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30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET
Product Summary
I
Device
Q1 30V
Q2 -30V
V
(BR)DSS
R
41mΩ @ VGS= -4.5V
DS(on)
28mΩ @ V
45mΩ @ VGS= 4.5V
25mΩ @ V
GS
= -10V
GS
= 10V
T
= 25°C
A
7.1A
5.6A
-7.4A
-5.7A
D
Description and Applications
This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power
management applications.
• Motor control
• Backlighting
• DC-DC Converters
• Power management functions
TOP VIEW
G1
S2
G2
Top view
Product Line o
Diodes Incorporated
DMC3028LSD
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” Component and RoHS Compliant (Note 1)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Continuous Source Current (Body diode) (Notes 3 & 5)
Pulsed Source Current (Body diode) (Notes 4 & 5)
(Notes 4 & 5)
IDM
I
S
I
SM
34 -36 A
3.5 -3.5
34 -36
A
A
Thermal Characteristics@T
= 25°C unless otherwise specified
A
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
P
D
P
D
P
D
(Notes 2 & 5)
Thermal Resistance, Junction to Ambient
(Notes 2 & 6)
R
θJA
(Notes 3 & 5)
Thermal Resistance, Junction to Lead (Notes 5 & 7)
Operating and Storage Temperature Range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V
GS(th)
R
DS (ON)
V
g
fs
SD
t
rr
Q
rr
1.0
⎯⎯
⎯
⎯
⎯
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)