Diodes DMC4029SSD User Manual

Y

W

DMC4029SSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

Device

Q2 40V

Q1 -40V

V

R

(BR)DSS

= 10V

GS

= -10V

GS

DS(on) max

24mΩ @ V 32mΩ @ VGS = 4.5V 45mΩ @ V

55mΩ @ VGS = -4.5V

D

TA = +25°C

9.0A

7.8A

-6.5A

-5.9A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

ADVANCE INFORMATION

• DC-DC Converters

NEW PRODUCT

• Power Management Functions

• Backlighting

Top View

S2

G2

S1

G1

TOP VIEW

Internal Schematic

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D2

G2

D1

S2

N-Channel MOSFET

G

1

e3

D1

S1

P-Channel MOSFET

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMC4029SSD-13 Standard SO-8 2,500/Tape & Reel

DMC4029SSDQ-13 Automotive SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

Top View

8 5

C4029SD

Y W

1 4

www.diodes.com

1 of 8

Logo

Part no.

Xth week: 01 ~ 53

Year: “13” = 2013

March 2014

)

g

)

r

)

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

DMC4029SSD

Characteristic Symbol Value_Q2 Value_Q1 Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 7) VGS = 10V

Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

40 -40 V

±20 ±20 V

7.0

5.6

9.0

7.2

-5.1

-4.1

-6.5

-5.2

A

2.5 -2.5 A 70 -40 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

NEW PRODUCT

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 59

= +25°C

T

A

TA = +70°C

Steady state

t<10s 43

P

R

P

R

T

J, TSTG

θJA

θJC

D

1.3

0.8 98

1.8

1.1

W

°C/W

W

71

°C/W

11.8

-55 to +150 °C

Electrical Characteristics N-Channel Q2 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

40

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

V

1 µA

±100

nA

VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS(ON)

V

SD

1.0

⎯ ⎯

⎯

15 24 20 32

0.7 1.0 V

3.0 V

VDS = VGS, ID = 250µA

V

mΩ

VGS = 4.5V, ID = 5A

VGS = 0V, IS = 1.0A

= 10V, ID = 6A

GS

DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Total Gate Charge (VGS = 4.5V) Qg ⎯ Total Gate Charge (VGS = 10V) Qg ⎯ Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

Q

⎯

s

Q

⎯

d

t

D(on

t

D(off

t

f

t

r

Q

r

⎯ ⎯ ⎯

⎯

1060

84 58

1.6

8.8

19.1

3.0

2.5

5.3

7.1

15.1

4.8

10.5

4.15

⎯ ⎯ ⎯

pF

= 20V, VGS = 0V,

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz ⎯

⎯ ⎯

nC

V

= 20V, ID = 8A

DS

⎯ ⎯ ⎯ ⎯

nS

= 25V, RL = 2.5Ω

V

DD

= 10V, RG = 3Ω

V

GS

⎯

nS

IF = 8A, di/dt = 100A/μs

nC

IF = 8A, di/dt = 100A/μs

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

2 of 8

www.diodes.com

March 2014

)

g

)

r

)

r

R

CUR

RENT

R

C

U

R

DMC4029SSD

Electrical Characteristics P-Channel Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-40

⎯ ⎯ ⎯ ⎯

⎯ ⎯

-1 µA

±100

V

VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V

nA

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS(ON)

V

SD

-1.0

⎯ ⎯ ⎯

⎯

33 45 40 55

-0.7 -1.0 V

-3.0 V

VDS = VGS, ID = -250µA

V

mΩ

V

VGS = 0V, IS = -1.0A

= -10V, ID = -5A

GS

= -4.5V, ID = -4A

GS

DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Total Gate Charge (VGS = -4.5V) Qg ⎯ Total Gate Charge (VGS = -10V) Qg ⎯ Gate-Source Charge

ADVANCE INFORMATION

Gate-Drain Charge

NEW PRODUCT

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

t

⎯

r

Q

⎯

r

1154

84 66

12.6

10.6

21.5

2.2

3.3

8.7

19.6

34.9

25.5

9.61

3.3

⎯ ⎯ ⎯

pF

= -20V, VGS = 0V

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz ⎯

⎯ ⎯

nC V

DS = -20V, ID = -4.9A

⎯ ⎯ ⎯ ⎯

nS

DS = -20V, ID = -3.9A

V

GS = -4.5V, RG = 1Ω

V

⎯

nS

IS = -3.9A, dI/dt = 100A/μs

nC

IS = -3.9A, dI/dt = 100A/μs

N-Channel Q2

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

20.0

(A)

15.0

10.0

AIN

D

I, D

5.0

0.0

V = 10VGS

V= 5.0V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.5V

GS

V= 3.0V

GS

V= 2.5V

GS

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristic

3 of 8

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V = 5.0VDS

ENT (A)

T = 150°C

A

AIN

I, D

D

T = 125°C

A

T = 85°C

T = 25°C

A

T = -55°C

A

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

A

March 2014

R

OUR

ON-R

R

OUR

CE ON-R

TANC

R

OUR

ON-R

R

RAIN-SOUR

C

R

N

O

URC

O

N-R

N

C

DMC4029SSD

Ω

ESISTANCE ( )

