Diodes DMC3028LSD User Manual

A

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30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET

Product Summary

I

Device

Q1 30V

Q2 -30V

V

(BR)DSS

R

41mΩ @ VGS= -4.5V

DS(on)

28mΩ @ V
45mΩ @ VGS= 4.5V
25mΩ @ V

GS

= -10V

GS

= 10V

T

= 25°C

A

7.1A

5.6A

-7.4A

-5.7A

D

Description and Applications

This new generation complementary dual MOSFET features low on­resistance and fast switching, making it ideal for high efficiency power
management applications.

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

TOP VIEW

G1

S2

G2

Top view

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DMC3028LSD

Features and Benefits

• Low on-resistance

• Fast switching speed

• “Green” Component and RoHS Compliant (Note 1)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1S1

D1

D2

D2

D1

G1

G2

S1

Q1 N-Channel Q2 P-Channel

D2

S2

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC3028LSD-13 C3028LD 13 12 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website

Marking Information

DMC3028LSD

Document Revision: 4

C3028LD

YY

WW

= Manufacturer’s Marking
C3028LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

V

= 10V

GS

V

DSS

V

GSS

(Notes 3 & 5)
TA = 70°C (Notes 3 & 5)
(Notes 2 & 5) 5.5 -5.8

ID

30 -30 V

±20 ±20

V

7.1 -7.4

5.7 -5.9
A

(Notes 2 & 6) 6.6 -6.8

Pulsed Drain Current

V

= 10V

GS

Continuous Source Current (Body diode) (Notes 3 & 5)
Pulsed Source Current (Body diode) (Notes 4 & 5)

(Notes 4 & 5)

IDM

I

S

I

SM

34 -36 A

3.5 -3.5

34 -36

A
A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

Power Dissipation
Linear Derating Factor

Power Dissipation
Linear Derating Factor

Power Dissipation
Linear Derating Factor

(Notes 2 & 5)

(Notes 2 & 6)

(Notes 3 & 5)

P

D

P

D

P

D

(Notes 2 & 5)

Thermal Resistance, Junction to Ambient

(Notes 2 & 6)

R

θJA

(Notes 3 & 5)
Thermal Resistance, Junction to Lead (Notes 5 & 7)
Operating and Storage Temperature Range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

R

T

J, TSTG

θJL

51 46 °C/W

1.3
10

1.8
14

2.1
17

100

70
60

-55 to +150 °C

W

mW/°C

W

mW/°C

W

mW/°C

°C/W

DMC3028LSD

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R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

I

0.1 1 10

1s

100ms

Notes 2 & 5

Single Pulse, T

amb

10ms

=25°C

1ms

100us

VDS Drain-Source Voltage (V)

N-channel Safe Operating Area

100

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

-I

0.1 1 10

1s

100ms

Notes 2 & 5

Single Pulse, T

amb

10ms

=25°C

1ms

100us

-VDS Drain-Source Voltage (V)

P-channel Safe Operating Area

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Two active die

One active die

Derating Curve

Single Pulse
T

100

10

amb

=25°C

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

DMC3028LSD

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Electrical Characteristics – Q1 N-Channel @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

DSS
DSS
GSS

30

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)

Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)

V

GS(th)

R

DS (ON)

V

g

fs

SD

t

rr

Q

rr

1.0

⎯ ⎯

⎯
⎯

⎯

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

C

C

C

Q
Q

t

D(on)

t

D(off)

