Diodes DMC2990UDJ User Manual

g

NEW PRODUCT

ADVANCE INFORMATION

Product Summary

Device

Q1 20V

Q2 -20V

V

R

(BR)DSS

max

DS(ON)

0.99 @ V

1.2 @ VGS = 2.5V

1.8 @ VGS = 1.8V

2.4 @ VGS = 1.5V

1.9 @ V

2.4 @ VGS = -2.5V

3.4 @ VGS = -1.8V

5 @ VGS = -1.5V

= 4.5V

GS

= -4.5V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

NEW PRODUCT

DS(on)

ideal for high efficiency power management applications.

ADVANCE INFORMATION

Applications

 General Purpose Interfacing Switch

 Power Management Functions

 Analog Switch

ESD PROTECTED

I

max

D

450mA

400mA

330mA

300mA

-310mA

-280mA

-240mA

-180mA

Top View

DMC2990UDJ

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance

 Very low Gate Threshold Voltage, 1.0V max

 Low Input Capacitance

 Fast Switching Speed

 Ultra-Small Surface Mount Package 1mm x 1mm

 Low Package Profile, 0.45mm Maximum Package height

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3 & 4)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT963

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

e3

SOT963

Solderable per MIL-STD-202, Method 208

 Weight: 0.027 grams (approximate)

D

S

G

1

G

1

Top View

Schematic and

Transistor Dia

S

2

D

1

ram

2

2

Ordering Information (Note 5 & 6)

Part Number Case Packaging

DMC2990UDJ-7 SOT963 10K/Tape & Reel

DMC2990UDJ-7B SOT963 10K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb

5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.

6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Fire Retardants.

2O3

Marking Information

DMC2990UDJ

Document number: DS35481 Rev. 9 - 2

D1

D1 = Product Type Marking Code

1 of 9

www.diodes.com

March 2013

© Diodes Incorporated

NEW PRODUCT

ADVANCE INFORMATION

Maximum Ratings Q1 N-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 7) VGS = 4.5V

Continuous Drain Current (Note 7) VGS = 1.8V

Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)

Maximum Ratings Q2 P-CHANNEL (@T

NEW PRODUCT

ADVANCE INFORMATION

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)

Characteristic Symbol Value Units

= +25°C, unless otherwise specified.)

A

T

Steady

State

t<5s

Steady

State

t<5s

Steady

State

t<5s

Steady

State

t<5s

= +25°C

A

= +70C

T

A

T

= +25C

A

T

= +70C

A

= +25C

T

A

T

= +70C

A

= +25C

T

A

= +70C

T

A

= +25°C, unless otherwise specified.)

A

= +25C

T

A

T

= +70C

A

T

= +25C

A

T

= +70C

A

T

= +25C

A

= +70C

T

A

T

= +25C

A

T

= +70C

A

DMC2990UDJ

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

20 V
±8 V

450
350

520
410

330
260

390
310

mA

mA

mA

mA

440 mA
800 mA

-20 V
±8 V

-310

-240

-360

-280

-240

-190

-280

-220

mA

mA

mA

mA

-440 mA

-800 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

Operating and Storage Temperature Range

Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout.

8. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

DMC2990UDJ

Document number: DS35481 Rev. 9 - 2

www.diodes.com

P

D

R

T

J, TSTG

JA

t<5s 270 °C/W

2 of 9

350 mW
360 °C/W

-55 to +150 °C

March 2013

© Diodes Incorporated

)

g

g

g

)

r

)

)

g

g

g

)

r

)

NEW PRODUCT

ADVANCE INFORMATION

Electrical Characteristics Q1 N-CHANNEL (@T

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

NEW PRODUCT

Gate Resistance

ADVANCE INFORMATION

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Characteristic Symbol Min Typ Max Unit Test Condition

BV

I

GSS

V

GS(th

R

DS(ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on

t

D(off

= +25°C, unless otherwise specified.)

A

20 - - V

DSS

DSS

- - 100

- - 50

- - ±100 nA

0.4 - 1.0 V

- 0.60 0.99

- 0.75 1.2

- 0.90 1.8

- 1.2 2.4

- 2.0 -

180 850 - mS

|

SD

iss

oss

rss

t

t

fs

G

s

d

f

- 0.6 1.0 V

- 27.6 - pF

- 4.0 - pF

- 2.8 - pF

- 113 - 

- 0.5 - nC

- 0.07 - nC

- 0.07 - nC

- 4.0 - ns

- 3.3 - ns

- 19.0 - ns

- 6.4 - ns

DMC2990UDJ

VGS = 0V, ID = 250A
V

= 16V, VGS = 0V

nA



DS

V

= 5V, VGS = 0V

DS

VGS = ±5V, VDS = 0V

VDS = VGS, ID = 250A

= 4.5V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

GS

V

= 1.8V, ID = 20mA

GS

V

= 1.5V, ID = 10mA

GS

V

= 1.2V, ID = 1mA

GS

VDS = 5V, ID = 125mA
VGS = 0V, IS = 10mA

= 15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 4.5V, VDS = 10V,

GS

I

= 250mA

D

= 15V, VGS = 4.5V,

V

DD

R

= 47, RG = 2,

L

= 200mA

I

D

Electrical Characteristics Q2 P-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - 100

- - 50

- - ±100 nA

VGS = 0V, ID = -250A

= -16V, VGS = 0V

V

nA

DS

V

= -5V, VGS = 0V

DS

VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

fs

SD

-0.4 - -1.0 V

- 1.2 1.9

- 1.5 2.4

- 2.1 3.4

- 2.5 5

- 4.0 -

100 450 - mS

|

- -0.6 -1.0 V

VDS = VGS, ID = -250A

= -4.5V, ID = -100mA

V

GS

V

= -2.5V, ID = -50mA



GS

V

= -1.8V, ID = -20mA

GS

V

= -1.5V, ID = -10mA

GS

V

= -1.2V, ID = -1mA

GS

VDS = -5V, ID = -125mA

VGS = 0V, IS = -10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

C
C

t

t

C

oss

rss

R

Q
Q
Q

D(on

t

D(off

t

iss

G

s

d

f

- 28.7 - pF

- 4.2 - pF

- 2.9 - pF

- 399 - 

- 0.4 - nC

- 0.08 - nC

- 0.06 - nC

- 5.8 - ns

- 5.7 - ns

- 31.1 - ns

- 16.4 - ns

= -15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= -4.5V, VDS =- 10V,

V

GS

= -250mA

I

D

= -15V, VGS = -4.5V,

V

DD

R

= 2, ID = -200mA

G

DMC2990UDJ

Document number: DS35481 Rev. 9 - 2

3 of 9

www.diodes.com

March 2013

© Diodes Incorporated