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DMC2038LVT
User Manual
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Diodes DMC2038LVT User Manual

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Product Summary
I
Device
V
(BR)DSS
Q1 20V
Q2 -20V
R
35m @ V
56m @ VGS = 1.8V
74m @ V
168m @ VGS = -1.8V
DS(ON)
GS
GS
= 4.5V
= -4.5V
D
TA = +25°C
4.5A
3.5A
-3.1A
-2.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
DC-DC Converters
Backlighting
TSOT26
Top View
1
G1
2
S2
3
G2
Top View
Pin Configuration
6
5
4
Ordering Information (Note 4)
DMC2038LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections Indicator: See diagram
Weight: 0.013 grams (approximate)
Q1
D1
D1
S1
D2
G1
S1
G2
Q2
D2
S2
P-Channel N-Channel
Part Number Compliance Case Packaging
DMC2038LVT-7 Standard TSOT26 3000/Tape & Reel
DMC2038LVTQ-7 Automotive TSOT26 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
31C = Product Type Marking Code
31C
YM
YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September)
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Maximum Ratings N-CHANNEL – Q1 (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
t<10s
Steady
Continuous Drain Current (Note 6) VGS = 4.5V
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Ratings P-CHANNEL – Q2 (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Steady
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
State
t<10s
Steady
State
t<10s
= +25°C, unless otherwise specified.)
A
V
DSS
V
GSS
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
= +25°C, unless otherwise specified.)
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
I
D
I
D
I
D
I
D
I
S
I
DM
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
DMC2038LVT
20 V
±12 V
3.7
3.0
4.1
3.2
4.5
3.6
5.2
4.2
1.5 A
25 A
-20 V
±12 V
-2.6
-2.1
-2.9
-2.4
-3.1
-2.5
-3.8
-3.0
-1.5 A
-17 A
A
A
A
A
A
A
A
A
Characteristic Symbol Value Units
= +25°C
T
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
A
TA = +70°C
Steady State
t<10s 120
= +25°C
T
A
TA = +70°C
Steady State
t<10s 72
P
R
P
R
R
T
J, TSTG
JA
JC
D
JA
D
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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0.8
0.5
168
1.1
0.7
W
°C/W
W
114
°C/W
39
-55 to +150 °C
September 2013
© Diodes Incorporated
R
CUR
R
T
R
C
URR
T
Electrical Characteristics N-CHANNEL – Q1 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7 )
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
(A)
EN
30
25
20
V =4.0V
GS
V =3.5V
GS
V=10V
GS
V =4.5V
GS
V =3.0V
GS
V =2.5V
GS
15
BV
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
V
C
C
C
Q
Q
t
D(on)
t
D(off)
R
DSS
fs
SD
iss
oss
rss
g
gs
gd
t
r
t
f
|
= +25°C, unless otherwise specified.)
A
20
— —
— —
—
— V
1.0 A
±100 nA
