4
8
5
Y
W
485
C30
Y
DMC3021LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
I
Max
Device
Q2 30V
Q1 -30V
V
(BR)DSS
R
21mΩ @ V
32mΩ @ VGS = 4.5V
39mΩ @ V
53mΩ @ VGS = -4.5V
DS(on)
max
GS
GS
= 10V
= -10V
D
TA = +25°C
8.5A
7.2A
-7A
-5.6A
Description and
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
• Power Management Functions
• Analog Switch
NEW PRODUCT
• Load Switch
Top View
S2
G2
S1
G1
Top View
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
D2
D2
D1
D1
SO-8
G2
N-Channel MOSFET
D2
S2
G1
e3
P-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMC3021LSD-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
21LD
Y WW
1
Chengdu A/T Site
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
C3021LD
Y W
1
Shanghai A/T Site
www.diodes.com
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 8
D1
S1
February 2014
© Diodes Incorporated
V
V
V
DMC3021LSD
Maximum Ratings N-CHANNEL – Q2 (@T
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
= +25°C, unless otherwise specified.)
A
= +25°C
T
A
= +85°C
T
A
alue Unit
V
DSS
V
GSS
I
D
I
DM
30 V
±20 V
8.5
7.1
A
26 A
Maximum Ratings P-CHANNEL – Q1 (@T
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
= +25°C, unless otherwise specified.)
A
V
V
T
= +25°C
A
= +85°C
T
A
I
DSS
GSS
I
D
DM
alue Unit
-30 V
±20 V
-7.0
-4.5
A
-25 A
NEW PRODUCT
Thermal Characteristics (@T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
P
D
R
θJA
T
, T
J
STG
alue Unit
2.5 W
50 °C/W
-55 to +150 °C
Electrical Characteristics N-CHANNEL – Q2 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
30
— —
— —
— —
1.0 µA
±100 nA
V
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
= ±20V, VDS = 0V
V
GS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V
GS(th)
R
DS (ON)
|Y
V
SD
|
fs
1 1.45 2.1 V
—
—
—
—
14 21
18 32
8.1 — S
0.7 1.0 V
VDS = VGS, IC = 250μA
V
= 10V, IC = 7A
mΩ
GS
V
= 4.5V, IC = 5.6A
GS
= 5V, IC = 7A
V
DS
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
g
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on)
t
D(off)
gs
gd
t
r
t
f
— 767 —
— 110 —
— 105 —
— 1.4 —
— 7.8 —
— 16.1 —
— 1.8 —
— 2.5 —
— 5.0 —
— 4.5 —
— 26.3 —
— 8.55 —
pF
pF
pF
Ω
= 10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
= 15V, ID = 9A
V
DS
nC
ns
ns
ns
GS
R
= 6Ω , ID = 1A
G
= 10V, VDS = 15V,
V
ns
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
2 of 8
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February 2014
© Diodes Incorporated
RAIN CUR
REN
T
R
CUR
RENT
R
RAIN-SOUR
CE O
N-R
TAN
C
5
R
RAIN-SO
U
R
CE O
N
R
T
N
C
NEW PRODUCT
DMC3021LSD
30
V = 8.0V
25
(A)
20
GS
V = 4.5V
GS
V = 3.0V
GS
15
30
V = 5V
25
(A)
20
DS
15
AIN
10
D
I, D
V = 2.5V
GS
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0V
Fig. 1 Typical Out put Characteristics
1
Ω
GS
10
D
I, D
5
0
01 2 34
V , GATE SOURCE VOLTAGE (V)
GS
T = 150°C
T = 125°C
A
T = 85°C
A
A
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
0.06
Ω
E ( )
V = 4.5V
0.05
GS
ESIS
0.04
0.1
V = 2.5V
GS
V = 4.5V
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0.01
0 5 10 15 20 25 30
GS
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
0.03
0.02
, D
0.01
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
T = 150°C
T = 125°C
T = 85°C
T = 25°C
T = -55°C
Fig. 4 Typical Dr ain-Source On-Resistance
vs. Drain Current and Temperature
0.0
Ω
A
A
A
A
A
E ( )
1.4
0.04
A
ESIS
1.2
V = 4.5V
1.0
GS
I = 10A
DS(ON)
R , DRAIN-SOURCE
0.8
ON-RESISTANCE (NORMALIZED)
0.6
D
V = 10V
GS
I = 11.6A
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with Temperat ure
-
0.03
V = 4.5V
0.02
0.01
, D
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
GS
I = 10A
D
V = 10V
GS
I = 11.6A
D
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On-Resistance Variation with Temperature
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
3 of 8
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February 2014
© Diodes Incorporated
OUR
CE CUR
R
C, CAPACITANC
F
R
OUR
C
GE CUR
RENT
NEW PRODUCT
DMC3021LSD
2.4
2.0
1.6
I = 1mA
D
20
16
T = 25°C
A
ENT (A)
12
1.2
I = 250µA
D
8
0.8
S
I, S
0.4
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Thr eshold Variation vs. Ambient Temperature
10,000
f = 1MHz
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
10,000
(nA)
T = 150°C
A
)
E (p
1,000
C
iss
1,000
T = 125°C
A
100
C
100
oss
C
rss
E LEAKA
T = 85°C
A
10
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Capacitance
AIN-S
DSS
1
I, D
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Drain-Source Leakage Curr ent
T = 25°C
A
T = -55°C
A
vs. Drain-Source Voltage
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
4 of 8
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February 2014
© Diodes Incorporated
RAIN CUR
R
N
T
R
CUR
R
T
Electrical Characteristics P-CHANNEL – Q1
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
NEW PRODUCT
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
20
15
(A)
V = 10V
GS
V = 4.5V
GS
V = 4.0V
GS
V = 3.5V
GS
E
10
(@TA = +25°C, unless otherwise specified.)
