Diodes DMC2020USD User Manual

A

f

20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Max

I

D

Device

Q1 20V

Q2 -20V

V

(BR)DSS

R

20mΩ @ V

28mΩ @ VGS = 2.5V 33mΩ @ V 45mΩ @ VGS = -2.5V

DS(on)

max

GS

= 4.5V

= -4.5V

TA = 25°C

(Notes 3 & 5)

8.5A

7.2A

-6.8A

-5.8A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Motor control

• DC-DC Converters

• Power management functions

• Notebook Computers and Printers

ESD PROTECTED TO 2kV

SO-8

G1

S2

G2

Top View

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Features and Benefits

• Reduced footprint with two discretes in a single SO8

• Low gate drive

• Low input capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 1)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Top View

D1S1

D1

D2

Drain

Body

Gate

Gate Protection Diode

Q1 N-Channel Q2 P-Channel

Diode

Source

Equivalent Circuit

Gate

Gate Protection Diode

Drain

Source

Body Diode

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC2020USD-13 C2020UD 13 12 2,500

Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.

Marking Information

DMC2020USD

Document number: DS32121 Rev. 4 - 2

C2020UD

YY

WW

= Manufacturer’s Marking C2020UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units

Drain-Source Voltage Gate-Source Voltage

(Notes 3 & 5)

Continuous Drain Current

V

GS

= 4.5V

TA = 70°C (Notes 3 & 5) (Notes 2 & 5) 6.5 -5.2 (Notes 2 & 6) 7.8 -6.3

Pulsed Drain Current

V

GS

= 4.5V

(Notes 4 & 5) Continuous Source Current (Body diode) (Notes 3 & 5) Pulsed Source Current (Body diode) (Notes 4 & 5)

V V

DSS GSS

ID

IDM

I

S

I

SM

20 -20

±10 ±10

8.5 -6.8

6.8 -5.4

33.6 -26.8

4.0 -4.0

33.6 -26.8

V

A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

(Notes 2 & 5) Power Dissipation

Linear Derating Factor

(Notes 2 & 6)

P

D

(Notes 3 & 5)

(Notes 2 & 5) Thermal Resistance, Junction to Ambient

(Notes 2 & 6)

R

θJA

(Notes 3 & 5) Thermal Resistance, Junction to Lead (Notes 5 & 7) Operating and Storage Temperature Range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

R

T

J, TSTG

θJL

1.25 10

1.8

14.3

W

mW/°C

2.14

17.2

100

70 58

°C/W

51

-55 to +150 °C

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Thermal Characteristics

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R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

I

10m

0.1 1 10

1s

100ms

Single Pulse T

= 25°C

amb

One active die

10ms

1ms

100us

VDS Drain-Source Voltage (V)

N-channel Safe Operating Area

25 mm x 25 mm

100

1oz FR4 One active die

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width ( s)

Single Pulse

D=0.05

D=0.1

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

-I

0.1 1 10

1s

100ms

Single Pulse T

= 25°C

amb

One active die

10ms

1ms

100us

-VDS Drain - So urce Voltage (V)

P-channel Safe Operating A rea

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

25 mm x 25 mm 1oz FR4

Two active die

One active die

Transient Thermal Impedance

Single Pulse T

100

10

amb

One active die

25 mm x 25 mm 1oz FR4

= 25°C

Deratin g C u rve

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width ( s)

Pulse Power Dissipation

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U

R

T

R

C

U

R

T

Electrical Characteristics – Q1 N-CHANNEL @T

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8) Forward Transfer Admittance (Notes 8 & 9)

Diode Forward Voltage (Note 8) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

I

S

C

iss

C

oss

C

rss

R Q Q

Q

s

Q

d

t

D(on)

t

D(off)

t

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= 25°C unless otherwise specified

A

20 - - V

- - 1.0

- - ±10

0.5 1.1 1.5 V

-

13 20 18 28

- 16 - S

- 0.7 1.2 V

- - 1.8 A -

- 1149 -

- 157 -

- 142 -

- 1.51 -

- 6.0 -

- 11.6 -

- 2.7 -

- 3.4 -

11.67

-

12.49

-

35.89

-

12.33

-

VGS = 0V, ID = 250μA

μA

VDS = 20V, VGS = 0V

μA

VGS = ±10V, VDS = 0V

VDS = VGS, ID = 250μA V

= 4.5V, ID = 7A

mΩ

GS

V

= 2.5V, ID = 3A

GS

VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A

V

= 10V, VGS = 0V,

pF

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz VGS = 2.5V

nC

ns

= 4.5V

V

GS

V

= 4.5V, VDS = 10V,

GS

= 6Ω , I

R

G

= 1A

D

V

DS

I

= 9.4A

D

= 10V

Typical Characteristics – Q1 N-CHANNEL

30

V = 10V

V = 4.5V

GS

V = 4.0V

GS

V = 3.5V

GS

V = 2.0V

GS

(A) EN

AIN

D

I, D

25

20

15

10

V = 3.0V

V = 2.5V

GS

5

V = 1.8V

GS

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Character i stics

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20

15

V = 5V

DS

(A) EN

10

AIN

T = 150°C

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLTAGE (V)

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

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