Diodes DMC2020USD User Manual

A

f

20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Max

I

D

Device

Q1 20V

Q2 -20V

V

(BR)DSS

R

20mΩ @ V

28mΩ @ VGS = 2.5V 33mΩ @ V 45mΩ @ VGS = -2.5V

DS(on)

max

GS

= 4.5V

= -4.5V

TA = 25°C

(Notes 3 & 5)

8.5A

7.2A

-6.8A

-5.8A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Motor control

• DC-DC Converters

• Power management functions

• Notebook Computers and Printers

ESD PROTECTED TO 2kV

SO-8

G1

S2

G2

Top View

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Features and Benefits

• Reduced footprint with two discretes in a single SO8

• Low gate drive

• Low input capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 1)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Top View

D1S1

D1

D2

Drain

Body

Gate

Gate Protection Diode

Q1 N-Channel Q2 P-Channel

Diode

Source

Equivalent Circuit

Gate

Gate Protection Diode

Drain

Source

Body Diode

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC2020USD-13 C2020UD 13 12 2,500

Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.

Marking Information

DMC2020USD

Document number: DS32121 Rev. 4 - 2

C2020UD

YY

WW

= Manufacturer’s Marking C2020UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units

Drain-Source Voltage Gate-Source Voltage

(Notes 3 & 5)

Continuous Drain Current

V

GS

= 4.5V

TA = 70°C (Notes 3 & 5) (Notes 2 & 5) 6.5 -5.2 (Notes 2 & 6) 7.8 -6.3

Pulsed Drain Current

V

GS

= 4.5V

(Notes 4 & 5) Continuous Source Current (Body diode) (Notes 3 & 5) Pulsed Source Current (Body diode) (Notes 4 & 5)

V V

DSS GSS

ID

IDM

I

S

I

SM

20 -20

±10 ±10

8.5 -6.8

6.8 -5.4

33.6 -26.8

4.0 -4.0

33.6 -26.8

V

A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

(Notes 2 & 5) Power Dissipation

Linear Derating Factor

(Notes 2 & 6)

P

D

(Notes 3 & 5)

(Notes 2 & 5) Thermal Resistance, Junction to Ambient

(Notes 2 & 6)

R

θJA

(Notes 3 & 5) Thermal Resistance, Junction to Lead (Notes 5 & 7) Operating and Storage Temperature Range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

R

T

J, TSTG

θJL

1.25 10

1.8

14.3

W

mW/°C

2.14

17.2

100

70 58

°C/W

51

-55 to +150 °C

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Thermal Characteristics

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R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

I

10m

0.1 1 10

1s

100ms

Single Pulse T

= 25°C

amb

One active die

10ms

1ms

100us

VDS Drain-Source Voltage (V)

N-channel Safe Operating Area

25 mm x 25 mm

100

1oz FR4 One active die

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width ( s)

Single Pulse

D=0.05

D=0.1

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

-I

0.1 1 10

1s

100ms

Single Pulse T

= 25°C

amb

One active die

10ms

1ms

100us

-VDS Drain - So urce Voltage (V)

P-channel Safe Operating A rea

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

25 mm x 25 mm 1oz FR4

Two active die

One active die

Transient Thermal Impedance

Single Pulse T

100

10

amb

One active die

25 mm x 25 mm 1oz FR4

= 25°C

Deratin g C u rve

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width ( s)

Pulse Power Dissipation

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R

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U

R

T

Electrical Characteristics – Q1 N-CHANNEL @T

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8) Forward Transfer Admittance (Notes 8 & 9)

Diode Forward Voltage (Note 8) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

I

S

C

iss

C

oss

C

rss

R Q Q

Q

s

Q

d

t

D(on)

t

D(off)

t

f

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= 25°C unless otherwise specified

