Diodes DMC2700UDM User Manual
A
f
M
2D1
1
Product Summary
NEW PRODUCT
Device
Q1 20V
Q2 -20V
V
(BR)DSS
R
DS(on)
0.4Ω @ V
0.5Ω @ VGS = 2.5V
0.7Ω @ V
0.9Ω @ VGS = -2.5V
max
= 4.5V
GS
= -4.5V
GS
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
ESD PROTECTED
TO 2.5kV HB
SOT26
Top View
Product Line o
Diodes Incorporated
DMC2700UDM
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features and Benefits
I
max
D
= 25°C
T
A
(Notes 4)
1.34 A
1.65 A
-1.14 A
-0.94 A
• Low On-Resistance
• Low Gate Threshold Voltage V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Gate to 2.5kV HBM
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
GS(th)
< 1V
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
• Portable electronics
D
S
D1
G1
S1
Device symbol
G2
D2
S2
G1
Top view
S2
Pin-Out
G2
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMC2700UDM-7 C27 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
C27
YM
DMC2700UDM
Datasheet Number: DS35360 Rev. 1 - 2
C27 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
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f
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Diodes Incorporated
DMC2700UDM
Maximum Ratings N-CHANNEL – Q1 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 4)
= 25°C
T
A
= 85°C
T
A
V
DSS
V
GSS
I
D
20 V
±6
1.34
0.97
V
A
Maximum Ratings P-CHANNEL – Q2 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 4)
NEW PRODUCT
= 25°C
T
A
= 85°C
T
A
V
DSS
V
GSS
I
D
-20 V
±6
-1.14
-1.07
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Notes: 4. For a device mounted on 25mm X 25mm FR-4 PCB board with a high coverage of single sided 1oz copper, in still air conditions with two active die
P
D
R
JA
, T
T
J
STG
1.12 W
111
-55 to +150
°C/W
°C
DMC2700UDM
Datasheet Number: DS35360 Rev. 1 - 2
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June 2011
© Diodes Incorporated
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)
Electrical Characteristics N-CHANNEL – Q
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
NEW PRODUCT
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Characteristic Symbol Min Typ Max Unit Test Condition
@T
1
A
BV
DSS
I
⎯ ⎯
DSS
I
⎯ ⎯
GSS
V
GS(th
20
0.5
⎯
R
DS (ON)
⎯
⎯
|Y
| ⎯
fs
V
C
C
C
Q
Q
t
d(on
t
d(off
SD
iss
oss
rss
Q
s
d
t
t
f
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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Diodes Incorporated
= 25°C unless otherwise specified
⎯ ⎯
100 nA
± 1.0 μA
⎯
0.3
0.4
0.5
1.4
0.7 1.2 V
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
1.0 V
0.4
0.5
0.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DMC2700UDM
V
V
= 0V, ID = 250μA
GS
V
= 20V, VGS = 0V
DS
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 600mA
Ω
S
pF
pF
pF
pC
ns
GS
V
= 2.5V, ID = 500mA
GS
= 1.8V, ID = 350mA
V
GS
VDS =10V, ID = 400mA
V
= 0V, IS = 150mA
GS
V
= 16V, VGS = 0V
DS
f = 1.0MHz
= 4.5V, VDS = 10V,
V
GS
= 250mA
I
D
V
= 10V, VGS = 4.5V,
DD
R
= 47Ω, RG = 10Ω,
L
= 200mA
I
D
Electrical Characteristics P-CHANNEL – Q2 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
-20
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
-100 nA
± 1.0 μA
V
= 0V, ID = -250μA
GS
V
= -20V, VGS = 0V
DS
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
⎯
-0.5
⎯
⎯
⎯
0.5
0.7
1.0
-0.9
-0.8 -1.2 V
-1.0 V
0.7
0.9
1.3
⎯
VDS = VGS, ID = -250μA
V
V
Ω
V
S
VDS =10V, ID = -250mA
VGS = 0V, IS = -150mA
= -4.5V, ID = -430mA
GS
= -2.5V, ID = -300mA
GS
= -1.8V, ID = -150mA
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
C
C
C
Q
Q
t
d(on
t
d(off
iss
oss
rss
Q
t
t
⎯
⎯
⎯
⎯
⎯
s
⎯
d
⎯
⎯
⎯
⎯
f
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
pC
ns
= -16V, VGS = 0V
V
DS
f = 1.0MHz
= -4.5V, VDS = -10V,
V
GS
= -250mA
I
D
= -10V, VGS = -4.5V,
V
DD
= 47Ω, RG = 10Ω,
R
L
I
= -200mA
D
DMC2700UDM
Datasheet Number: DS35360 Rev. 1 - 2
3 of 9
www.diodes.com
June 2011
© Diodes Incorporated
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