CE

0.024

0.022

0.02

0.018

0.016

0.014

V = 4.5VGS

V = 10VGS

Ω

E ( )

ESIS

0.2

0.18

0.16

0.14

0.12

0.1

0.08

I= 5.0A

D

0.06

0.012

AIN-S

, D

0.01

DS(ON)

0.008 0 5 10 15 20

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

ADVANCE INFORMATION

NEW PRODUCT

0.05

Ω

V = 4.5VGS

0.045

ESISTANCE ( )

CE

0.04

0.035

0.03

0.025

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

0.02

T = -55°C

0.015

AIN-S

0.01

, D

0.005

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

A

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

0.04

AIN-S

0.04

, D

0.02

DS(ON)

0

345678

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristic

2

V=V

10

GS

I= 10A

D

E

1.5

1

, D

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

3

V = 4.5V

GS

I= 5A

D

Ω

E ( )

0.035

V = 4.5V

GS

I= 5A

0.03

ESISTA

0.025

E

0.02

0.015

-S

AI

0.01

, D

0.005

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

D

V=V

10

GS

I= 10A

D

°

4 of 8

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2.8

2.6

2.4

2.2

I= 1mA

2

I = 250µA

D

1.8

1.6

1.4

1.2

GS(th)

V , GATE THRESHOLD VOLTAGE (V)

1

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 8 Gate Thr eshold Variation vs. Ambient Temperature

March 2014

OUR

CE C

U

R

T

RAN

N

HER

R

N

C

RAIN

CUR

R

N

T

DMC4029SSD

30

25

(A)

20

EN

S

I, S

15

10

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

5

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

1

ADVANCE INFORMATION

NEW PRODUCT

D = 0.9 D = 0.7

E

D = 0.5

D = 0.3

ESISTA

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

T T

0.01

D = 0.01

SIE

R (t) = r(t) * R

θθ

JA JA

R = 94°C/W

θ

JA

Duty Cycle, D = t1/ t2

r(t), T

D = 0.005

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec)

Figure 10 Transient Thermal Resistance

P-Channel Q1

30

25

(A)

20

E

15

V= -10V

GS

V= -5.0V

GS

V= -4.5V

GS

V= -4.0V

GS

V= -3.5V

GS

V= -3.0V

V = -5.0V

DS

GS

10

D

-I , D

5

0

012345

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

V= -2.5V

GS

V= -2.0V

GS

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5 of 8

T = 125CA°

T = 150CA°

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85CA°

T = 25CA°

T = -55CA°

Figure 2 Typical Transfer Characteristics

March 2014

R

OUR

O

R

OUR

ON-R

R, D

RAIN-SOUR

C

R

OUR

CE ON-R

TANC

G

T

THR

H

O

OLT

G

OUR

C

CUR

R

T

DMC4029SSD

0.2

Ω

0.18

V = -2.5V

GS

Ω

0.1

0.09

V= -4.5V

GS

0.16

0.14

ESISTANCE ( )

0.12

N-

0.1

CE

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

D

V = -4.5V

GS

V = -10V

GS

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

ADVANCE INFORMATION

NEW PRODUCT

2.0

V = -10V

GS

I = -10A

D

ESISTANCE ( )

0.07

0.06

CE

0.05

AIN-S

0.04

, D

0.03

DS(ON)

0.02 0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.08

Ω

E ( )

0.07

0.08

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

E

1.5

V = -4.5V

GS

I = -5A

D

1.0

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

ESIS

AIN-S

, D

0.06

0.05

0.04

0.03

0.02

-4.

V=5V

GS

-5

I= A

D

V= -10V

GS

I= A

-10

D

0.01

DS(on)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Figure 5 On-Resistance Variation with Temperature

2.0

°

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

30

1.8

E (V)

1.6

A

I=1mA

-

D

I = -250µA

D

LD V

ES

1.4

1.2

1.0

0.8

E

0.6

A

0.4

GS(TH)

0.2

V,

0

-50 -25 0 25 50 75 100 125 150

Figure 7 Gate Threshol d Variation vs. Ambient Temperature

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

T , AMBIENT TEMPERATURE (°C)

A

6 of 8

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25

(A)

20

EN

15

E

T= 25CA°

10

S

-I , S 5

0

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

March 2014

DMC4029SSD

D = 0.7

D = 0.5

D = 0.3

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

D = 0.9

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec)

Figure 9 Transient Thermal Resistance

ADVANCE INFORMATION

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Dim Min Max

e

b

D

E1

A2

E

A1

Detail ‘A’

h

°

45

A3

A

L

0.254 Gauge Plane

Seating Plane

7°~9

°

Detail ‘A’

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

X

C1

C2

Y

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

7 of 8

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March 2014

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

ADVANCE INFORMATION

final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMC4029SSD

Document number: DS36350 Rev. 3 - 2

8 of 8

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March 2014