A

20 - - V

- - 1.0

- - ±10

0.5 1.1 1.5 V

-

13 20 18 28

- 16 - S

- 0.7 1.2 V

- - 1.8 A -

- 1149 -

- 157 -

- 142 -

- 1.51 -

- 6.0 -

- 11.6 -

- 2.7 -

- 3.4 -

11.67

-

12.49

-

35.89

-

12.33

-

VGS = 0V, ID = 250μA

μA

VDS = 20V, VGS = 0V

μA

VGS = ±10V, VDS = 0V

VDS = VGS, ID = 250μA V

= 4.5V, ID = 7A

mΩ

GS

V

= 2.5V, ID = 3A

GS

VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A

V

= 10V, VGS = 0V,

pF

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz VGS = 2.5V

nC

ns

= 4.5V

V

GS

V

= 4.5V, VDS = 10V,

GS

= 6Ω , I

R

G

= 1A

D

V

DS

I

= 9.4A

D

= 10V

Typical Characteristics – Q1 N-CHANNEL

30

V = 10V

V = 4.5V

GS

V = 4.0V

GS

V = 3.5V

GS

V = 2.0V

GS

(A) EN

AIN

D

I, D

25

20

15

10

V = 3.0V

V = 2.5V

GS

5

V = 1.8V

GS

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Character i stics

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20

15

V = 5V

DS

(A) EN

10

AIN

T = 150°C

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLTAGE (V)

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

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RAIN-SOUR

CE O

N

R

T

N

C

R

OUR

CE ON-R

TANC

O

URC

C

URREN

T

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Ω

0.04

Ω

0.04

E ( ) A

0.03

ESIS

-

Diodes Incorporated

V = 4.5V

GS

DMC2020USD

0.02

V = 2.5V

GS

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

V = 4.5V

GS

vs. Drain C urrent and G ate V o l t age

1.6

1.4

1.2

V = 4.5V

1.0

GS

I = 10A

D

DS(ON)

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

V = 2.5V

GS

I = 5A

D

0.02

0.01

, D

DS(ON)

T = 150°C

A

T = 125°C

A

T = 85°C T = 25°C

T = -55°C

0

0 5 10 15 20

I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain C urrent and Tem per ature

0.04

Ω

E ( )

0.03

ESIS

V = 2.5V

GS

I = 5A

D

V = 4.5V

GS

I = 10A

D

AIN-S , D

0.02

0.01

A A

A

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On- Resistance Variation with Temperature

1.6

1.4

1.2

I = 1mA

1.0

0.8

I = 250µA

D

0.6

0.4

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient T emperature

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DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On- Resistance Variation with Temperatu r e

30

25

(A)

20

15

E

T = 25°C

A

10

S

I, S

5

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

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F

R

N-SOUR

C

GE C

URREN

T

OUR

C

OLTAG

G

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10,000

)

1,000

E (p

f = 1MHz

C

iss

100,000

(nA)

10,000

1,000

T = 150°C

A

C

oss

C

100

10

048121620

rss

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Capacitance

10

V = 10V

8

E(V)

DS

I = 9.4A

D

6

E V

4

E-S

2

GS

V, A

T = 125°C

E LEAKA

100

10

AI

DSS

1

I, D

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Drain-Source Leakage Current

A

T = 85°C

A

T = 25°C

A

vs. Drain-S ource Voltage

0

0 5 10 15 20 25

Q , OTAL GATE CHARGE (nC)

T

g

Fig. 11 Gate-Source Voltage vs. Total Gate Charge

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RAIN CUR

R

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Electrical Characteristics – Q2 P-CHANNEL

@TA

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 11) Forward Transfer Admittance (Note 11 & 12)

Diode Forward Voltage (Note 11) Continuous Source Current

V

GS(th

R

DS (ON)

|Y V

|

fs

SD

I

S

DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13)

Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

12. For design aid only, not subject to production testing.

13. Switching characteristics are independent of operating junction temperatures.

C C C

R Q

Q Q Q

t

D(on)

t

D(off)

iss oss rss

t

s d

f

= 25°C unless otherwise specified

-20 - - V

- - -1.0

- - ±10

-0.4 -0.7 -1.0 V

-

26 33 33 45

- 14 - S

- -0.7 -1.0 V

VGS = 0V, ID = -250μA

μA μA

= -20V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

VDS = VGS, ID = -250μA V

= -4.5V, ID = -6A

mΩ

GS

V

= -2.5V, ID = -3A

GS

VDS = -5V, ID = -4A VGS = 0V, IS = -1A

- - -1.8 A -

- 1610 -

- 157 -

- 145 -

- 9.45 -

- 8.0 -

- 15.4 -

- 2.5 -

pF

Ω

nC

= -10V, VGS = 0V,

V

DS

f = 1.0MHz

= 0V, VGS = 0V, f = 1MHz

V

DS

VGS = -2.5V

V

GS

= -4.5V

I

D

- 3.3 -

16.8

-

12.4

-

94.1

-

42.4

-

ns

V

= -4.5V, VDS = -10V,

GS

R

= 6Ω , ID = -1A

G

-

= -10V

DS

= -4A

Typical Characteristics – Q2 P-CHANNEL

30

V = -3.5V

25

(A)

