Diodes DMC3028LSD User Manual

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30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET
Product Summary
I
Device
Q1 30V
Q2 -30V
V
(BR)DSS
R
41mΩ @ VGS= -4.5V
DS(on)
28mΩ @ V 45mΩ @ VGS= 4.5V 25mΩ @ V
GS
= -10V
GS
= 10V
T
= 25°C
A
7.1A
5.6A
-7.4A
-5.7A
D
Description and Applications
This new generation complementary dual MOSFET features low on­resistance and fast switching, making it ideal for high efficiency power management applications.
Motor control
Backlighting
DC-DC Converters
Power management functions
TOP VIEW
G1
S2
G2
Top view
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DMC3028LSD
Features and Benefits
Low on-resistance
Fast switching speed
“Green” Component and RoHS Compliant (Note 1)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D1S1
D1
D2
D2
D1
G1
G2
S1
Q1 N-Channel Q2 P-Channel
D2
S2
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMC3028LSD-13 C3028LD 13 12 2,500
Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website
Marking Information
DMC3028LSD
Document Revision: 4
C3028LD
YY
WW
= Manufacturer’s Marking C3028LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)
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DMC3028LSD
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
V
= 10V
GS
V
DSS
V
GSS
(Notes 3 & 5) TA = 70°C (Notes 3 & 5) (Notes 2 & 5) 5.5 -5.8
ID
30 -30 V
±20 ±20
V
7.1 -7.4
5.7 -5.9 A
(Notes 2 & 6) 6.6 -6.8
Pulsed Drain Current
V
= 10V
GS
Continuous Source Current (Body diode) (Notes 3 & 5) Pulsed Source Current (Body diode) (Notes 4 & 5)
(Notes 4 & 5)
IDM
I
S
I
SM
34 -36 A
3.5 -3.5
34 -36
A A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation Linear Derating Factor
Power Dissipation Linear Derating Factor
Power Dissipation Linear Derating Factor
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
P
D
P
D
P
D
(Notes 2 & 5)
Thermal Resistance, Junction to Ambient
(Notes 2 & 6)
R
θJA
(Notes 3 & 5) Thermal Resistance, Junction to Lead (Notes 5 & 7) Operating and Storage Temperature Range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
R
T
J, TSTG
θJL
51 46 °C/W
1.3 10
1.8 14
2.1 17
100
70 60
-55 to +150 °C
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
DMC3028LSD
Document Revision: 4
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R
DS(ON)
Limited
10
DC
1
100m
Drain Current (A)
D
10m
I
0.1 1 10
1s
100ms
Notes 2 & 5
Single Pulse, T
amb
10ms
=25°C
1ms
100us
VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
100
80
D=0.5
60
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
R
DS(ON)
Limited
10
DC
1
100m
Drain Current (A)
D
10m
-I
0.1 1 10
1s
100ms
Notes 2 & 5
Single Pulse, T
amb
10ms
=25°C
1ms
100us
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
2.0
1.5
1.0
0.5
0.0 0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Two active die
One active die
Derating Curve
Single Pulse T
100
10
amb
=25°C
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
DMC3028LSD
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Electrical Characteristics – Q1 N-Channel @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
I
DSS DSS GSS
30
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8) Reverse recovery time (Note 9) Reverse recovery charge (Note 9)
V
GS(th)
R
DS (ON)
V
g
fs
SD
t
rr
Q
rr
1.0
⎯ ⎯
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge Total Gate Charge
Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)
Notes: 8. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
C
C
C
Q Q
t
D(on)
t
D(off)
iss
oss
rss
Q
g
Q
g gs gd
t
r
t
f
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.5
V
μA
±100 nA
12
3.0 V
0.028
0.045
S
0.68 1.2 V
11.5
4.4
472 178
65
5.2
10.5
1.86
2.3
2.5
3.1 14
9.7
⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
ns
nC
pF pF pF
nC nC
nC nC
ns ns ns ns
ID = 250μA, VGS= 0V VDS= 30V, VGS= 0V VGS= ±20V, VDS= 0V
ID= 250μA, VDS= VGS
= 10V, ID= 6.0A
V
GS
V
= 4.5V, ID= 4.9A
GS
VDS= 15V, ID= 6.0A I
= 1.7A, VGS= 0V
S
= 1.7A, di/dt= 100A/μs
I
S
= 15V, VGS= 0V
V
DS
f= 1MHz
V
= 15V, VGS= 4.5V
DS
= 6A
I
D
V
= 15V, VGS= 10V
DS
= 6A
I
D
V
= 15V, VGS= 10V
DD
= 1A, RG ≅ 6.0Ω
I
D
DMC3028LSD
Document Revision: 4
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