Page 1
g
NEW PRODUCT
ADVANCE INFORMATION
Product Summary
Device
Q1 20V
Q2 -20V
V
R
(BR)DSS
max
DS(ON)
0.99 @ V
1.2 @ VGS = 2.5V
1.8 @ VGS = 1.8V
2.4 @ VGS = 1.5V
1.9 @ V
2.4 @ VGS = -2.5V
3.4 @ VGS = -1.8V
5 @ VGS = -1.5V
= 4.5V
GS
= -4.5V
GS
TA = +25°C
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
NEW PRODUCT
DS(on)
ideal for high efficiency power management applications.
ADVANCE INFORMATION
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
ESD PROTECTED
I
max
D
450mA
400mA
330mA
300mA
-310mA
-280mA
-240mA
-180mA
Top View
DMC2990UDJ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
e3
SOT963
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
D
S
G
1
G
1
Top View
Schematic and
Transistor Dia
S
2
D
1
ram
2
2
Ordering Information (Note 5 & 6)
Part Number Case Packaging
DMC2990UDJ-7 SOT963 10K/Tape & Reel
DMC2990UDJ-7B SOT963 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.
6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Fire Retardants.
2O3
Marking Information
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
D1
D1 = Product Type Marking Code
1 of 9
www.diodes.com
March 2013
© Diodes Incorporated
Page 2
NEW PRODUCT
ADVANCE INFORMATION
Maximum Ratings Q1 N-CHANNEL (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 1.8V
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)
Maximum Ratings Q2 P-CHANNEL (@T
NEW PRODUCT
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -1.8V
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)
Characteristic Symbol Value Units
= +25°C, unless otherwise specified.)
A
T
Steady
State
t<5s
Steady
State
t<5s
Steady
State
t<5s
Steady
State
t<5s
= +25°C
A
= +70C
T
A
T
= +25C
A
T
= +70C
A
= +25C
T
A
T
= +70C
A
= +25C
T
A
= +70C
T
A
= +25°C, unless otherwise specified.)
A
= +25C
T
A
T
= +70C
A
T
= +25C
A
T
= +70C
A
T
= +25C
A
= +70C
T
A
T
= +25C
A
T
= +70C
A
DMC2990UDJ
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
20 V
±8 V
450
350
520
410
330
260
390
310
mA
mA
mA
mA
440 mA
800 mA
-20 V
±8 V
-310
-240
-360
-280
-240
-190
-280
-220
mA
mA
mA
mA
-440 mA
-800 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
Operating and Storage Temperature Range
Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
www.diodes.com
P
D
R
T
J, TSTG
JA
t<5s 270 °C/W
2 of 9
350 mW
360 °C/W
-55 to +150 °C
March 2013
© Diodes Incorporated
Page 3
)
g
g
g
)
r
)
)
g
g
g
)
r
)
NEW PRODUCT
ADVANCE INFORMATION
Electrical Characteristics Q1 N-CHANNEL (@T
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NEW PRODUCT
Gate Resistance
ADVANCE INFORMATION
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Characteristic Symbol Min Typ Max Unit Test Condition
BV
I
GSS
V
GS(th
R
DS(ON)
|Y
V
C
C
C
R
Q
Q
Q
t
D(on
t
D(off
= +25°C, unless otherwise specified.)
A
20 - - V
DSS
DSS
- - 100
- - 50
- - ±100 nA
0.4 - 1.0 V
- 0.60 0.99
- 0.75 1.2
- 0.90 1.8
- 1.2 2.4
- 2.0 -
180 850 - mS
|
SD
iss
oss
rss
t
t
fs
G
s
d
f
- 0.6 1.0 V
- 27.6 - pF
- 4.0 - pF
- 2.8 - pF
- 113 -
- 0.5 - nC
- 0.07 - nC
- 0.07 - nC
- 4.0 - ns
- 3.3 - ns
- 19.0 - ns
- 6.4 - ns
DMC2990UDJ
VGS = 0V, ID = 250A
V
= 16V, VGS = 0V
nA
DS
V
= 5V, VGS = 0V
DS
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250A
= 4.5V, ID = 100mA
V
GS
V
= 2.5V, ID = 50mA
GS
V
= 1.8V, ID = 20mA
GS
V
= 1.5V, ID = 10mA
GS
V
= 1.2V, ID = 1mA
GS
VDS = 5V, ID = 125mA
VGS = 0V, IS = 10mA
= 15V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
V
= 4.5V, VDS = 10V,
GS
I
= 250mA
D
= 15V, VGS = 4.5V,
V
DD
R
= 47, RG = 2,
L
= 200mA
I
D
Electrical Characteristics Q2 P-CHANNEL (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-20 - - V
- - 100
- - 50
- - ±100 nA
VGS = 0V, ID = -250A
= -16V, VGS = 0V
V
nA
DS
V
= -5V, VGS = 0V
DS
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS(ON)
|Y
V
fs
SD
-0.4 - -1.0 V
- 1.2 1.9
- 1.5 2.4
- 2.1 3.4
- 2.5 5
- 4.0 -
100 450 - mS
|
- -0.6 -1.0 V
VDS = VGS, ID = -250A
= -4.5V, ID = -100mA
V
GS
V
= -2.5V, ID = -50mA
GS
V
= -1.8V, ID = -20mA
GS
V
= -1.5V, ID = -10mA
GS
V
= -1.2V, ID = -1mA
GS
VDS = -5V, ID = -125mA
VGS = 0V, IS = -10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
C
C
t
t
C
oss
rss
R
Q
Q
Q
D(on
t
D(off
t
iss
G
s
d
f
- 28.7 - pF
- 4.2 - pF
- 2.9 - pF
