Diodes DMC4029SSD User Manual

Y

W

DMC4029SSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

Device

Q2 40V

Q1 -40V

V

R

(BR)DSS

= 10V

GS

= -10V

GS

DS(on) max

24mΩ @ V
32mΩ @ VGS = 4.5V
45mΩ @ V

55mΩ @ VGS = -4.5V

D

TA = +25°C

9.0A

7.8A

-6.5A

-5.9A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

ADVANCE INFORMATION

• DC-DC Converters

NEW PRODUCT

• Power Management Functions

• Backlighting

Top View

S2

G2

S1

G1

TOP VIEW

Internal Schematic

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D2

D2

D2

G2

D1

D1

S2

N-Channel MOSFET

G

1

e3

D1

S1

P-Channel MOSFET

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMC4029SSD-13 Standard SO-8 2,500/Tape & Reel

DMC4029SSDQ-13 Automotive SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

Top View

8 5

C4029SD

Y W

1 4

www.diodes.com

1 of 8

Logo

Part no.

Xth week: 01 ~ 53

Year: “13” = 2013

March 2014

© Diodes Incorporated

)

g

g

)

r

)

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

DMC4029SSD

Characteristic Symbol Value_Q2 Value_Q1 Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 7) VGS = 10V

Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

40 -40 V

±20 ±20 V

7.0

5.6

9.0

7.2

-5.1

-4.1

-6.5

-5.2

A

A

2.5 -2.5 A
70 -40 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

NEW PRODUCT

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 59

= +25°C

T

A

TA = +70°C

Steady state

t<10s 43

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

1.3

0.8
98

1.8

1.1

W

°C/W

W

71

°C/W

11.8

-55 to +150 °C

Electrical Characteristics N-Channel Q2 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

40

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

1 µA

±100

nA

VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS(ON)

V

SD

1.0

⎯
⎯

⎯

⎯

15 24
20 32

0.7 1.0 V

3.0 V

VDS = VGS, ID = 250µA

V

mΩ

VGS = 4.5V, ID = 5A

VGS = 0V, IS = 1.0A

= 10V, ID = 6A

GS

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Total Gate Charge (VGS = 4.5V) Qg ⎯
Total Gate Charge (VGS = 10V) Qg ⎯
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Q

⎯

s

Q

⎯

d

t

D(on

t

t

D(off

t

f

t

r

Q

r

⎯
⎯
⎯

⎯

⎯

⎯

1060

84
58

1.6

8.8

19.1

3.0

2.5

5.3

7.1

15.1

4.8

10.5

4.15

⎯
⎯
⎯

pF

= 20V, VGS = 0V,

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯

⎯
⎯

nC

V

= 20V, ID = 8A

DS

⎯
⎯
⎯
⎯

nS

= 25V, RL = 2.5Ω

V

DD

= 10V, RG = 3Ω

V

GS

⎯

⎯

⎯

nS

IF = 8A, di/dt = 100A/μs

nC

IF = 8A, di/dt = 100A/μs

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

2 of 8

www.diodes.com

March 2014

© Diodes Incorporated

)

g

g

)

r

)

r

r

R

CUR

RENT

R

C

U

R

R

DMC4029SSD

Electrical Characteristics P-Channel Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-40

⎯ ⎯
⎯ ⎯

⎯ ⎯

-1 µA

±100

V

VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V

nA

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS(ON)

V

SD

-1.0

⎯
⎯
⎯

⎯

33 45
40 55

-0.7 -1.0 V

-3.0 V

VDS = VGS, ID = -250µA

V

mΩ

V

VGS = 0V, IS = -1.0A

= -10V, ID = -5A

GS

= -4.5V, ID = -4A

GS

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Total Gate Charge (VGS = -4.5V) Qg ⎯
Total Gate Charge (VGS = -10V) Qg ⎯
Gate-Source Charge

ADVANCE INFORMATION

Gate-Drain Charge

NEW PRODUCT

Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

t

⎯

r

Q

⎯

r

1154

84
66

12.6

10.6

21.5

2.2

3.3

8.7

19.6

34.9

25.5

9.61

3.3

⎯
⎯
⎯

pF

= -20V, VGS = 0V

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯

⎯
⎯

nC V

DS = -20V, ID = -4.9A

⎯
⎯
⎯
⎯

nS

DS = -20V, ID = -3.9A

V

GS = -4.5V, RG = 1Ω

V

⎯

⎯

⎯

nS

IS = -3.9A, dI/dt = 100A/μs

nC

IS = -3.9A, dI/dt = 100A/μs

N-Channel Q2

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

20.0

(A)

15.0

10.0

AIN

D

I, D

5.0

0.0

V = 10VGS

V= 5.0V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.5V

GS

V= 3.0V

GS

V= 2.5V

GS

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristic

3 of 8

www.diodes.com

V = 5.0VDS

ENT (A)

T = 150°C

A

AIN

I, D

D

T = 125°C

A

T = 85°C

T = 25°C

A

T = -55°C

A

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

A

March 2014

© Diodes Incorporated