0.4 — 1.0 V
—
—
—
—
27 35
33 43
m
43 56
9 — S
0.4 — 1.1 V
—
—
—
—
—
—
—
—
—
—
—
—
400 530 pF
70 90 pF
65 100 pF
1.9
5.7
—
—
nC
12 17 nC
0.7
1.4
—
—
nC
nC
5 10 ns
8 16 ns
25 40 ns
8 16 ns
20
V = 5.0V
DS
T = -55CA
15
(A)
T = 25CA
EN
10
DMC2038LVT
VGS = 0V, ID = 250A
VDS =16V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 4.0A
GS
V
= 2.5V, ID = 2.5A
GS
V
= 1.8V, ID = 1.5A
GS
VDS = 5V, ID = 3.4A
VGS = 0V, IS = 1A
VDS = 10V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
= 15V,ID = 5.8A
V
DS
= 10V, VGS = 4.5V,
V
DS
= 6, IDS = 1A,
R
G
T = 85CA
T = 150CA
T = 125CA
AIN
D
I, D
10
V =2.0V
GS
AIN
D
I, D
5
5
V =1.5V
0
0 0.5 1 1.5 2
V , DRAIN -SOURCE VOLTAGE(V)
DS
GS
Fig. 1 Typical Output Characteristics
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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0
0 0.5 1 1.5 2 2.5 3
V , GATE SOURCE VOLTAGE(V)
GS
Fig. 2 Typical Transfer Characteristics
September 2013
© Diodes Incorporated
R,DR
O
URCE ON-R
TANC
R
R
OUR
ON-R
R
R
OUR
CE ON-R
TANC
G
R
OLD VO
G
OUR
C
CUR
R
0.08
E( )
0.07
0.06
ESIS
0.05
0.04
0.03
AIN-S
0.02
V = 1.8VGS
V = 2.5VGS
V = 4.5VGS
ESISTANCE( )
CE
AIN-S
0.08
0.06
0.04
0.02
V = 4.5V
GS
T = 85CA
, D
DMC2038LVT
T = 150CA
T = 125CA
T = 25CA
T = -55CA
0.01
DS(ON)
0
0 5 10 15 20
I , DRAIN SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
1.5
DS(ON)
0
0 4 8 12 16 20
I , DRAIN SOURCE CURRENT (A)
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.06
E ( )
0.05
V=5V
GS
I=5A
D
1.3
1.1
(Normalized)
0.9
0.7
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
1.5
E(V)
LTA
1
I=1mA
D
ESH
0.5
ATE T H
GS(TH)
V,
I =250µA
D
0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
ESIS
0.04
0.03
V =10V
GS
I=10A
D
0.02
AIN-S
, D
0.01
DS(ON)
0
-50 -25 0 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (C)
J
Fig. 6 On-Resistance Variation with Temperature
20
18
16
14
ENT (A)
12
10
E
T= 25CA
8
6
S
I, S
4
2
0
0.2 0.4 0.6 0.8 1 1.2 1.4
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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C
U
C
TION C
CIT
C
RAIN CUR
REN
T
T
R
T
T
H
R
R
TANC
1000
f = 1MHz
C
ISS
10
8
DMC2038LVT
E (pF)
V =15V
AN
APA
100
6
C
OSS
C
RSS
4
DS
N
, J
T
10
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
100
R
DS(on)
10
Limited
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
02468101214
Q , TOTAL GATE CHARGE (nC)
g
Fig. 10 Gate-Charge Characteristics
(A)
DC
1
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
D
I, D
0.1
T = 150°C
J(max)
T = 25°C
A
V = 10V
GS
Single Pulse DUT on 1 * MRP Board
0.01
0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)
DS
P = 1ms
W
P = 100µs
W
Fig. 11 SOA, Safe Oper ation Area
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
R (t) = r(t) * R