- 399 -
- 0.4 - nC
- 0.08 - nC
- 0.06 - nC
- 5.8 - ns
- 5.7 - ns
- 31.1 - ns
- 16.4 - ns
= -15V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
= -4.5V, VDS =- 10V,
V
GS
= -250mA
I
D
= -15V, VGS = -4.5V,
V
DD
R
= 2, ID = -200mA
G
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
3 of 9
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March 2013
© Diodes Incorporated
Page 4
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
CE ON-R
TANC
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
DMC2990UDJ
Q1 N-CHANNEL
0.8
0.6
V
VGS = 3.0V
= 2.5V
V
GS
VGS = 2.0V
VGS = 4.5V
=4.0V
GS
0.4
VGS = 1.5V
D
I , DRAIN CURRENT (A)
0.2
V = 1.2V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V , DRAIN-SOURCE VOLTAGE (A)
DS
GS
Fig. 1 Typical Output Characteristics
1.2
E ( )
1.0
V = 1.8V
ESIS
0.8
0.6
GS
V = 2.5V
GS
0.8
T = -55°C
A
85°C
T =
T = A25°C
A
0.6
125°C
T =
A
150°C
T =
0.4
D
I , DRAIN CURRENT(A)
0.2
A
V = 5.0V
DS
0
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
1.2
E ( )
1.0
ESIS
0.8
0.6
V = 4.5V
GS
T = 150°C
A
T = A125°C
T = A85°C
V = 4.5V
GS
, D
0.4
0.2
DS(ON)
0 0.2 0.4 0.6 0.8
I , DRAIN-SOURCE CURRENT
D
Fig. 3 Typical On- Resistance vs. Drain Current and Gate Voltage
1.6
I = 300mA
D
0.4
AIN-S
, D
0.2
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
I DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance vs. Dr ain Current and Temperature
1.2
1.0
T = A25°C
T = A-55°C
1.4
0.8
I = 150mA
D
1.2
I = 150mA
D
1.0
DS(ON)
R , DRAIN-SOURCE
ON-RESISTANCE (Normalized)
0.8
0.6
-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE( C)
J
Fig. 5 On-Resistance Variation with Temperature
0.6
I = 300mA
D
0.4
0.2
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
J
Fig. 6 On-Resistance Variation with Temperature
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
4 of 9
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March 2013
© Diodes Incorporated
Page 5
OUR
CE C
URR
T
C
T
UNC
TION CAPACITANC
F
G
T
OUR
C
OLT
G
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
DMC2990UDJ
(A)
EN
1.0
0.8
0.6
T = 25°C
A
1.2
1.0
0.8
0.6
I = 250µA
D
I = 1mA
D
0.4
0.4
S
I, S
0.2
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
J
Fig. 7 Gate Thr eshold Variation vs. Ambient Temperature
50
f = 1MHz
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE- DRAIN VOLTAGE (V)
SD
Fig. 8 Diodes Forward Voltage vs. Current
1,000
)
40
E (p
T = 150°C
A
100
30
C
iss
T =
A
125°C
20
, J
10
0
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
oss
C
rss
10 15 2050
Fig. 9 Typical Junction Capacitance
8
E (V)
6
A
E V
4
E-S
A
2
GS
V,
0
0 0.2 0.4 0.6 0.8 1
Q - (nC)
G
V = 10V
DS
Fig. 11 Gate Charge Characteristics
10
DSS
I , LEAKAGE CURRENT (nA)
1
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1
R
DS(on)
Limited
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
I , DRAIN CURRENT (A)
0.01
D
0.1
T = 150°C
J(MAX)
T = 25°C
A
Single Pulse
0.001
0.1
110100
V , DRAIN-SOURCE VOLTAGE
DS
Fig. 12 SOA, Safe Operation Area
85°C
T =
A
T = A25°C
P = 100µs
W
P = 10µs
W
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
5 of 9
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March 2013
© Diodes Incorporated
Page 6
R
R
OUR
ON-R
R
R
OUR
ON-R
R
R
N-SOUR
C
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
DMC2990UDJ
Q2 P-CHANNEL
0.8
0.6
0.4
D
0.2
-I , DRAIN CURRENT (A)
0
0 0.5 1 1.5 2 2.5 3 3.5 4
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Output Characteristics
3.2
2.8
V = -1.8V
GS
2.4
ESISTANCE ( )
2.0
0.8
V = -5.0V
DS
T = 85°C
A
T = 25°C
A
0.6
T = -55°C
A
0.4
D
-I , DRAIN CURRENT(A)
0.2
0
0 0.5 1 1.5 2 2.5 3
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 14 Typical Transfer Characteristics
2.0
V = -4.5V
GS
1.6
ESISTANCE ( )
1.2
T = 125°C
A
T = 125°C
A
T = 150°C
A
T = 150°C
A
3.5 4
T = 85°C
A
1.6
CE
1.2
AIN-S
0.8
, D
0.4
DS(ON)
0
0 0.2 0.4 0.6 0.8
-I , DRAIN-SOURCE CURRENT
D
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
1.5
E
1.3
1.1
AI
, D
0.9
DS(ON)
ON-RESISTANCE (Normalized)
0.7
V = -4.5V
GS
V = -2.5V,
GS
I = -150mA
D
V = -4.5V,
GS
I = -300mA
D
CE
T = 25°C
A
0.8
AIN-S
0.4
, D
DS(ON)
0
0 0.2 0.4 0.6 0.8
-I DRAIN CURRENT (A)
D
Fig. 16 Typical On-Resi stance vs.