BV
I
V
R
DS(ON)
|Y
V
C
C
DSS
DSS
GSS
GS(th)
fs
SD
C
iss
oss
rss
R
g
-30 — — V
— —
— —
-1 -1.7 -2.2 V
—
—
—
|
—
— 1002 —
— 125 —
— 118 —
— 13 —
30 39
42 53
-0.75 -1.0 V
-1.0 µA
±100 nA
7 — S
— 10.1 —
— 21.1 —
Q
Q
t
D(on)
t
D(off)
gs
gd
t
r
t
f
— 2.8 —
— 3.2 —
— 10.1 —
— 6.5 —
— 50.1 —
— 22.2 —
20
V = 5V
DS
15
(A)
EN
10
AIN
DMC3021LSD
VGS = 0V, ID = -250μA
= -30V, VGS = 0V
V
DS
= ±20V, VDS = 0V
V
GS
VDS = VGS, ID = -250μA
V
= -10V, ID = -4.3A
mΩ
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
GS
V
= -4.5V, ID = -3.7A
GS
= -5V, ID = -4.3A
V
DS
VGS = 0V, IS = -1.7A
= -10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
= -15V, ID = -6A
V
DS
= -10V, VDS = -15V,
V
GS
= 6Ω , ID = -1A
R
G
D
V = 3.0V
D
I, D
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
V = 2.5V
GS
Fig. 11 Typical Output Characteristics
I, D
5
0
01 2 3 4 56
T = 150°C
A
T = 125°C
A
T = 85°C
A
V , GATE SOURCE VOLTAGE (V)
GS
T = 25°C
A
T = -55°C
A
Fig. 12 Typical Transfer Characteristics
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
5 of 8
www.diodes.com
February 2014
© Diodes Incorporated
R
R
OUR
C
O
R
TANC
R
R
OUR
CE O
R
TANC
R
R
OUR
CE ON-R
TANC
OUR
CE CUR
RENT
NEW PRODUCT
DMC3021LSD
0.10
Ω
E ( )
0.08
ESIS
N-
0.06
E
V = 4.5V
GS
V = 10V
GS
AIN-S
, D
0.04
0.02
DS(ON)
0
0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 13 Typical On-Resi stance
vs. Drain Current and Gate Voltage
1.7
1.5
0.10
Ω
E ( )
V = 10V
GS
0.08
T = 150°C
A
ESIS
T = 125°C
0.06
N-
0.04
AIN-S
0.02
, D
DS(ON)
0
0 5 10 15 20
I , DRAIN CURRENT (A)
D
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Fig. 14 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.08
Ω
E ( )
0.07
0.06
1.3
ESIS
0.05
V = 4.5V
GS
I = 5A
D
1.1
V = 10V
GS
I = 10A
D
0.9
DS(ON)
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V = 4.5V
0.7
0.5
GS
I = 5A
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 15 On-Resistance Variation with Temperature
2.5
2.0
1.5
I = 250µA
I = 1mA
D
D
1.0
0.5
0.04
AIN-S
0.03
0.02
V = 10V
GS
I = 10A
D
, D
0.01
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 16 On-Resistance Variation with Temperature
20
16
(A)
T = 25°C
A
12
8
S
I, S
4
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 17 Gate Threshold Variati on vs. Ambient Temperature
0
0.4 0.6 0.8 1.0 1.2 1.4
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 18 Diode Forward Voltage vs. Current
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
6 of 8
www.diodes.com
February 2014
© Diodes Incorporated
C, CAPAC
T
C
F
R
OUR
C
GE CUR
RENT
DMC3021LSD
10,000
)
1,000
E (p
AN
I
100
f = 1MHz
C
iss
C
oss
C
rss
10,000
(nA)
1,000
E LEAKA
100
T = 150°C
A
T = 125°C
A
T = 85°C
A
10
AIN-S
T = 25°C
A
NEW PRODUCT
DSS
1
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 19 Typical Capacitance
I, D
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 20 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Dim Min Max
A - 1.75
E1
E
A1
Detail ‘A’
h
°
45
A2
A3
A
e
b
D
L
0.254
Gauge Plane
Seating Plane
7°~9
°
Detail ‘A’
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0° 8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
X
Dimensions Value (in mm)
X 0.60
C1
C2
Y
7 of 8
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Y 1.55
C1 5.4
C2 1.27
February 2014
© Diodes Incorporated
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
NEW PRODUCT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMC3021LSD
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
8 of 8
www.diodes.com
February 2014
© Diodes Incorporated
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