iss

oss

rss

Q

g

Q

g
gs
gd

t

r

t

f

⎯

⎯
⎯

⎯
⎯

⎯
⎯

⎯
⎯

⎯

⎯

⎯ ⎯

0.5

V

μA

±100 nA

⎯

12

3.0 V

0.028

0.045
⎯

Ω
S

0.68 1.2 V

11.5

4.4

472
178

65

5.2

10.5

1.86

2.3

2.5

3.1
14

9.7

⎯
⎯

⎯
⎯
⎯

⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯

ns

nC

pF
pF
pF

nC
nC

nC
nC

ns
ns
ns
ns

ID = 250μA, VGS= 0V
VDS= 30V, VGS= 0V
VGS= ±20V, VDS= 0V

ID= 250μA, VDS= VGS

= 10V, ID= 6.0A

V

GS

V

= 4.5V, ID= 4.9A

GS

VDS= 15V, ID= 6.0A
I

= 1.7A, VGS= 0V

S

= 1.7A, di/dt= 100A/μs

I

S

= 15V, VGS= 0V

V

DS

f= 1MHz

V

= 15V, VGS= 4.5V

DS

= 6A

I

D

V

= 15V, VGS= 10V

DS

= 6A

I

D

V

= 15V, VGS= 10V

DD

= 1A, RG ≅ 6.0Ω

I

D

DMC3028LSD

Document Revision: 4

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Q1 N-Channel

10

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DMC3028LSD

5V

10V

1

4.5V
4V

3.5V

3V

10

1

T = 150°C

10V

4.5V

4V

3.5V
3V

2.5V

0.1

Drain Current (A)

D

I

0.01

0.1 1 10

T = 25°C

2.5V
V

GS

VDS Drain-Source Voltage (V)

Output C haracteristics

10

VDS = 10V

T = 150°C

1

T = 25°C

Drain Current (A)

D

I

0.1
234

VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

1000

100

10

0.1

0.01

Drain-Source On-Resistance (W)

DS(on)

R

On-Resistan ce v Drain Current

2.5V

1

0.01 0.1 1 10

T = 25°C

3V

3.5V

ID Drain Current (A)

V

GS

4V

4.5V

10V

0.1

Drain Current (A)

D

I

0.01

0.1 1 10

VDS Drain-Source Voltage (V)

Output Characteristics

1.6

1.4

GS(th)

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

Normalised R

-50 0 50 100 150

Tj Junction Temperature (°C)

VGS = 10V
ID = 6A

VGS = V
ID = 250uA

DS

Normalised Cu rves v Temperature

10

1

T = 150°C

0.1

0.01

Reverse Drain Current (A)

1E-3

SD

I

0.2 0.4 0.6 0.8

Source - D rain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

T = 25°C

Vgs = -3V

2V

V

GS

R

DS(on)

V

GS(th)

DMC3028LSD

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Q1 N-Channel continued

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DMC3028LSD

700
600
500
400

C

300

OSS

200
100

C Capacitance (pF)

0

C

RSS

110

VDS - Drain - Source Voltage (V)

Capacitance v Drain-Source Voltage

Test Circuits – Q1 N-Channel

Q

G

Q

V

G

GS

Q

GD

VGS = 0V
f = 1MHz

C

ISS

10

ID = 6A

9
8
7
6
5
4
3
2
1

Gate-Source Voltage (V)

GS

0

V

01234567891011

VDS = 15V

Q - Charge (nC)

Gate-Source Voltage v Gate Charge

Current

regulator

12V

50k

I

G

V

GS

Sameas

D.U. T

D.U. T

V

DS

I

D

Charge

Gate charge test circuit

R

D

V

GS

R

G

Switching time test circuit

V

DS

V

DD

V

90%

10%

V

Basicgatechargewaveform

DS

GS

t

d(on)tr

t

t

d(off)

(on)

t

r

t

(on)

Switching time waveforms

DMC3028LSD

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DMC3028LSD

Electrical Characteristics – Q2 P-Channel @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

-30

BV

DSS

⎯ ⎯

I

DSS

I

⎯ ⎯

GSS

⎯ ⎯

-0.5

±100 nA

V

ID = -250μA, VGS= 0V

μA

VDS= -30V, VGS= 0V
VGS= ±20V, VDS= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)

Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)

V

GS(th)

