Diodes DMC2400UV User Manual

DMC2400UV

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

SOT563

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• ESD Protected Gate to 2kV HBM

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device, Halogan and Antimony Free (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.003 grams (approximate)

Product Summary

max

Device

(BR)DSS

DS(ON)

0.5 @ V

max

= 4.5V

Q1 20V

0.9 @ VGS = 1.8V

1.0 @ V

= -4.5V

Q2 -20V

2.0 @ VGS = -1.8V

Description and Applications

NEW PRODUCT

This new generation MOSFET has been designed to minimize the on-state resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

ADVANCE INFORMATION

applications.

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Load switch

ESD PROTECTED TO 2kV

TA = 25°C

1030mA

740mA

-700mA

-460mA

Top View Bottom View Equivalent Circuit

Ordering Information (Note 3)

Part Number Case Packaging

DMC2400UV-7 SOT563 3000/Tape & Reel

DMC2400UV-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

CA3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMC2400UV

Document number: DS35537 Rev. 6 - 2

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www.diodes.com

February 2012

DMC2400UV

Maximum Ratings - Q1 N-CHANNEL @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 1.8V

Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode continuous Current

NEW PRODUCT

Steady

State

t<10s

Steady

State

t<10s

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

DSS

GSS

20 V

±12 V

1030

800

1150

900 740

570 870

700

3 A

800 mA

ADVANCE INFORMATION

Maximum Ratings - Q2 P-CHANNEL @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode continuous Current

Steady

State

t<10s

Steady

State

t<10s

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

DSS

GSS

-20 V ±8 V

-700

-550

-820

-640

-460

-350

-550

-420

-2 A

-800 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range

DMC2400UV

Document number: DS35537 Rev. 6 - 2

Steady state

t<10s 210 °C/W

Steady state

t<10s 97 °C/W

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J, TSTG

0.45 W 281 °C/W

1 W

129 °C/W

-55 to +150 °C

February 2012

)

RAIN C

URR

CUR

Electrical Characteristics - Q1 N-CHANNEL @T

= 25°C unless otherwise specified

DMC2400UV

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I

Gate-Source Leakage

DSS

GSS

DSS

20 - - V

- - 100 nA

- - ±1

- - ±4.0

VGS = 0V, ID = 1mA VDS = 20V, VGS = 0V

= ±5V, VDS = 0V

μA

= ±8V, VDS = 0V

ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance

NEW PRODUCT

Forward Transfer Admittance Diode Forward Voltage

GS(th

DS (ON)

|Y V

0.5 - 0.9 V

- 0.3 0.48

- 0.35 0.5

- 0.45 0.7

- 0.55 0.9

- 0.65 1.5

- 2 -

- 1.4 - S

- 0.7 1.2 V

VDS = VGS, ID = 250A V

= 5.0V, ID = 200mA

= 4.5V, ID = 200mA

= 2.5V, ID = 200mA

= 1.8V, ID = 100mA

= 1.5V, ID = 50mA

= 1.2V, ID = 1mA

VDS = 3V, ID = 200mA VGS = 0V, IS = 500mA,

DYNAMIC CHARACTERISTICS (Note 7)

ADVANCE INFORMATION

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

oss

rss

Q Q Q

D(on)

D(off)

iss

s d

- 37.1 -

- 6.5 -

- 4.8 -

- 68 -

- 0.5 -

- 0.07 -

- 0.1 -

4.06

7.28

13.74

10.54

= 10V, VGS = 0V,

f = 1.0MHz VDS = 0V, VGS = 0V,

= 4.5V, VDS = 10V,

= 250mA

= 10V, VGS = 4.5V,

= 47, RG = 10,

= 200mA

2.0

V = 4.5V

V = 2.5V

1.5

V = 5V

1.5

(A) E

1.0

V = 2.0V

V = 1.8V

(A) EN

1.0

AIN

0.5

I, D

0.5

012345

V , DRAIN-SOURCE VOLTAGE (V)

V = 1.5V

V = 1.2V

I, D

0 0.5 1 1.5 2 2.5 3

Fig. 1 Typical Output Characteristics

DMC2400UV

Document number: DS35537 Rev. 6 - 2

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T = 150°C

T = 125°C

T = 85°C

V , GATE SOURCE VOLT AGE (V)

T = 25°C

T = -55°C

Fig. 2 Typical Transfer Characteristics

February 2012

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