Page 1
DMC2400UV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
SOT563
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage V
GS(th)
<1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Gate to 2kV HBM
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device, Halogan and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.003 grams (approximate)
D
G
1
Q
1
S
1
S
2
2
Q
2
D
G
2
1
Product Summary
I
max
Device
V
R
(BR)DSS
DS(ON)
0.5 @ V
max
= 4.5V
GS
Q1 20V
0.9 @ VGS = 1.8V
1.0 @ V
= -4.5V
GS
Q2 -20V
2.0 @ VGS = -1.8V
Description and Applications
NEW PRODUCT
This new generation MOSFET has been designed to minimize the
on-state resistance (R
) and yet maintain superior switching
DS(on)
performance, making it ideal for high efficiency power management
ADVANCE INFORMATION
applications.
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Load switch
ESD PROTECTED TO 2kV
D
TA = 25°C
1030mA
740mA
-700mA
-460mA
Top View Bottom View Equivalent Circuit
Ordering Information (Note 3)
Part Number Case Packaging
DMC2400UV-7 SOT563 3000/Tape & Reel
DMC2400UV-13 SOT563 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
CA3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMC2400UV
Document number: DS35537 Rev. 6 - 2
1 of 10
www.diodes.com
February 2012
© Diodes Incorporated
Page 2
DMC2400UV
Maximum Ratings - Q1 N-CHANNEL @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 1.8V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
NEW PRODUCT
Steady
State
t<10s
Steady
State
t<10s
T
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
20 V
±12 V
1030
800
1150
900
740
570
870
700
mA
mA
mA
mA
3 A
800 mA
ADVANCE INFORMATION
Maximum Ratings - Q2 P-CHANNEL @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -1.8V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
t<10s
Steady
State
t<10s
= 25°C
T
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
-20 V
±8 V
-700
-550
-820
-640
-460
-350
-550
-420
mA
mA
mA
mA
-2 A
-800 mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
DMC2400UV
Document number: DS35537 Rev. 6 - 2
Steady state
t<10s 210 °C/W
Steady state
t<10s 97 °C/W
2 of 10
www.diodes.com
P
R
P
R
T
J, TSTG
D
JA
θ
D
JA
θ
0.45 W
281 °C/W
1 W
129 °C/W
-55 to +150 °C
February 2012
© Diodes Incorporated
Page 3
)
g
g
g
g
r
RAIN C
URR
N
T
R
CUR
R
T
Electrical Characteristics - Q1 N-CHANNEL @T
= 25°C unless otherwise specified
A
DMC2400UV
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 - - V
- - 100 nA
- - ±1
- - ±4.0
VGS = 0V, ID = 1mA
VDS = 20V, VGS = 0V
= ±5V, VDS = 0V
V
μA
GS
V
= ±8V, VDS = 0V
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
NEW PRODUCT
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 - 0.9 V
- 0.3 0.48
- 0.35 0.5
- 0.45 0.7
- 0.55 0.9
- 0.65 1.5
- 2 -
|
- 1.4 - S
- 0.7 1.2 V
VDS = VGS, ID = 250A
V
= 5.0V, ID = 200mA
GS
V
= 4.5V, ID = 200mA
GS
V
= 2.5V, ID = 200mA
Ω
GS
V
= 1.8V, ID = 100mA
GS
V
= 1.5V, ID = 50mA
GS
= 1.2V, ID = 1mA
V
GS
VDS = 3V, ID = 200mA
VGS = 0V, IS = 500mA,
DYNAMIC CHARACTERISTICS (Note 7)
ADVANCE INFORMATION
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
C
C
oss
C
rss
R
Q
Q
Q
t
D(on)
t
t
D(off)
t
iss
s
d
f
- 37.1 -
- 6.5 -
- 4.8 -
- 68 -
- 0.5 -
- 0.07 -
- 0.1 -
4.06
-
7.28
-
13.74
-
10.54
-
= 10V, VGS = 0V,
V
pF
Ω
nC
-
-
-
ns
-
DS
f = 1.0MHz
VDS = 0V, VGS = 0V,
= 4.5V, VDS = 10V,
V
GS
= 250mA
I
D
V
= 10V, VGS = 4.5V,
DD
R
= 47, RG = 10,
L
I
= 200mA
D
2.0
V = 4.5V
GS
V = 2.5V
GS
1.5
V = 5V
DS
1.5
(A)
E
1.0
V = 2.0V
GS
V = 1.8V
GS
(A)
EN
1.0
AIN
0.5
D
D
I, D
0.5
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 1.5V
GS
V = 1.2V
GS
I, D
0
0 0.5 1 1.5 2 2.5 3
Fig. 1 Typical Output Characteristics
DMC2400UV
Document number: DS35537 Rev. 6 - 2
3 of 10
www.diodes.com
T = 150°C
A
T = 125°C
A
T = 85°C
A
V , GATE SOURCE VOLT AGE (V)
GS
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
© Diodes Incorporated
February 2012
Page 4
R
R
N
OUR
CE O
N-R
TAN
C
R
R
OUR
C
R
RAIN-SOUR
CE O
N-R
TAN
C
O
U
R
C
C
U
R
RENT
2.0
Ω
0.8
Ω
E ( )
V = 4.5V