R

⎯ ⎯

DS (ON)

g

fs

V

SD

t

rr

Q

rr

-1.0

⎯
⎯

⎯

⎯

18.6

-0.80 -1.2 V

16.2
10

-3.0 V

0.025

0.041

⎯

⎯
⎯

Ω
S

ns

nC

ID= -250μA, VDS= VGS
V

= -10V, ID= -7.1A

GS

V

= -4.5V, ID= -5.5A

GS

VDS= -15V, ID= -7.1A
IS= -1.7A, VGS= 0V

= -2.2A, di/dt= 100A/μs

I

S

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

C

C

C

Q
Q

t

D(on)

t

D(off)

iss

oss

rss

Q

g

Q

g
gs
gd

t

r

t

f

⎯

⎯

⎯
⎯
⎯

⎯

⎯

⎯
⎯

⎯

⎯

1678

303
178

16.4

31.6

4.3

6.2

3.5

4.9
44
28

⎯
⎯
⎯

⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

nC
nC

nC
nC

ns
ns
ns
ns

= -15V, VGS= 0V

V

DS

f= 1MHz

V

= -15V, VGS= -4.5V

DS

= -7.1A

I

D

V

= -15V, VGS= -10V

DS

= -7.1A

I

D

V

= -15V, VGS= -10V

DD

= -1A, RG ≅ 6.0Ω

I

D

DMC3028LSD

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Q2 P-Channel

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DMC3028LSD

10V

4.5V

10

1

Drain Current (A)

D

-I

0.1

0.1 1 10

T = 25°C

-VDS Drain-Source Voltage (V)

Output C h aracteristics

10

VDS = 10V

T = 150°C

1

T = 25°C

Drain Current (A)

D

-I

0.1
23

-VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

3.5V
3V

2.5V

T = 150°C

10

1

0.1

Drain Current (A)

V

GS

D

-I

0.01

0.1 1 10

10V

-VDS Drain-Source Voltage (V)

Output C h aracteristics

1.6

1.4

GS(th)

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

Normalised R

-50 0 50 100 150

Tj Junction Temperature (°C)

Normalised Curves v Temperature

3.5V

VGS = 10V
ID = 7.1A

VGS = V
ID = 250uA

3V

2.5V

2V

V

GS

R

DS(on)

DS

V

GS(th)

10

1

0.1

0.01

0.1 1 10

Drain-Source On-Resistance (Ω)

DS(on)

On-Resistance v D rain Cu rrent

R

2.5V

-ID Drain Current (A)

T = 25°C

3V

3.5V

4V

10V

V

GS

10

T = 150°C

1

0.1

0.01

Reverse Drain Current (A)

1E-3

SD

0.2 0.4 0.6 0.8 1.0

-I

-V

Source-Dra in Voltage (V)

SD

T = 25°C

Vgs = 0V

Source-Drain Diode Forward Voltage

DMC3028LSD

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C

Q2 P-Channel continued

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DMC3028LSD

2500

2000

C

1500

ISS

1000

500

C Capacitance (pF)

0

110

-VDS - Drain - Source Voltage (V)

Capacitance v Drain-Source Voltage

Test Circuits – Q2 P-Channel

Q

G

Q

V

G

GS

Q

GD

VGS = 0V
f = 1MHz

9
8

ID = 7.1A

7
6

10

C

OSS

C

RSS

5
4
3
2
1

Gate-Source Voltage (V)

GS

0

-V

0 5 10 15 20 25 30 35

VDS = 15V

Q - Charge (nC)

Gate-Source Voltage v Gate Charge

urrent

regulator

12V

0.2␮F

50k

I

G

Sameas

D.U.T

V

DS

D.U. T

I

V

GS

D

Charge

Basicgatechargewaveform

t

trt

t

(on)

d(off)

t

d(on)

r

t

(on)

Switching time waveforms

V

90%

10%

V

DS

GS

Gate charge test circuit

R

D

V

R

G

Pulse width ⬍1␮S
Duty factor 0.1%

GS

V

Switching time test circuit

DS

V

DD

DMC3028LSD

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0

Package Outline Dimensions

DIM Inches Millimeters DIM Inches Millimeters

Min. Max. Min. Max. Min. Max. Min.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27 - - - - -

Suggested Pad Layout

0.275

0.6
.024

7.0

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Diodes Incorporated

DMC3028LSD

hx45°

Max.

θ

0° 8° 0° 8°

1.52

0.060

4.0

0.155

1.27

0.050

mm

inches

DMC3028LSD

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

Diodes Incorporated

DMC3028LSD

DMC3028LSD

Document Revision: 4

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