Features
• Low On-Resistance
• N-Channel: 32mΩ @ 10V
46mΩ @ 4.5V
• P-Channel: 39mΩ @ 10V
53mΩ @ 4.5V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Top View
G2
S1
G1
S2
Top View
DMC3032LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.072 grams (approximate)
SO-8
D2
G
D2
D1
D1
2
N-Channel MOSFET P-Channel MOSFET
D
2
S
2
G
1
D
1
S
1
Maximum Ratings N-CHANNEL – Q1 @T
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Maximum Ratings P-CHANNEL – Q2 @T
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
= 25°C unless otherwise specified
A
T
= 25°C
A
T
= 85°C
A
= 25°C unless otherwise specified
A
T
= 25°C
A
T
= 85°C
A
T
J
1 of 8
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V
DSS
V
GSS
I
D
I
DM
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
, T
STG
30 V
±20 V
8.1
5.1
A
25 A
-30 V
±20 V
-7.0
-4.5
A
-25 A
2.5 W
50 °C/W
-55 to +150 °C
May 2010
© Diodes Incorporated
)
g
g
g
g
r
RAIN C
U
R
REN
T
R
C
U
R
RENT
Electrical Characteristics N-CHANNEL – Q1 @T
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
NEW PRODUCT
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
20
Characteristic Symbol Min Typ Max Unit Test Condition
BV
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
= 25°C unless otherwise specified
A
30 - - V
DSS
fs
SD
iss
oss
rss
t
t
f
|
s
d
- - 1.0
- - ±100 nA
1 1.45 2.1 V
-
23 32
32 46
- 7.6 - S
- 0.7 1.0 V
- 404.5 -
- 51.8 -
- 45.1 -
- 1.5 -
- 9.2 -
- 1.2 -
- 1.8 -
3.4
-
6.18
-
13.92
-
2.84
-
20
VGS = 0V, ID = 250μA
μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, IC = 250μA
V
mΩ
GS
V
GS
VDS = 5V, IC = 7A
VGS = 0V, IS = 1A
pF
V
pF
pF
Ω
nC
nC
nC
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
GS
I
= 5.8A
D
- ns
- ns
- ns
V
GS
R
G
- ns
DMC3032LSD
= 10V, IC = 7A
= 4.5V, IC = 5.6A
= 15V, VGS = 0V,
= 10V, VDS = 15V,
= 10V, VDS = 15V,
= 3Ω, RL = 2.6Ω
V = 8.0V
16
(A)
GS
V = 4.5V
GS
12
V = 3.0V
GS
D
I, D
8
4
V = 2.5V
V = 2.0V
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
GS
Fig. 1 Typical Output Characteristics
16
(A)
12
AIN
D
I, D
V = 5V
DS
8
T = 150°C
A
T = 125°C
4
0
012 34
V , GATE SOURCE VOLT AGE (V)
GS
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
2 of 8
www.diodes.com
May 2010
© Diodes Incorporated
R
R
OUR
CE ON-R
TANC
R
R
OUR
CE ON-R
TANC
7
R
R
OUR
CE ON-R
TANC
G
T
THR
H
O
OLTAG
OUR
C
CUR
REN
T
NEW PRODUCT
DMC3032LSD
1
Ω
E ( )
Ω
E ( )
0.08
V = 4.5V
GS
T = 150°C
A
0.06
ESIS
V = 2.5V
GS
0.1
V = 4.5V
GS
AIN-S
, D
DS(ON)
0.01
0.1 1 10 100
I , DRAIN-SOURCE CURRENT (A)
D
V = 8.0V
GS
Fig. 3 Typical On-Resistance
vs. Drain C urrent and Gate Voltag e
1.7
1.5
ESIS
0.04
AIN-S
0.02
, D
DS(ON)
0
048121620
I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain C urrent an d Temperature
0.0
Ω
E ( )
0.06
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1.3
1.1
V = 4.5V
GS
I = 5.0A
D
0.9
DS(ON)
R , DRAIN-SOURCE
0.7
ON-RESISTANCE (NORMALIZED)
V = 10V
GS
I = 10A
D
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with T emperature
2.0
E (V)
1.6
I = 250µA
1.2
LD V
D
I = 1mA
D
ES
0.8
E
A
0.4
0.05
ESIS
V = 4.5V
0.04
GS
I = 5.0A
D
0.03
V = 10V
GS
I = 10A
0.02
AIN-S
, D
0.01
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
D
Fig. 6 On-Resistance Variation with Temperature
20
18
16
(A)
14
T = 25°C
A
12
10
E
8
6
S
I, S
4
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
2
0
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
3 of 8
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May 2010
© Diodes Incorporated
C, CAPACITAN
C
F
R
OUR
C
G
CUR
R
T
)
g
g
g
g
g
r
NEW PRODUCT
DMC3032LSD
1,000
f = 1MHz
10,000
(nA )
EN
C
)
iss
E (p
100
C
oss
C
rss
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Capacitance
1,000
T = 150°C
A
E
T = 125°C
100
A
E LEAKA
10
AIN-S
DSS
1
I, D
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 85°C
A
Fig. 10 Typical Drain-Source Leakage Current
T = 25°C
A
T = -55°C
A
vs. Drain-Source Voltage
Electrical Characteristics P-CHANNEL
= 25°C unless otherwise specified
@TA
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-30 - - V
- - -1.0
- - ±100 nA