GS
DMC2400UV
1.6
0.6
V = 1.5V
1.2
GS
0.4
0.8
ESIS
V = 1.8V
GS
V = 2.5V
GS
0.4
V = 4.5V
V = 5.0V
GS
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
NEW PRODUCT
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 0.4 0.8 1.2 1.6 2
vs. Drain C urrent an d G at e Vol t age
ADVANCE INFORMATION
1.6
1.4
GS
V = 4.5V
GS
I = 1.0A
D
E
V = 2.5.V
GS
I = 500mA
1.2
D
AIN-S
, D
1.0
-S
AI
0.2
, D
DS(ON)
0
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
Ω
E ( )
0.6
ESIS
V = 2.5V
0.4
GS
I = 500mA
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
DS(ON)
0.8
ON-RE SISTANCE (NO RMALI ZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with Temperature
1.2
0.2
V = 4.5V
GS
I = 1.0A
, D
DS(ON)
D
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On- R esistance Variat ion with Temperatur e
1.6
1.0
T = 25°C
A
0.8
0.6
I = 250µA
D
I = 1mA
D
1.2
(A)
0.8
E
0.4
S
0.4
I, S
0.2
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMC2400UV
Document number: DS35537 Rev. 6 - 2
A
4 of 10
www.diodes.com
0
0.2
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Dio de Forwar d Voltag e vs. Curre nt
February 2012
© Diodes Incorporated
Page 5
C, CAPACITAN
C
F
R
OUR
C
GE CUR
RENT
R
CUR
RENT
60
1,000
(nA)
50
)
40
E (p
C
iss
30
f = 1MHz
100
10
E LEAKA
DMC2400UV
T = 150°C
A
T = 125°C
A
T = 85°C
A
20
T = 25°C
1
10
NEW PRODUCT
0
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
ADVANCE INFORMATION
Fig. 9 Typical Capacitance
C
oss
C
rss
5
AIN-S
0.1
DSS
I, D
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-S ource Volta ge
10
A
T = -55°C
A
P = 100µs
W
4
V = 10V
DS
I = 250mA
D
1
(A)
3
0.1
2
1
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Q , TOTAL GATE CHARGE (nC)
g
AIN
D
I, D
0.01
0.001
0.01 0.1 1 10 100
Fig. 11 Gate-Charge Characteristics
DMC2400UV
Document number: DS35537 Rev. 6 - 2
5 of 10
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R
DS(on)
Limited
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 12 SOA, Safe Operation Area
P = 10sWµ
February 2012
© Diodes Incorporated
Page 6
)
g
g
g
r
RAIN
CUR
R
N
T
RAIN C
U
R
REN
T
Electrical Characteristics - Q2 P-CHANNEL @T
= 25°C unless otherwise specified
A
DMC2400UV
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-20 - - V
- - -100 nA
- - ±1.0
- - ±5.0
VGS = 0V, ID = -1mA
VDS = -20V, VGS = 0V
= ±5V, VDS = 0V
V
μA
GS
V
= ±8V, VDS = 0V
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS(th
R
DS (ON)
NEW PRODUCT
Forward Transfer Admittance
Diode Forward Voltage
ADVANCE INFORMATION
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = -4.5V Qg
Total Gate Charge VGS = -10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
1.0
|Y
V
SD
C
C
oss
C
R
Q
Q
t
D(on)
t
t
D(off)
t
fs
iss
rss
f
-0.5 - -1.0 V
- 0.67 0.97
0.7 1.0
- 0.9 1.5
- 1.2 2.0
- 1.5 3.0
- 5 -
|
- 0.7 - S
- -0.75 -1.2 V
- 46.1 -
- 7.2 -
- 4.9 -
- 14.3 -
- 0.5 -
- 0.85 -
s
d
- 0.09 -
- 0.09 -
-
-
-
-
8.5
4.3
20.2
19.2
-
-
-
-
1.0
VDS = VGS, ID = -250A
V
= -5V, ID = -100mA
GS
V
= -4.5V, ID = -100mA
GS
V
= -2.5V, ID = -80mA
Ω
GS
V
= -1.8V, ID = -40mA
GS
= -1.5V, ID = -30mA
V
GS
= -1.2V, ID = -1mA
V
GS
VDS = -3V, ID = -100mA
VGS = 0V, IS = -330mA,
= 10V, VGS = 0V,
V
pF
Ω
nC
ns
DS
f = 1.0MHz
VDS = 0V, VGS = 0V,
= -10V, ID = -250mA
V
DS
V
= -3V, VGS = -2.5V,
DD
= 300, RG = 25,
R
L
I
= -100mA
D
0.8
(A)
E
0.6
0.8
(A)
0.6
0.4
D
-I , D
0.2
0
012345
-V , DRAIN -SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Output Characteristics
DMC2400UV
Document number: DS35537 Rev. 6 - 2
6 of 10
www.diodes.com
0.4
D
-I , D
0.2
T = 125C
°
A
0
01 2 34
-V , GATE SOURCE VOLTAGE(V)
GS
Fig. 14 Typical Transfer Characteristics
February 2012
© Diodes Incorporated
Page 7
O
O
R
R
OUR
ON-R
R
RAIN-SOUR
C
R
RAIN-SOUR
CE O
N-R
TAN
C
G
T
THR
H
O
O
T
G
OUR
C
CUR
R
T
2.0
Ω
1.8
Ω
DMC2400UV
1.6
1.4
V=1.8V
-
1.2
N-RESISTANCE( )
1.0
URCE
0.8
0.6
GS
V=2.5V
-
GS
V = -4.5V
GS
0.4
0.2
DS(ON)
NEW PRODUCT
R ,DRAIN-S
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-I , DRAIN SOURCE CURRENT
D
Fig. 15 Typical On-Resistance vs .
