Diodes DMC3021LSD User Manual
4
8
5
Y
W
485
C30
Y
DMC3021LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
I
Max
Device
Q2 30V
Q1 -30V
V
(BR)DSS
R
21mΩ @ V
32mΩ @ VGS = 4.5V
39mΩ @ V
53mΩ @ VGS = -4.5V
DS(on)
max
GS
GS
= 10V
= -10V
D
TA = +25°C
8.5A
7.2A
-7A
-5.6A
Description and
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
• Power Management Functions
• Analog Switch
NEW PRODUCT
• Load Switch
Top View
S2
G2
S1
G1
Top View
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
D2
D2
D1
D1
SO-8
G2
N-Channel MOSFET
D2
S2
G1
e3
P-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMC3021LSD-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
21LD
Y WW
1
Chengdu A/T Site
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
C3021LD
Y W
1
Shanghai A/T Site
www.diodes.com
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 8
D1
S1
February 2014
© Diodes Incorporated
V
V
V
DMC3021LSD
Maximum Ratings N-CHANNEL – Q2 (@T
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
= +25°C, unless otherwise specified.)
A
= +25°C
T
A
= +85°C
T
A
alue Unit
V
DSS
V
GSS
I
D
I
DM
30 V
±20 V
8.5
7.1
A
26 A
Maximum Ratings P-CHANNEL – Q1 (@T
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
= +25°C, unless otherwise specified.)
A
V
V
T
= +25°C
A
= +85°C
T
A
I
DSS
GSS
I
D
DM
alue Unit
-30 V
±20 V
-7.0
-4.5
A
-25 A
NEW PRODUCT
Thermal Characteristics (@T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
P
D
R
θJA
T
, T
J
STG
alue Unit
2.5 W
50 °C/W
-55 to +150 °C
Electrical Characteristics N-CHANNEL – Q2 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
30
— —
— —
— —
1.0 µA
±100 nA
V
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
= ±20V, VDS = 0V
V
GS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V
GS(th)
R
DS (ON)
|Y
V
SD
|
fs
1 1.45 2.1 V
—
—
—
—
14 21
18 32
8.1 — S
0.7 1.0 V
VDS = VGS, IC = 250μA
V
= 10V, IC = 7A
mΩ
GS
V
= 4.5V, IC = 5.6A
GS
= 5V, IC = 7A
V
DS
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
g
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on)
t
D(off)
gs
gd
t
r
t
f
— 767 —
— 110 —
— 105 —
— 1.4 —
— 7.8 —
— 16.1 —
— 1.8 —
— 2.5 —
— 5.0 —
— 4.5 —
— 26.3 —
— 8.55 —
pF
pF
pF
Ω
= 10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
= 15V, ID = 9A
V
DS
nC
ns
ns
ns
GS
R
= 6Ω , ID = 1A
G
= 10V, VDS = 15V,
V
ns
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
2 of 8
www.diodes.com
February 2014
© Diodes Incorporated
RAIN CUR
REN
T
R
CUR
RENT
R
RAIN-SOUR
CE O
N-R
TAN
C
5
R
RAIN-SO
U
R
CE O
N
R
T
N
C
NEW PRODUCT
DMC3021LSD
30
V = 8.0V
25
(A)
20
GS
V = 4.5V
GS
V = 3.0V
GS
15
30
V = 5V
25
(A)
20
DS
15
AIN
10
D
I, D
V = 2.5V
GS
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0V
Fig. 1 Typical Out put Characteristics
1
Ω
GS
10
D
I, D
5
0
01 2 34
V , GATE SOURCE VOLTAGE (V)
GS
T = 150°C
T = 125°C
A
T = 85°C
A
A
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
0.06
Ω
E ( )
V = 4.5V
0.05
GS
ESIS
0.04
0.1
V = 2.5V
GS
V = 4.5V
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0.01
0 5 10 15 20 25 30
GS
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
0.03
0.02
, D
0.01
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
T = 150°C
T = 125°C
T = 85°C
T = 25°C
T = -55°C
Fig. 4 Typical Dr ain-Source On-Resistance
vs. Drain Current and Temperature
0.0
Ω
A
A
A
A
A
E ( )
1.4
0.04
A
ESIS
1.2
V = 4.5V
1.0
GS
I = 10A
DS(ON)
R , DRAIN-SOURCE
0.8
ON-RESISTANCE (NORMALIZED)
0.6
D
V = 10V
GS
I = 11.6A
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with Temperat ure
-
0.03
V = 4.5V
0.02
0.01
, D
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
GS
I = 10A
D
V = 10V
GS
I = 11.6A
D
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On-Resistance Variation with Temperature
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
3 of 8
www.diodes.com
February 2014
© Diodes Incorporated
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