Diodes DMC3021LK4 User Manual

NEW PRODUCT

DMC3021LK4

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

max

Device

Q1 30V

Q2 -30V

V

(BR)DSS

R

DS(ON)

21m @ V

32m @ VGS = 4.5V

39m @ V

53m @ VGS = -4.5V

GS

max

= 10V

GS

= -10V

D

TC = +25°C

14A

14A

-14A

-14A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

• Motor Control

• Power Management Functions

• DC-DC Converters

• Backlighting

Top View Bottom View Pinout Top View N-Channel MOSFET P-Channel MOSFET

TO252-4L

Features and Benefits

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm

• Low Gate Threshold Voltage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: TO252-4

• Case Material: Molded Plastic, "Green" Molding Compound UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.027 grams (approximate)

D

G2

D

G1S2 S1G2

D

S2

D

G1

S1

Ordering Information (Note 4)

Part Number Case Packaging

DMC3021LK4-13 TO252-4 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

C3021L

YYWW

= Manufacturer’s Marking
C3021L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

1 of 10

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April 2014

© Diodes Incorporated

NEW PRODUCT

Maximum Ratings N-CHANNEL – Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Avalanche Current, (Notes 7) L = 0.1mH

Avalanche Energy, (Notes 7) L = 0.1mH

Steady

State

Steady

State

T

= +25°C

A

T

= +70°C

A

T

= +25°C

C

T

= +70°C

C

V

DSS

V

GSS

I

D

I

D

I

DM

I

AS

E

AS

Maximum Ratings P-CHANNEL – Q2 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -10V

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Avalanche Current, (Notes 7) L = 0.1mH

Avalanche Energy, (Notes 7) L = 0.1mH

Steady

State

Steady

State

T

= +25°C

A

T

= +70°C

A

= +25°C

T

C

T

= +70°C

C

V

DSS

V

GSS

I

D

I

D

I

DM

I

AS

E

AS

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

Total Power Dissipation (Note 6)

A

TA = +70°C

= +25°C

T

C

TC = +70°C

Thermal Resistance, Junction to Ambient (Note 6) Steady state

Thermal Resistance, Junction to Case (Note 6) Steady state

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMC3021LK4

P

D

R

JA

θ

R

JC

θ

T

J, TSTG

30 V

±20 V

9.4

7.5

14
14

A

A

70 A

16 A

13 mJ

-30 V

±20 V

-6.8

-5.3

-14

-14

A

A

-50 A

-16 A

13 mJ

2.7

1.7

22

W

14

46

5.5

°C/W

-55 to +150 °C

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

2 of 10

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April 2014

© Diodes Incorporated

NEW PRODUCT

RAIN C

U

R

R

N

T

Electrical Characteristics N-CHANNEL – Q1 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (4.5V)

Total Gate Charge (10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

30

25

(A)

20

V= 10V

GS

V = 4.5V

GS

V = 4.0VGS

E

15

V = 3.5V

GS

BV

I

GSS

V

GS(th)

R

DS(ON)

|Y

V

C

C

C

R

Q

Q

Q

Q

t

D(on)

t

D(off)

DSS

DSS

SD

iss

oss

rss

gd

t

t

|

fs

g

g

g

gs

r

f

= +25°C, unless otherwise specified.)

A

30

— —

— —

—

— V

1.0 A

±100 nA

1 1.5 2.1 V

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

14 21

18 32

m

8.5 — S

0.7 1.0 V

751

121

110

1.5

9

17.4

2.2

3

2.5

6.6

19.0

6.3

—

—

—

—

—

—

—

—

—

—

—

—

pF

pF

pF



nC

nC

nC

nC

ns

ns

ns

ns

20

V = 5.0V

DS

15

10

DMC3021LK4

VGS = 0V, ID = 250A

VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 7A

V

GS

V

= 4.5V, ID = 5.6A

GS

VDS = 5V, ID = 7A

VGS = 0V, IS = 1A

V

= 10V, VGS = 0V,

DS

f = 1.0MHz

VDS = 10V, VGS = 0V,f = 1.0MHz

= 10V, VDS = 15V,

V

GS

= 6A

I

D

= 15V, VGS = 10V,

V

DD

= 6, RL = 1.8, ID = 6.7A

R

G

T = 150°C

GS

A

T = A125°C

85°C

T =

A

T =

25°C

A

T = A-55°C

April 2014

© Diodes Incorporated

10

D

D

I, D

V = 3.0V

GS

I , DRAIN CURRENT (A)

5

5

V = 2.5VGS

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristics

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

3 of 10

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0

012345

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

R

R

OUR

CE ON-R

TANC

R

RAIN-SOUR

CE O

N-R

TAN

C

5

NEW PRODUCT

Ω

0.05

0.04

Ω

E ( )

0.05

0.04

V = 4.5V

GS

ESIS

0.03

0.02

V = 4.5VGS

V = 10VGS

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE( )

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.7

V = 10V

1.5

GS

I=10A

D

0.03

0.02

AIN-S

0.01

, D

DS(ON)

0

024 6 8101214161820

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.0

Ω

E ( )

0.04

DMC3021LK4

T = A150°C

T = 125°C

A

T = A85°C

T =

25°C

A

T = A-55°C

1.3

1.1

V = 4.5V

GS

I= 5A

D

ESIS

0.03

V = 4.5V

GS

I=5A

D

0.02

0.9

DS(ON)

R , DRAIN-SOURCE

ON-RESISTANCE (Normalized)

0.7

0.5

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)J°

Fig. 5 On-Resistance Variation with Temperature

2.5

0.01

, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)J°

Fig. 6 On-Resistance Variation with Temperature

20

V = 10V

GS

I = 10A

D

18

2

16

14

I= 1mA

D

12

1.5

I = 250µA

1

GS(th)

V , GATE THRESHOLD VOLTAGE (V)

0.5

-50 -25 0 25 50 75 100 125 150

D

T , JUNCTION TEMPERATURE ( C)J°

Fig. 7 On-Resistance Variation with Temperature

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

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10

T = 25°C

8

A

6

S

I , SOURCE CURRENT (A)

4

2

0

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

© Diodes Incorporated

April 2014

C

T, J

UNC

TION CAPACIT

C

pF)

NEW PRODUCT

DMC3021LK4

10,000

T = 150°C

A

1,000

100

T = A125°C

85°C

T =

A

10

DSS

I , LEAKAGE CURRENT (nA)

1

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

T = A25°C

Fig. 9 Typical Drain-Source Leakage Current vs. Voltage

10

10,000

f=1MHz

E (

1,000

AN

C

100

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE(V)

DS

oss

Fig. 10 Typical Junction Capacitance

100

R

DS(ON)

Limited

C

iss

C

rss

8

V = 15V

GS

V (V)

DS

I=6A

D

6

4

D

I , DRAIN CURRENT (A)

10

0.1

DC

P = 10sW

P=1s

W

P = 100ms

1

W

P = 10ms

W

P=1ms

W

P = 100µs

W

P = 10µsW

2

T = 150 C

J(MAX)

T= 25C

A

0

0246 8101214161820

Q - (nC)

G

Single Pulse

0.01

0.1 1 10 100

Fig. 11 Gate Charge Characteristi cs

°

°

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 SOA, Safe Operation Area

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

5 of 10

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April 2014

© Diodes Incorporated

NEW PRODUCT

R

CUR

R

T

Electrical Characteristics P-CHANNEL – Q2 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (4.5V)

Total Gate Charge (10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

30

-V = 10V

GS

-V = 4.5V

GS

25

BV

DSS

I

GSS

V

GS(th)

R

DS (ON)

|Y

V

C

C

C

R

Q

Q

Q

Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

g

g

g

gs

gd

t

r

t

f

|

= +25°C, unless otherwise specified.)

A

-30 — — V

— —

— —

-1 A

±100 nA

-1 -1.7 -2.2 V

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

30 39

42 53

m

10 — S

-0.75 -1.0 V

1039

144

134

13

10.1

21.1

2.8

3.2

10.1

6.5

50.1

22.2

—

—

—

—

—

—

—

—

—

—

—

—

pF

pF

pF



nC

nC

nC

nC

ns

ns

ns

ns

20

V = -5.0V

DS

DMC3021LK4

VGS = 0V, ID = -250A

VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = -250A

= -10V, ID = -4.3A

V

GS

V

= -4.5V, ID = -3.7A

GS

VDS = -5V, ID = -4.3A

VGS = 0V, IS = -1A

V

= -10V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V,f = 1.0MHz

= -10V, VDS = -15V,

V

GS

= -6A

I

D

= -15V, VGS = -10V,

V

DS

= 6, ID = -1A

R

G

-V = 4.0V

(A)

20

GS

15

EN

15

-V = 3.5VGS

10

T =

A

85°C

AIN

10

D

-I , D

5

0

00.511.52

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-V = 3.0VGS

-V = 2.5VGS

-V = 2.0VGS

Fig.13 Typical Output Characteristics

D

-I , DRAIN CURRENT (A)

5

0

012345

T =

125°C

A

25°C

T =

150°C

T =

A

V , GATE-SOURCE VOLTAGE (V)

-GS

A

T = -55°C

A

Fig. 14 Typical Transfer Characteristics

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

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R

R

OUR

ON-R

R

R

OUR

O

R

2

R

RAIN-SOUR

CE O

N-R

TAN

C

GAT

THR

H

O

OLT

G

OUR

C

C

URR

T

NEW PRODUCT

DMC3021LK4

0.10

Ω

0.08

ESISTANCE( )

0.06

CE

0.04

-V = 4.5VGS

AIN-S

-V = 10V

0.02

, D

DS(ON)

0

0 5 10 15 20

-I , DRAIN-SOURCE CURRENT (A)

D

GS

Fig. 15 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.7

0.1

Ω

V = 4.5VGS

0.10

ESISTANCE ( )

0.08

N-

CE

0.06

T =

A

125°C

0.04

AIN-S

, D

0.02

DS(ON)

0

02468101214161820

-I , DRAIN CURRENT (A)

D

T = 150°C

A

85°C

T =

A

25°C

T =

A

T = A-55°C

Fig. 16 Typical On-Resistance vs.

Drain Current and Temperature

0.08

Ω

1.5

E ( )

0.06

1.3
ESIS

-V = 4.5V

GS

-I = 5A

D

1.1

-V = 10V

GS

-I = 10A

D

0.9

DS(ON)

R , DRAIN-SOURCE

ON-RESISTANCE (Normalized)

0.7

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 17 On-Resistance Variation with Temperature

2.5

°

0.04

-V = 10V

GS

-I = 10A

0.02

D

, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)J°

Fig. 18 On-Resistance Variation with Temperature

20

18

E (V)

2

A

-I = 250µA

D

1.5

LD V

-I = 1mA

D

ES

1

E

0.5

GS(th)

-V ,
0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)J°

Fig. 19 On-Resistance Variation with Temperature

16

(A)

14

EN

12

10

E

T = 25°C

A

8

6

S

-I , S
4

2

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 20 Diode Forward Voltage vs. Current

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

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GE CUR

RENT

C

T

UNC

TION C

P

C

T

C

p

F

R

CUR

R

NEW PRODUCT

DMC3021LK4

10,000

150°C

1,000

(nA)

T =

A

T =

A

125°C

100

T = A85°C

10

1

DSS

-I , LEAKA

0.1

0 5 10 15 20 25 30

T = 25°C

A

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 21 Typical Drain-Source Leakage Current vs. Voltage

10

10,000

f = 1MHz

)

E (

1,000
AN

I

C

iss

A
A

100

C

oss

C

rss

, J

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 22 Typical Junction Capacitance

100

R

DS(ON)

Limited

8

V= 15V

DS

I=6A

D

6

GS

V (V)

4

2

0

0 5 10 15 20 25

Q - (nC)

G

Fig. 23 Gate Charge Characteristics

10

ENT (A)

1

AIN

D

-I , D

0.1

0.01

0.1 1 10 100

DC

P = 10sW

P=1s

W

P = 100ms

W

P = 10ms

W

P=1ms

W

P = 100µs

W

P = 10µsW

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

°

°

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 24 SOA, Safe Operation Area

1

D = 0.7

D = 0.5

D = 0.3

0.1

0.01

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 46°C/W

θ

JA

Duty Cycle, D = t1 / t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
T1, PULSE DURATION TIME (sec)

Fig. 25 Transient Thermal Resistance

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

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NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

4X b2

E

b3

L3

D

L4

e

5X b

A

c2

A2

H

A1

L

a

E1

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1

DMC3021LK4

Dim Min Max Typ

TO252-4

A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07

b 0.51 0.71 0.583

b2 0.61 0.79 0.70
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531

D 6.00 6.20 6.10
D1 5.21

e

E 6.45 6.70 6.58
E1 4.32

H 9.40 10.41 9.91

L 1.40 1.78 1.59

L3 0.88 1.27 1.08
L4 0.64 1.02 0.83

a 0° 10°

All Dimensions in mm

− −

− −

1.27

− −

−

Y1

X (4x)

Dimensions Value (in mm)

c 1.27

Y2

c1

Y3

Y

c

c1 2.54

X 1.00

X1 5.73

Y 2.00
Y1 6.17
Y2 1.64
Y3 2.66

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

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April 2014

© Diodes Incorporated

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

DMC3021LK4

DMC3021LK4

Document number: DS35082 Rev. 5 - 2

10 of 10

www.diodes.com

April 2014

© Diodes Incorporated