Diodes DMC3025LSD User Manual

Product Summary

Device V

N-Channel 30V

P-Channel -30V

R

(BR)DSS

20m @ V 32m @ VGS = 4.5V 45m @ V

85m @ VGS = -4.5V

DS(ON) max

GS

Package

= 10V

= -10V

SO-8

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• DC Motor Control

• DC-AC Inverters

ADVANCED INFORMATION

SO-8

Top View

S2

G2 S1 G1

Pin Configuration

I

D MAX

TA = +25°C

8.5A

7.0A

-5.5A

-4.1A

DMC3025LSD

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

D2

G2

D1 D1

S2

N-CHANNEL MOSFET P-CHANNEL MOSFET

Equivalent Circuit

G1

e3

D1

S1

Ordering Information (Note 4)

Part Number Case Packaging

DMC3025LSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

Top View

8 5

C3025LD

WW

YY

1 4

1 of 9

www.diodes.com

Logo Part no.

Xth week: 01 ~ 53 Year: “11” = 2011

August 2012

θ

Maximum Ratings N-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Ratings P-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage

ADVANCED INFORMATION

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%)

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

T

Steady

State t<10s

Steady

State t<10s

= +25°C, unless otherwise specified.)

A

Steady

State t<10s

Steady

State t<10s

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

D

I

D

I

S

I

DM

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

DMC3025LSD

30 V

±20 V

6.5

5.1

8.5

6.8

5.3

4.1

7.0

5.5 2 A

60 A

-30 V

±20 V

-4.2

-3.2

-5.5

-4.3

-3.5

-2.3

-4.1

-3.2

-2 A

-30 A

A

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

A

TA = +70°C

Steady State

t<10s 62

T

= +25°C

A

TA = +70°C

Steady State

t<10s 49

P

R

P

R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

2 of 9

www.diodes.com

1.2

0.77 104

1.5

0.95

W

°C/W

W

83

°C/W

15

-55 to +150 °C

August 2012

)

g

)

r

)

r

)

g

)

r

)

r

Electrical Characteristics N-CHANNEL (@T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time

ADVANCED INFORMATION

Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

BV

I I

V

GS(th

R

DS (ON)

|Y V

C C C

DSS DSS GSS

fs

SD

iss

oss

rss

R

30 — — V — — 1 A — — ±1 A

1.0 — 2.0 V — 15 20 — 23 32 — 8 — S

|

— 0.70 1.2 V

— 501 — — 72 — — 57 — — 1.84 — — 4.6 — — 9.8 —

Q Q

t

D(on

t

D(off

Q

s d

t

f

t

r

— 1.6 — — 2.0 — — 3.9 — — 4.2 — — 16.6 — — 5.8 — — 5.5 — ns — 2.6 — nC

DMC3025LSD

VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 7.4A

V

mΩ

pF

Ω

nC

ns

GS

= 4.5V, ID = 6A

V

GS

VDS = 5V, ID = 10A VGS = 0V, IS = 1A

V

= 15V, VGS = 0V,

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, ID = 10A

DS

= 15V, VGS = 10V,

V

DD

R

= 6, ID = 1A

G

I

= 12A, di/dt = 500A/s

F

Electrical Characteristics P-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I I

DSS DSS GSS

-30 — — V — — -1 A — — ±100 nA

VGS = 0V, ID = -250A VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

-1.0 — -2.0 V — 38 45 — 65 85 — 5 — S

|

— -0.7 -1.2 V

VDS = VGS, ID = -250A

= -10V, ID = -5.2A

V

mΩ

GS

= -4.5V, ID = -4A

V

GS

VDS = -5V, ID = -5.2A

VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance

Gate resistance

C

oss

C

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q Q

t

D(on

t

D(off

Q

t

iss

rss

s d

f

r

— 590 — pF — 69 — pF — 53 — pF — 11 — — 5.1 — nC — 10.5 — nC — 1.8 — nC — 1.9 — nC — 6.8 — ns — 4.9 — ns — 28.4 — ns — 12.4 — ns — 14 — ns — 11 — nC