Drain Current and Temperature
2.4
V = -2.5V,
2.0
GS
I = -150mA
D
1.6
1.2
V = -4.5V,
GS
I = -300mA
D
0.8
0.4
T = -55°C
A
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
J
Fig. 17 On-Resistance Variation with Temperature
DS(ON)
0
R , DRAIN-SOURCE ON-RESISTANCE ( )
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
J
Fig. 18 On-Resistance Variation with Temperature
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
6 of 9
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March 2013
© Diodes Incorporated
Page 7
2
OUR
CE CUR
R
T
C
UNC
TION CAPACITANC
F
G
T
OUR
C
OLT
G
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
1.
1.0
0.8
0.6
I = -250µA
D
0.4
0.2
GS(TH)
-V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
J
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
50
)
40
E (p
30
I = -1mA
D
f = 1MHz
C
DMC2990UDJ
0.8
0.6
(A)
EN
T = 25°C
A
0.4
S
0.2
I, S
0
0.4 0.6 0.8 1.0 1.2
V , SOURCE- DRAIN VOLTAGE (V)
SD
Fig. 20 Diodes Forward Voltage vs. Current
1,000
T = 150°C
A
T = 125°C
A
iss
100
T = 85°C
20
A
10
10
, J
T
0
02 4 6 8 10
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
oss
C
rss
Fig. 21 Typical Juncti on Capacitance
5
4
E (V)
A
3
E V
V = 10V, I = -4.5A
DS
D
2
E S
A
1
GS
-V ,
0
0 2 4 6 81012141618
Q , TOTAL GATE CHARGE (nC)
G
Fig. 23 Gate Charge Characteristics
DSS
-I , LEAKAGE CURRENT (nA)
1
0 4 6 8 10 12 14 16 18 20
2
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 22 Typical Leakage Current vs.
Drain-Source Voltage
10
P = 100µs
W
W
W
P = 10ms
W
P=1ms
R
1
0.1
D
0.01
I , DRAIN CURRENT (A)
0.001
0.1 1 10 100
DS(ON)
Limited
P = DC
W
P = 10sW
P=1sW
P = 100ms
T = 150 C
J(MAX)
T= 25C
A
Single Pulse
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 24 SOA, Safe Operation Area
T = -25°C
A
P = 10µs
W
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
7 of 9
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March 2013
© Diodes Incorporated
Page 8
NEW PRODUCT
ADVANCE INFORMATION
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R(t), TRANSIENT THERMAL RESISTANCE
0.001
0.000001 0.00001 0.0001 0.001 0.01
NEW PRODUCT
ADVANCE INFORMATION
Package Outline Dimensions
E1
A1
Suggested Pad Layout
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
Y1
Y (6X)
X (6X)
DMC2990UDJ
D = 0.9
R (t) = r(t)*R
JA JA
R = 356C/W
JA
Duty Cycle, D = t1/t2
t1, PULSE DURATION TIME (sec)
Fig. 25 Transient Thermal Resistance
D
e1
E
e
b (6 places)
A
CC
c
8 of 9
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0.1 1 10 100 1,000
L
Dim Min Max Typ
SOT963
A 0.40 0.50 0.45
A1 0 0.05 -
c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
All Dimensions in mm
Dimensions Value (in mm)
C 0.350
X 0.200
Y 0.200
Y1 1.100
March 2013
© Diodes Incorporated
Page 9
NEW PRODUCT
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
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final and determinative format released by Diodes Incorporated.
ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMC2990UDJ
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
9 of 9
www.diodes.com
March 2013
© Diodes Incorporated
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