Diodes DMC3025LSD User Manual

Product Summary

Device V

N-Channel 30V

P-Channel -30V

R

(BR)DSS

20m @ V
32m @ VGS = 4.5V
45m @ V

85m @ VGS = -4.5V

DS(ON) max

GS

GS

Package

= 10V

= -10V

SO-8

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• DC Motor Control

• DC-AC Inverters

ADVANCED INFORMATION

SO-8

Top View

S2

G2
S1
G1

Pin Configuration

I

D MAX

TA = +25°C

8.5A

7.0A

-5.5A

-4.1A

DMC3025LSD

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

D2

D2

D2

G2

D1
D1

S2

N-CHANNEL MOSFET P-CHANNEL MOSFET

Equivalent Circuit

G1

e3

D1

S1

Ordering Information (Note 4)

Part Number Case Packaging

DMC3025LSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

Top View

8 5

C3025LD

WW

YY

1 4

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Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

August 2012

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θ

Maximum Ratings N-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Ratings P-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage

ADVANCED INFORMATION

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

T

Steady

State
t<10s

Steady

State
t<10s

= +25°C, unless otherwise specified.)

A

Steady

State
t<10s

Steady

State
t<10s

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

D

I

D

I

S

I

DM

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

DMC3025LSD

30 V

±20 V

6.5

5.1

8.5

6.8

5.3

4.1

7.0

5.5
2 A

60 A

-30 V

±20 V

-4.2

-3.2

-5.5

-4.3

-3.5

-2.3

-4.1

-3.2

-2 A

-30 A

A

A

A

A

A

A

A

A

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

A

TA = +70°C

Steady State

t<10s 62

T

= +25°C

A

TA = +70°C

Steady State

t<10s 49

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

2 of 9

www.diodes.com

1.2

0.77
104

1.5

0.95

W

°C/W

W

83

°C/W

15

-55 to +150 °C

August 2012

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

)

g

g

g

)

r

)

r

r

Electrical Characteristics N-CHANNEL (@T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time

ADVANCED INFORMATION

Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

BV

I
I

V

GS(th

R

DS (ON)

|Y
V

C
C
C

DSS
DSS
GSS

fs

SD

iss

oss

rss

R

30 — — V
— — 1 A
— — ±1 A

1.0 — 2.0 V
— 15 20
— 23 32
— 8 — S

|

— 0.70 1.2 V

— 501 —
— 72 —
— 57 —
— 1.84 —
— 4.6 —
— 9.8 —

Q
Q

t

D(on

t

D(off

Q

s
d

t

t

f

t

r

r

— 1.6 —
— 2.0 —
— 3.9 —
— 4.2 —
— 16.6 —
— 5.8 —
— 5.5 — ns
— 2.6 — nC

DMC3025LSD

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 7.4A

V

mΩ

pF

Ω

nC

ns

GS

= 4.5V, ID = 6A

V

GS

VDS = 5V, ID = 10A
VGS = 0V, IS = 1A

V

= 15V, VGS = 0V,

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, ID = 10A

DS

= 15V, VGS = 10V,

V

DD

R

= 6, ID = 1A

G

I

= 12A, di/dt = 500A/s

F

Electrical Characteristics P-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

-30 — — V
— — -1 A
— — ±100 nA

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

-1.0 — -2.0 V
— 38 45
— 65 85
— 5 — S

|

— -0.7 -1.2 V

VDS = VGS, ID = -250A

= -10V, ID = -5.2A

V

mΩ

GS

= -4.5V, ID = -4A

V

GS

VDS = -5V, ID = -5.2A

VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate resistance

C

C

oss

C

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

Q

t

t

t

iss

rss

s
d

f

r

r

— 590 — pF
— 69 — pF
— 53 — pF
— 11 —
— 5.1 — nC
— 10.5 — nC
— 1.8 — nC
— 1.9 — nC
— 6.8 — ns
— 4.9 — ns
— 28.4 — ns
— 12.4 — ns
— 14 — ns
— 11 — nC

V

= -25V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -6A

DS

= -15V, VGS = -10V,

V

DD

R

= 6, ID = -1A

G

I

= 12A, di/dt = 500A/s

F

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

3 of 9

www.diodes.com

August 2012

© Diodes Incorporated