V

= -25V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -6A

DS

= -15V, VGS = -10V,

V

DD

R

= 6, ID = -1A

G

I

= 12A, di/dt = 500A/s

F

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

3 of 9

www.diodes.com

August 2012

RAIN CUR

REN

T

RAIN CUR

REN

T

R

OUR

ON-R

R

A

N-SOUR

CE O

N-R

TAN

C

O

R

A

S

O

R

C

E

30

25

(A)

20

15

10

D

I, D

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figur e 1. Typica l Ou t p ut C haracterist ic

0.030

Ω

ADVANCED INFORMATION

0.025

V = 4.5VGS

N-CHANNEL

DMC3025LSD

30

V = 5.0V

DS

T = 150°C

A

T = 125°C

5

0

012345

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 2. Typical Transfer Characteristics

Ω

E ( )

(A)

D

I, D

25

20

15

10

0.10

0.08

ESISTANCE ( )

0.020

ESIS

0.06

0.015

CE

0.010

AIN-S , D

0.005

DS(ON)

0

0 5 10 15 20

I , DRAIN-SOURCE CURRENT (A)

D

Figure. 3 Typical On-Resistance vs.

Drain Current and Gate Vol tage

0.08

Ω

0.07

V = 4.5VGS

0.06

0.05

N-RESISTANCE ( )

0.04

URCE

0.03

0.02

0.01

DS(ON)

R , DRAIN-S

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Figure 5. Typical On-Resistance vs .

Drain Cu rr ent an d Temperature

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

T = 125°C

A

V= 10V

GS

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

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4 of 9

I= 10A

0.04

D

I

0.02

, D

DS(ON)

0

34567 8910

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4. Typical On-Resistance vs.

Drain C urrent an d Gate Voltage

1.6

V=V

10

GS

I = 10A

1.4

D

U

1.2

V=4.5V

GS

IN-

, D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZ ED)

0.6

-50 -25 0 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (C)

J

Figure 6. On-Resistance Variation wit h Tempera t ur e

I= 5A

D

°

August 2012

R

RAIN-SOUR

CE O

N-R

TAN

C

GATE THRESH

O

OLT

G

OUR

CE CUR

REN

T

C

UNC

TION CAPACITANC

F

R

CUR

R

T

Ω

E ( )

ESIS

0.040

0.035

0.030

0.025

0.020

V =4.5V

GS

I= 5A

D

2.0

1.8

E (V)

1.6

A

1.4

I= 250µA

1.2

LD V

D

1.0

DMC3025LSD

I= 1mA

D

0.015

V=V

GS

I= 10A

D

0.010

, D

0.005

DS(ON)

0

-50-25 0 255075100125150 T , JUNCTION TEMPERATURE ( C)

J

Figure 7. On-Resistance Variation with Temperature

30

ADVANCED INFORMATION

25

(A)

20

T= 25°C

A

15

10

S

I, S

5

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9. Di ode Forw ar d Voltage vs. Cur r ent

V = 15V

DS

I= A

10

D

GS

V GATE THRESHOLD VOLTAGE (V)

10

0.8

0.6

0.4

GS(th)

0.2

V,

0

-50 -25 0 25 50 75 100 125 150

°

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 8 Gate Threshold Variation vs. Ambient T emperature

10,000

)

E (p

1,000

C

iss

100

, J

T

f = 1MHz

10

0

51015202530

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10. Typical Junction Ca pacita nce

C

oss

C

rss

100

R

DS(on)

Limited

P = 10sWµ

10

(A) EN

AIN

D

I, D

0.1

DC

1

T = 150°C

J(max)

T = 25°C

A

Single Pulse

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

P = 100µs

W

02 4 6 81012

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

Q(nC)

, TOTAL GA T E CHARGE

g

Fig u re 11. Gate Charge

5 of 9

www.diodes.com

0.01

0.1 1 10 100 V , DRAIN-SOURCE VOLT AGE (V)

DS

Figure 12. SOA, Safe Operation Area

August 2012

RAIN

C

URREN

T

RAIN

C

URREN

T

R,DR

OUR

ON-R

R,DR

OUR

ON-R

R

OUR

ON-R

R

OUR

C

DMC3025LSD

P-CHANNEL

20

15

(A)