20

E

15

V = -10V

GS

V = -4.5V

GS

V = -4.0V

GS

V = -2.5V

V = -3.0V

GS

V = -2.0V

GS

AI

10

D

-I , D

V = -1.8V

GS

5

0

0 0.5 1.0 1.5 2.0

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 Typical Output Characteristics

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20

V = -5V

DS

15

(A) E

10

D

-I , D

5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

T = 85°C

A

-V , GATE SOURCE VOLTAGE (V)

GS

T = 25°C

A

T = -55°C

A

Fig. 13 Typical Transfer Characteristics

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CE ON-R

TANC

R

RAIN-SOUR

CE O

N-R

T

N

C

R

OUR

C

R

OUR

CE ON-R

TANC

2

GAT

T

H

RESH

O

OLT

G

OUR

C

CUR

R

T

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Ω

E ( )

0.06

0.05

0.06

Ω

E ( )

0.05

A

Diodes Incorporated

V = 4.5V

GS

DMC2020USD

0.04

ESIS

-V = 2.5V

0.03

GS

-V = 4.5V

GS

0.02

AIN-S , D

0.01

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 14 Typical On-Resistance

vs. Drain C ur r ent and G at e Voltage

1.6

1.4

E

1.2

AIN-S , D

DS(ON)

-V = 4.5V

GS

-I = 10A

ON-RESISTANCE (NORMALIZED)

1.0

0.8

0.6

D

-V = 2.5V

GS

-I = 5A

D

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 16 On-Resistance Variation with T emperature

1.

0.04

ESIS

0.03

0.02

0.01

, D

DS(ON)

0

0 5 10 15 20

-I , DRAIN CURRENT (A)

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 15 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

0.06

Ω

E ( )

0.05

ESIS

0.04

-V = 2.5V

GS

-I = 5A

D

0.03

-V = 4.5V

GS

-I = 10A

D

AIN-S , D

DS(ON)

0.02

0.01

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 17 On-Resistance Variation with Temperature

30

E (V)

1.0

25

A

(A)

0.8

LD V

0.6

E

0.4

-I = 250µA

D

-I = 1mA

D

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 18 Gate Threshold Variation vs. Ambient Temperature

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20

EN

15

E

10

S

-I , S 5

0

0 0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 19 Diode Forward Voltage vs. Current

T = 25°C

A

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C

TANC

F

R

OUR

C

G

C

URRENT

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10,000

f = 1MHz

100,000

(nA)

Diodes Incorporated

DMC2020USD

)

C

1,000

E (p

iss

I A

100

10

048121620

-V , DRAIN-SOURCE VOLTAGE (V)

C

oss

C

rss

DS

Fig. 20 Typical Capacitance

10

V = -10V

8

DS

I = -4A

D

6

10,000

T = 150°C

A

E

1,000

E LEAKA

100

10

AIN-S

DSS

1

-I , D 0 5 10 15 20

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 21 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

T = 125°C

A

T = 85°C

A

T = 25°C

A

4

G

GS

2

-V , ATE-SOURCE VOLTAGE (V)

0

0 5 10 15 20 25 30 35

T

Q , OTAL GATE CHARGE (nC)

g

Fig. 22 Gate-Source Voltage vs. Total Gate Charge

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Package Outline Dimensions

DIM Inches Millimeters DIM Inches Millimeters

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h x 45°

Min. Max. Min. Max. Min. Max. Min.

Max.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20

θ

0° 8° 0° 8°

E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50

L 0.016 0.050 0.40 1.27 - - - - -

Suggested Pad Layout

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0.060

4.0

0.155

0.050

1.27

inches

mm

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

Diodes Incorporated

DMC2020USD

Document number: DS32121 Rev. 4 - 2

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www.diodes.com

February 2011