Diodes DMC3032LSD User Manual

Features

• Low On-Resistance

• N-Channel: 32mΩ @ 10V

46mΩ @ 4.5V

• P-Channel: 39mΩ @ 10V
53mΩ @ 4.5V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

Top View

G2
S1
G1

S2

Top View

DMC3032LSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.072 grams (approximate)

SO-8

D2

G

D2
D1
D1

2

N-Channel MOSFET P-Channel MOSFET

D

2

S

2

G

1

D

1

S

1

Maximum Ratings N-CHANNEL – Q1 @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3)

Steady

State

Pulsed Drain Current (Note 4)

Maximum Ratings P-CHANNEL – Q2 @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3)

Steady

State

Pulsed Drain Current (Note 4)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMC3032LSD

Document number: DS32153 Rev. 1 - 2

= 25°C unless otherwise specified

A

T

= 25°C

A

T

= 85°C

A

= 25°C unless otherwise specified

A

T

= 25°C

A

T

= 85°C

A

T

J

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V

DSS

V

GSS

I

D

I

DM

V

DSS

V

GSS

I

D

I

DM

P

D

R

θJA

, T

STG

30 V

±20 V

8.1

5.1

A

25 A

-30 V

±20 V

-7.0

-4.5

A

-25 A

2.5 W
50 °C/W

-55 to +150 °C

May 2010

© Diodes Incorporated

)

g

g

g

g

r

RAIN C

U

R

REN

T

R

C

U

R

RENT

Electrical Characteristics N-CHANNEL – Q1 @T

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

NEW PRODUCT

Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

20

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

= 25°C unless otherwise specified

A

30 - - V

DSS

fs

SD

iss
oss
rss

t

t

f

|

s
d

- - 1.0

- - ±100 nA

1 1.45 2.1 V

-

23 32
32 46

- 7.6 - S

- 0.7 1.0 V

- 404.5 -

- 51.8 -

- 45.1 -

- 1.5 -

- 9.2 -

- 1.2 -

- 1.8 -

3.4

-

6.18

-

13.92

-

2.84

-

20

VGS = 0V, ID = 250μA

μA

VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, IC = 250μA
V

mΩ

GS

V

GS

VDS = 5V, IC = 7A
VGS = 0V, IS = 1A

pF

V

pF
pF

Ω
nC
nC
nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

GS

I

= 5.8A

D

- ns

- ns

- ns

V

GS

R

G

- ns

DMC3032LSD

= 10V, IC = 7A
= 4.5V, IC = 5.6A

= 15V, VGS = 0V,

= 10V, VDS = 15V,

= 10V, VDS = 15V,

= 3Ω, RL = 2.6Ω

V = 8.0V

16

(A)

GS

V = 4.5V

GS

12

V = 3.0V

GS

D

I, D

8

4

V = 2.5V

V = 2.0V

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

GS

Fig. 1 Typical Output Characteristics

16

(A)

12

AIN

D

I, D

V = 5V

DS

8

T = 150°C

A

T = 125°C

4

0

012 34

V , GATE SOURCE VOLT AGE (V)

GS

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

DMC3032LSD

Document number: DS32153 Rev. 1 - 2

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R

R

OUR

CE ON-R

TANC

R

R

OUR

CE ON-R

TANC

7

R

R

OUR

CE ON-R

TANC

G

T

THR

H

O

OLTAG

OUR

C

CUR

REN

T

NEW PRODUCT

DMC3032LSD

1

Ω

E ( )

Ω

E ( )

0.08

V = 4.5V

GS

T = 150°C

A

0.06

ESIS

V = 2.5V

GS

0.1

V = 4.5V

GS

AIN-S
, D

DS(ON)

0.01

0.1 1 10 100
I , DRAIN-SOURCE CURRENT (A)

D

V = 8.0V

GS

Fig. 3 Typical On-Resistance

vs. Drain C urrent and Gate Voltag e

1.7

1.5

ESIS

0.04

AIN-S

0.02

, D

DS(ON)

0

048121620

I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain C urrent an d Temperature

0.0

Ω

E ( )

0.06

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

1.3

1.1

V = 4.5V

GS

I = 5.0A

D

0.9

DS(ON)

R , DRAIN-SOURCE

0.7

ON-RESISTANCE (NORMALIZED)

V = 10V

GS

I = 10A

D

0.5

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with T emperature

2.0

E (V)

1.6

I = 250µA

1.2

LD V

D

I = 1mA

D

ES

0.8

E
A

0.4

0.05

ESIS

V = 4.5V

0.04

GS

I = 5.0A

D

0.03

V = 10V

GS

I = 10A

0.02

AIN-S
, D

0.01

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

D

Fig. 6 On-Resistance Variation with Temperature
20
18
16

(A)

14

T = 25°C

A

12
10

E

8
6

S

I, S

4

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

2
0

0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

DMC3032LSD

Document number: DS32153 Rev. 1 - 2

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