ADVANCE INFORMATION
Drain Curr ent and G ate V oltage
1.6
ESISTANCE( )
T = 150°C
A
CE
AIN-S
, D
DS(ON)
0.01 0.1 1 10
-I , DRAIN SOURCE CURRENT (A)
D
Fig. 16 Typical On-Resistance vs.
Drain Curr ent and Tempera tu re
2.0
Ω
E ( )
1.4
E
1.5
ESIS
1.2
1.0
, D
1.0
DS(ON)
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 17 On-Resistance Variation with Temperature
1.0
E (V)
0.8
A
I= 300A
μ
D
L
I= 250A
0.6
LD V
μ
D
ES
0.4
°
0.5
, D
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 18 On-Resistance vs.Temperature
1.0
0.8
(A)
EN
T= 25C
°
0.6
A
E
0.4
E
A
0.2
GS(th)
-V ,
0
-50-250255075100125150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 19 Gate Threshold Variation vs. Ambient T emperature
DMC2400UV
Document number: DS35537 Rev. 6 - 2
7 of 10
www.diodes.com
S
-I , S
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 20 Diode Forward Voltage vs. Current
February 2012
© Diodes Incorporated
Page 8
C
UNC
TION CAPACITANC
F
GE CUR
R
T
R
CUR
RENT
T
R
T T
HER
R
T
C
80
f = 1MHz
1,000
)
E (p
60
100
(nA)
DMC2400UV
T = 1A50 C
°
T = 1A25 C
°
EN
C
40
20
, J
T
NEW PRODUCT
0
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Junction Capacitance
ADVANCE INFORMATION
8
7
V = -10V
6
DS
I = -250mA
D
5
4
3
2
GS
V , GATE-SOURCE VOLTAGE (V)
1
iss
10
T = 8A5C
°
T = 2A5C
°
1
DSS
C
oss
C
rss
-I , LEAKA
0.1
048121620
-V , DRAIN-SOURCE VOLTAGE(V)
DS
Fig. 22 Typical Drain-Source Leakage Current vs. Voltage
10
(A)
AIN
D
-I , D
0.1
0.01
P = 100µs
W
1
R
DS(on)
Limited
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 10sWµ
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Q , TOTAL GATE CHARGE (nC)
g
Fig. 23 Gate-Charge Characteristics
1
E
D = 0.7
D = 0.5
AN
D = 0.3
0.001
0.01 0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 24 SOA, Safe Operation Area
ESIS
0.1
MAL
0.01
ANSIEN
r(t),
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 275°C/W
θ
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA
Duty Cycle, D = t /t
R
θ
JA
θ
12
0.001
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.00001
t , PULSE DURATION TIME (s)
1
Fig. 25 Transient Thermal Response
DMC2400UV
Document number: DS35537 Rev. 6 - 2
8 of 10
www.diodes.com
February 2012
© Diodes Incorporated
Page 9
DMC2400UV
Package Outline Dimensions
NEW PRODUCT
ADVANCE INFORMATION
K
A
B
C
D
G
M
H
L
Dim Min Max Typ
SOT563
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Suggested Pad Layout
G
Z
Y
DMC2400UV
Document number: DS35537 Rev. 6 - 2
X
C2
C2
C1
www.diodes.com
9 of 10
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
February 2012
© Diodes Incorporated
Page 10
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
NEW PRODUCT
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMC2400UV
DMC2400UV
Document number: DS35537 Rev. 6 - 2
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www.diodes.com
February 2012
© Diodes Incorporated
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