10

D

-I , D

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V= -10V

GS

-V , DRAIN -SOURCE VOLTAGE (V)

DS

V = -5.0V

V = -4.5V

GS

V = -4.0V

V = -3.5V

GS

V = -3.0V

GS

V = -2.5V

GS

Figure 13. Typical Output Characteristics

0.12

Ω

GS

20

V = -5.0V

DS

15

(A)

10

D

-I , D

5

T = 150C

°

A

T = 125C

°

A

0

012345

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

Figure 14. Typical Transfer Characteristics

0.10

Ω

ESISTANCE ( )

CE

0.10

0.08

0.06

ADVANCED INFORMATION

0.04

AIN-S

0.02

DS(ON)

0

04812

-I , DRAIN SOURCE CURRENT (A)

D

Figure 15. Typical On-Resistance vs.

Drain Curr ent and G at e Voltage

0.10

Ω

V= -4.5V

GS

0.08

ESISTANCE( )

0.06

CE

0.04

AIN-S

0.02

, D

16

T = 150C

°

A

T = 125C

°

A

T = 85C

°

A

T = 25C

°

A

T = -55C

°

A

20

0.08

ESISTANCE ( )

0.06

CE

0.04

AIN-S

0.02

DS(ON)

0

345678910

-V , GATE SOURCE VOLTAGE (V)

GS

Figure 16. Typical On-Resistance vs.

Drain Curr ent and G at e Voltage

1.7

1.5

E

1.3

1.1

AIN-S , D

0.9

DS(ON)

0.7

ON-RESISTA NCE (NORMA LIZED)

DS(ON)

0

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

D

Figure 17. Typical On-Resistance vs.

Drain Curr ent and Temperature

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

6 of 9

www.diodes.com

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 18. On-Resistance Variation with T emperature

August 2012

R

OUR

CE ON-R

TANC

G

H

RESH

O

G

OUR

CE CUR

REN

T

C

UNC

TIO

N CAPACITAN

C

F

GAT

O

URC

OLT

G

RAIN C

U

R

REN

T

0.10

Ω

E ( )

0.08

ESIS

V=5V

-4.

0.06

GS

I= A

-5

D

0.04

V= -10V

GS

I= A

AIN-S

0.02

, D

DS(on)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

D

Figure 19. On-Resistance Variation with Temperature

20

ADVANCED INFORMATION

16

(A)

12

-10

DMC3025LSD

2.0

1.8

E(V)

1.6

LTA

1.4

1.2

LD V

1.0

0.8

0.6

ATE T

0.4

GS(TH)

0.2

V,

0

°

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Figure 20. Gate Threshold Variation vs. Ambi ent Temperature

10,000

)

f = 1MHz

E (p

1,000

C

iss

8

100

S

-I , S 4

0

0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 21. Diode Forward Voltage vs. Current

10

8

E (V) A

6

E V

4

E-S

2

GS

-V ,

0

024681012

Q , TOTAL GATE CHARGE (nC)

g

Figure 2 3. Ga te-Char ge Charac te r istics

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

7 of 9

www.diodes.com

, J

T

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 22. Typical Junction Capacitance

100

R

DS(on)

Limited

10

(A)

DC

D

-I , D

0.01

1

0.1

P = 10s

W

P = 1s

W

P = 100ms

W

T = 150°C

J(max)

T = +25°C

A

Single Pulse

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 24. SOA, Safe Operation Area

P = 10ms

W

P = 1ms

W

C

oss

C

rss

P = 100µs

W

P = 10sWµ

August 2012

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

e

ADVANCED INFORMATION

b

D

E1

A2

E

A1

Detail ‘A’

h

°

45

A3

A

L

0.254

Gaug e Plan e Seating Plane

7°~9

°

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

C2

Y

C1

Dim Min Max

Detail ‘A’

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

DMC3025LSD

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5 D 4.85 4.95 E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

8 of 9

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August 2012

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCED INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

9 of 9

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August 2012

Diodes DMC3025LSD User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual