Diodes DMC3018LSD User Manual
4
8
5
Y
W
4
8
5
C3018
Y
Product Summary
Device
Q2 30V
Q1 -30V
V
(BR)DSS
R
20mΩ @ V
32mΩ @ VGS = 4.5V
45mΩ @ V
65mΩ @ VGS = -4.5V
DS(on)
max
GS
GS
TA = +25°C
= 10V
= -10V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
NEW PRODUCT
) and yet maintain superior switching
DS(ON)
Applications
• Power Management Functions
• Analog Switch
• Load Switch
SO-8
Top View
S2
G2
S1
G1
I
Max
D
9.1A
7.2A
-6A
-5A
DMC3018LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
• Complementary Pair MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072g (approximate)
e3
D2
D2
D2
D1
D1
G2
G1
S2
Top View
N-Channel MOSFET
P-Channel MOSFET
D1
S1
Ordering Information (Note 4)
Part Number Case Packaging
DMC3018LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
LD
Y WW
1
Chengdu A/T Site
DMC3018LSD
Document number: DS31310 Rev. 9 - 2
C3018LD
Y W
1
Shanghai A/T Site
www.diodes.com
= Manufacturer’s Marking
C3018LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 8
February 2014
© Diodes Incorporated
Maximum Ratings N-CHANNEL – Q2 (@T
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
T
= +25°C
Drain Current (Note 5)
A
= +70°C
T
A
Pulsed Drain Current (Note 6)
Maximum Ratings P-CHANNEL – Q1 (@T
Characteristic Symbol Value Unit
Drain Source Voltage
NEW PRODUCT
Gate-Source Voltage
T
= +25°C
Drain Current (Note 5)
A
= +70°C
T
A
Pulsed Drain Current (Note 6)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics N-CHANNEL – Q2 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V
R
DS(ON)
|Y
V
GS(th)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
C
R
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes: 5. Device mounted on FR-4 PCB, on 2oz. Copper pads with R
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
Q
Q
Q
DMC3018LSD
Document number: DS31310 Rev. 9 - 2
= +25°C, unless otherwise specified.)
A
V
DSS
V
GSS
I
D
I
DM
= +25°C, unless otherwise specified.)
A
V
DSS
V
GSS
I
D
I
DM
P
D
R
JA
θ
T
, T
J
STG
= +25°C, unless otherwise specified.)
A
30
DSS
⎯ ⎯
⎯ ⎯
1 1.9 2.1 V
⎯
⎯
⎯
|
fs
0.5
SD
⎯
iss
⎯
oss
⎯
rss
⎯
G
⎯
g
⎯
gs
⎯
gd
= 50°C/W
ΘJA
⎯ ⎯
18
29
10
⎯
631
147
99
0.9
5.9
12.4
1.8
3.4
1 µA
± 100
20
32
⎯
1.2 V
⎯
⎯
⎯
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯
⎯ VDS = 15V, VGS = 10V, ID = 9A
⎯
2 of 8
www.diodes.com
DMC3018LSD
30 V
±20
9.1
7.7
32 A
-30 V
±20
-6
-5
-21 A
2.5 W
50
-55 to +150
V
V
= 0V, ID = 250µA
GS
V
= 24V, VGS = 0V
DS
nA
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250µA
V
= 10V, ID = 6.9A
mΩ
GS
V
= 4.5V, ID = 5.0A
GS
S
VDS = 5V, ID = 6.9A
VGS = 0V, IS = 1A
pF
pF
V
= 15V, VGS = 0V, f =1.0MHz
DS
pF
V
= 15V, VGS = 4.5V, ID = 7A
DS
= 15V, VGS = 10V, ID = 9A
V
nC
DS
VDS = 15V, VGS = 10V, ID = 9A
V
A
V
A
°C/W
°C
February 2014
© Diodes Incorporated
Electrical Characteristics P-CHANNEL – Q1
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
NEW PRODUCT
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DMC3018LSD
Document number: DS31310 Rev. 9 - 2
BV
DSS
I
⎯ ⎯
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
| ⎯
fs
V
SD
C
iss
C
⎯
oss
C
⎯
rss
R
G
Q
g
Q
gs
Q
⎯
gd
www.diodes.com
(@TA = +25°C, unless otherwise specified.)
-30
⎯ ⎯
-1.0 µA
⎯ ⎯
± 100
-1 -1.7 -2.1 V
⎯
⎯
-0.5
⎯
⎯
⎯
⎯
35 45
56 65
8.2
⎯
722
114
92
1.9
7.0
13.7
1.7
4.1
⎯
-1.2 V
⎯
⎯
⎯
⎯ Ω
⎯
⎯
⎯ VDS = -15V, VGS = -4.5V, ID = -6A
V
V
GS
V
DS
nA
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -6A
mΩ
V
GS
S
VDS =-5V, ID = -6A
VGS = 0V, IS = -1A
pF
pF
V
DS
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
V
DS
V
nC
DS
VDS = -15V, VGS = -4.5V, ID = -6A
3 of 8
DMC3018LSD
= 0V, ID = -250µA
= -24V, VGS = 0V
= -4.5V, ID = -5.0A
= -15V, VGS = 0V, f = 1.0MHz
= -15V, VGS = -4.5V, ID = -6A
= -15V, VGS = -10V, ID = -6A
February 2014
© Diodes Incorporated
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