode) (Notes 4 & 5)

Thermal Characteristics @T

NEW PRODUCT

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Notes 5 & 7) Operating and Storage Temperature Range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

DMC4040SSD

Document number: DS32120 Rev. 2 - 2

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

V

DSS

V

(Notes 3 & 5)

V

= 10V

GS

V

= 10V

GS

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

TA = 70°C (Notes 3 & 5) (Notes 2 & 5) 5.7 -5.7 (Notes 2 & 6) 6.8 -6.8 (Notes 4 & 5)

= 25°C unless otherwise specified

A

(Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5)

(Notes 2 & 5) (Notes 2 & 6) 70 (Notes 3 & 5) 58

GSS

IDM

I

SM

P

R

T

J, TSTG

ID

I

S

θJA

θJL

D

40 -40

±20 ±20

7.5 -7.5

5.8 -5.8

29.0 -29.0

3.0 -3.0

29.0 -29.0

1.25 10

1.8

14.3

2.14

17.2

100

51

-55 to +150 °C

V

A

W

mW/°C

°C/W

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Thermal Characteristics

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DMC4040SSD

NEW PRODUCT

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

I

10m

0.1 1 10

1s

100ms

Single Pulse T

= 25°C

amb

One active die

10ms

1ms

100us

VDS Drain-Source Voltage (V)

N-channe l Safe O p erating A rea

R(theta junction-to-ambient), R

100

One active die

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

θJA

Single Pulse

D=0.05

D=0.1

R

DS(ON)

Limited

10

DC

1

1s

amb

100ms

= 25°C

100m

Drain Current (A)

-I

Single Pulse T

D

10m

One active die

0.1 1 10

10ms

1ms

100us

-VDS Drain-Source Voltage (V)

P-channel Safe Operating Area

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Two active die

One active die

Transient Thermal Impedance

Single Pulse T

= 25°C

100

10

amb

One active die

Derating Curve

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

DMC4040SSD

Document number: DS32120 Rev. 2 - 2

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U

R

T

RAIN

CUR

R

N

T

Electrical Characteristics – Q1 N-CHANNEL @T

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9)

Diode Forward Voltage (Note 8)

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Rg

NEW PRODUCT

Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

Characteristic Symbol Min Typ Max Unit Test Condition

BV

V

R

DS (ON)

t

DSS

I

DSS

I

GSS

GS(th

g

⎯

fs

V

⎯

SD

C

⎯

iss

C

⎯

oss

C

⎯

rss

Q

⎯

Q

⎯

Q

⎯

s

Q

⎯

d

⎯

D(on

t

D(off

t

f

Diodes Incorporated

= 25°C unless otherwise specified

A

40

⎯ ⎯ ⎯ ⎯

0.8 1.3 1.8 V

⎯

⎯ ⎯ ⎯

⎯ ⎯

1.0

±100

0.013 0.025

0.028 0.040

12.6

⎯

0.7 1.0 V

1790

160 120

1.03

16.0

37.6

7.8

6.6

8.1

15.1

24.3

5.3

⎯ ⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯

Product Line o

V

ID = 250μA, VGS= 0V

μA

VDS= 40V, VGS= 0V

nA

V

= ±20V, VDS= 0V

GS

ID= 250μA, VDS= VGS V

= 10V, ID= 3A

V

S

VDS= 5V, ID= 3A IS= 1A, VGS= 0V

V f= 1MHz

V VGS= 4.5V

V

V I

D

GS

= 4.5V, ID= 3A

GS

= 20V, VGS= 0V

DS

= 0V, VGS= 0V, f= 1MHz

DS

= 10V

GS

= 20V, VGS= 10V

DD

= 3A

Ω

pF

Ω

nC

ns

DMC4040SSD

V

= 20V

DS

= 3A

I

D

Typical Characteristics – Q1 N-Channel

30

V = 8.0V

GS

V = 4.5V

GS

V = 4.0V

GS

(A) EN

25

20

15

AIN

10

D

I, D

V = 3.5V

GS

5

V = 3.0V

V = 2.5V

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typica l O ut put Chara ct er i stic

DMC4040SSD

Document number: DS32120 Rev. 2 - 2

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V = 5V

DS

25

(A)

20

E

15

10

D

I, D

5

0

012345

V , GATE-SOURCE VOLT AGE (V)

GS

Fig. 2 Typical Transfer Characteristic

T = 150°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

March 2011