VGS = 0V, ID = -250μA
μA
= -30V, VGS = 0V
V
DS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
|Y
V
fs
SD
-1 -1.7 -2.2 V
-
|
- 7 - S
- -0.75 -1.0 V
30 39
42 53
VDS = VGS, ID = -250μA
= -10V, ID = -4.3A
V
mΩ
GS
V
= -4.5V, ID = -3.7A
GS
VDS = -5V, ID = -4.3A
VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
C
C
C
R
Q
Q
Q
Q
t
D(on)
t
D(off)
oss
rss
t
t
iss
s
d
f
- 1002 -
- 125 -
- 118 -
- 13 -
- 10.1 -
- 21.1 -
- 2.8 -
- 3.2 -
10.1
-
6.5
-
50.1
-
22.2
-
pF
V
pF
pF
Ω
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
V
GS
I
nC
= -6A
D
nC
- ns
- ns
- ns
V
GS
R
G
- ns
= -15V, VGS = 0V,
= -4.5V/-10V, VDS = -15V,
= -10V, VDS = -15V,
= 6Ω , ID = -1A
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
4 of 8
www.diodes.com
May 2010
© Diodes Incorporated
RAIN CUR
REN
T
R
C
URR
T
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
CE ON-R
TANC
R
R
OUR
CE ON-R
TANC
NEW PRODUCT
DMC3032LSD
20
15
(A)
V = 10V
GS
V = 4.5V
GS
V = 4.0V
GS
V = 3.5V
GS
20
V = 5V
DS
15
(A)
EN
10
10
AIN
V = 3.0V
D
I, D
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 Typica l Out put Chara c t eristics
0.10
Ω
E ( )
0.08
ESIS
0.06
GS
V = 2.5V
GS
D
I, D
5
0
0123456
T = 150°C
A
T = 125°C
A
T = 85°C
A
V , GATE SOURCE VOLTAGE (V)
GS
T = 25°C
A
T = -55°C
A
Fig. 12 Typical Transfer Characteristics
0.10
Ω
E ( )
V = 10V
GS
0.08
T = 150°C
A
ESIS
T = 125°C
0.06
A
T = 85°C
A
T = 25°C
V = 4.5V
GS
V = 10V
GS
, D
0.04
0.02
DS(ON)
0
0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 13 Typical On-Resistance
vs. Drain C urrent and G ate V oltage
1.7
1.5
0.04
AIN-S
0.02
, D
DS(ON)
0
0 5 10 15 20
I , DRAIN CURRENT (A)
D
Fig. 14 Typical Drain-Source On-Resistance
vs. Drain C ur r ent and Temperatu r e
0.08
Ω
E ( )
0.07
A
T = -55°C
A
0.06
1.3
1.1
V = 10V
GS
I = 10A
D
0.9
DS(ON)
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V = 4.5V
0.7
0.5
GS
I = 5A
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 15 On-Resistance Variation with Temperature
ESIS
0.05
0.04
0.03
AIN-S
0.02
, D
0.01
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
Fig. 16 On-Resistance Variation with Temperature
V = 4.5V
GS
I = 5A
D
V = 10V
GS
I = 10A
D
T , JUNCTION TEMPERATURE (°C)
J
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
5 of 8
www.diodes.com
May 2010
© Diodes Incorporated
OUR
CE CUR
REN
T
C, CAPACITAN
C
F
R
OUR
C
GE CUR
RENT
NEW PRODUCT
2.5
2.0
1.5
I = 250µA
I = 1mA
D
D
1.0
0.5
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 17 Gate Threshold Variation vs. Ambient Temperature
10,000
)
1,000
E (p
C
iss
f = 1MHz
DMC3032LSD
20
16
(A)
12
8
S
I, S
4
0
0.4 0.6 0.8 1.0 1.2 1.4
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 18 Diode Forward Voltage vs. Current
10,000
(nA)
1,000
T = 25°C
A
T = 150°C
A
T = 125°C
A
100
100
C
oss
C
rss
E LEAKA
T = 85°C
A
10
AIN-S
T = 25°C
A
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 19 Typical Capacitance
DSS
1
I, D
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 20 Typical Drain-Source Leakage Current
vs. Drain-S ource Volta ge
Ordering Information (Note 7)
Part Number Case Packaging
DMC3032LSD-13 SO-8 2500/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
8 5
C3032LD
WW
YY
1 4
Top View
www.diodes.com
6 of 8
Logo
Part no.
Xth week: 01 ~ 53
Year: “10” = 2010
May 2010
© Diodes Incorporated
Package Outline Dimensions
NEW PRODUCT
e
b
D
Suggested Pad Layout
DMC3032LSD
E1
A2
E
A1
Detail ‘A’
h
°
45
A3
A
X
L
0.254
Gaug e Plan e
Seating Plane
7°~9
°
Detail ‘A’
Dimensions Value (in mm)
X 0.60
Dim Min Max
C1
Y 1.55
C1 5.4
C2
Y
C2 1.27
SO-8
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0° 8°
θ
All Dimensions in mm
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
7 of 8
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May 2010
© Diodes Incorporated
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
NEW PRODUCT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMC3032LSD
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
8 of 8
www.diodes.com
May 2010
© Diodes Incorporated
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