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Features
• Low On-Resistance
• N-Channel: 32mΩ @ 10V
46mΩ @ 4.5V
• P-Channel: 39mΩ @ 10V
53mΩ @ 4.5V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Top View
G2
S1
G1
S2
Top View
DMC3032LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.072 grams (approximate)
SO-8
D2
G
D2
D1
D1
2
N-Channel MOSFET P-Channel MOSFET
D
2
S
2
G
1
D
1
S
1
Maximum Ratings N-CHANNEL – Q1 @T
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Maximum Ratings P-CHANNEL – Q2 @T
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
= 25°C unless otherwise specified
A
T
= 25°C
A
T
= 85°C
A
= 25°C unless otherwise specified
A
T
= 25°C
A
T
= 85°C
A
T
J
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V
DSS
V
GSS
I
D
I
DM
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
, T
STG
30 V
±20 V
8.1
5.1
A
25 A
-30 V
±20 V
-7.0
-4.5
A
-25 A
2.5 W
50 °C/W
-55 to +150 °C
May 2010
© Diodes Incorporated
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Electrical Characteristics N-CHANNEL – Q1 @T
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
NEW PRODUCT
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
20
Characteristic Symbol Min Typ Max Unit Test Condition
BV
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
= 25°C unless otherwise specified
A
30 - - V
DSS
fs
SD
iss
oss
rss
t
t
f
|
s
d
- - 1.0
- - ±100 nA
1 1.45 2.1 V
-
23 32
32 46
- 7.6 - S
- 0.7 1.0 V
- 404.5 -
- 51.8 -
- 45.1 -
- 1.5 -
- 9.2 -
- 1.2 -
- 1.8 -
3.4
-
6.18
-
13.92
-
2.84
-
20
VGS = 0V, ID = 250μA
μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, IC = 250μA
V
mΩ
GS
V
GS
VDS = 5V, IC = 7A
VGS = 0V, IS = 1A
pF
V
pF
pF
Ω
nC
nC
nC
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
GS
I
= 5.8A
D
- ns
- ns
- ns
V
GS
R
G
- ns
DMC3032LSD
= 10V, IC = 7A
= 4.5V, IC = 5.6A
= 15V, VGS = 0V,
= 10V, VDS = 15V,
= 10V, VDS = 15V,
= 3Ω, RL = 2.6Ω
V = 8.0V
16
(A)
GS
V = 4.5V
GS
12
V = 3.0V
GS
D
I, D
8
4
V = 2.5V
V = 2.0V
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
GS
Fig. 1 Typical Output Characteristics
16
(A)
12
AIN
D
I, D
V = 5V
DS
8
T = 150°C
A
T = 125°C
4
0
012 34
V , GATE SOURCE VOLT AGE (V)
GS
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
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NEW PRODUCT
DMC3032LSD
1
Ω
E ( )
Ω
E ( )
0.08
V = 4.5V
GS
T = 150°C
A
0.06
ESIS
V = 2.5V
GS
0.1
V = 4.5V
GS
AIN-S
, D
DS(ON)
0.01
0.1 1 10 100
I , DRAIN-SOURCE CURRENT (A)
D
V = 8.0V
GS
Fig. 3 Typical On-Resistance
vs. Drain C urrent and Gate Voltag e
1.7
1.5
ESIS
0.04
AIN-S
0.02
, D
DS(ON)
0
048121620
I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain C urrent an d Temperature
0.0
Ω
E ( )
0.06
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1.3
1.1
V = 4.5V
GS
I = 5.0A
D
0.9
DS(ON)
R , DRAIN-SOURCE
0.7
ON-RESISTANCE (NORMALIZED)
V = 10V
GS
I = 10A
D
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with T emperature
2.0
E (V)
1.6
I = 250µA
1.2
LD V
D
I = 1mA
D
ES
0.8
E
A
0.4
0.05
ESIS
V = 4.5V
0.04
GS
I = 5.0A
D
0.03
V = 10V
GS
I = 10A
0.02
AIN-S
, D
0.01
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
D
Fig. 6 On-Resistance Variation with Temperature
20
18
16
(A)
14
T = 25°C
A
12
10
E
8
6
S
I, S
4
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
2
0
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
3 of 8
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May 2010
© Diodes Incorporated