JA JA
R = 164°C/W
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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R
C
U
R
R
T
R
CUR
RENT
Electrical Characteristics P-CHANNEL – Q2 (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effec
8. Guaranteed by design. Not subject to product testing.
20
-V =10V
GS
-V =4. 5V
GS
BV
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
V
C
C
C
Q
Q
t
D(on)
t
D(off)
R
DSS
fs
SD
iss
oss
rss
g
gs
gd
t
r
t
f
|
= +25°C, unless otherwise specified.)
A
-20
— —
— —
—
— V
-1.0 A
±100 nA
-0.4 — -1.0 V
—
—
—
—
—
57 74
76 110
m
102 168
10 — S
-0.8 -1.0 V
— 530 705 pF
—
—
—
—
—
—
—
—
—
—
—
70 95 pF
60 90 pF
72 -
7 10 nC
14
0.95
1.2
—
—
—
nC
nC
nC
11 20 nS
12 22 nS
21 34 nS
13 23 nS
20
DMC2038LVT
VGS = 0V, ID = -250A
VDS = -16V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250A
V
= -4.5V, ID = -3.0A
GS
V
= -2.5V, ID = -1.5A
GS
V
= -1.8V, ID = -1.0A
GS
VDS = -5V, ID = -3.0A
VGS = 0V, IS = -0.6A
VDS = -10V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
= -15V,ID = -6A
V
DS
= -10V, VGS = -4.5V,
V
DS
= 6, IS = -1A,
R
G
15
(A)
-V =4. 0V
GS
-V =3.0V
GS
15
(A)
EN
-V =3. 5V
10
GS
AIN
D
5
-I , D
0
0 0.5 1 1.5 2
-V , DRAIN -SOURCE VOLTAGE(V)
DS
Fig. 13 Typical Output Characteristics
-V =2.5V
GS
-V =2.0V
GS
-V =1.5V
GS
10
AIN
D
I- , D
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V , GATE SOURCE VOLTAGE(V)
GS
Fig. 14 Typical Transfer C haracteristics
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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R
R
OUR
ON-R
R
R
OUR
CE ON-R
C
DMC2038LVT
0.16
0.20
0.18
V = 4.5V
GS
0.16
0.12
V= -1.8V
GS
V= -2.5V
GS
0.08
V= -4.5V
GS
0.04
0
0 5 10 15 20
-I , DRAIN SOURCE CURRENT
D
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
0.14
0.12
CE
0.1
T = 125 CA
0.08
0.06
AIN-S
, D
0.04
0.02
DS(ON)
0
048121620
-I , DRAIN SOURCE CURRENT (A)
D
T = 25CA
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
0.14
T = 150CA
T = 85CA
T = -55CA
ESISTANCE( )
E ( )
ESISTAN
0.12
0.1
-V =5V
GS
-I =5A
D
1.5
1.3
0.08
1.1
(Normalized)
0.9
0.7
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.5
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Fig. 17 On-Resistance Variation with Temperature
1.5
0.06
0.04
AIN-S
, D
0.02
DS(ON)
0
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance Variation with Temperature
20
-V =10V
GS
-I =10A
D
18
16
1
14
12
10
8
0.5
6
S
-I , SOURCE CURRENT (A) 4
GS(TH)
-V , GATE THRESHOLD VOLTAGE(V)
0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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2
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 20 Diode Forward Voltage vs. Current
September 2013
© Diodes Incorporated
C
UNC
T
O
N CAPAC
T
A
N
C
F
RAIN CUR
REN
T
T
R
T
T
HER
R
TANC
DMC2038LVT
1000
)
f = 1MHz
C
ISS
10
8
E (p
I
100
I
, J
T
C
RSS
10
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Junction Capacitance
100
C
OSS
6
Q vs. V
gGS
4
2
GS
-V , GATE-SOURCE VOLTAGE (V)
0
02468101214
Q , TOTAL GATE CHARGE (nC)
g
Fig. 22 Gate-Charge Characteristics
16
R
10
(A)
1
D
-I , D
0.1
0.01
0.1 1 10 100
DS(on)
Limited
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
T = 15 0°C
J(max)
T = 25°C
A
V = -10V
GS
Single Pulse DUT on 1 * MRP Board
-V , DRAIN-SOURCE VOLTAGE (V)
DS
W
P = 1ms
W
P = 100µs
W
Fig. 23 SOA, Safe Operation Area
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
R (t) = r(t) * R

JA JA
R = 164°C/W
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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© Diodes Incorporated
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1
A2
A
A1
D
e1
E
L
4x 1
e
6x b

L2
c
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C C
TSOT26
Dim Min Max Typ
A
A1 0.01 0.10 A2 0.84 0.90
D 2.85 2.95 2.90 E 2.70 2.90 2.80
E1 1.55 1.65 1.60
b 0.30 0.45 c 0.12 0.20 e BSC BSC 0.95
e1 BSC BSC 1.90
L 0.30 0.50
L2 BSC BSC 0.25
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
1.00
  
 
DMC2038LVT
Y1
Dimensions Value (in mm)
C 0.950 X 0.700 Y 1.000
Y1 3.199
Y (6x)
X (6x)
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
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© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMC2038LVT
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
10 of 10
www.diodes.com
September 2013
© Diodes Incorporated
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