Diodes DMC2004VK User Manual

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• ESD Protected Gate

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

ESD protected

TOP VIEW



Green

DMC2004VK

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

SOT-563

Q

BOTTOM VIEW

D

1

1

S

1

TOP VIEW

Internal Schematic

G

2

G

1

e3

S

2

Q

2

D

2

Ordering Information (Note 4)

Part Number Case Packaging

DMC2004VK-7 SOT-563 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

CAB = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September

Date Code Key

Year 2007 2008 2009 2010 2011 2012

Code U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMC2004VK

Document number: DS30925 Rev. 6 - 2

1 of 8

www.diodes.com

January 2013

© Diodes Incorporated

)

Maximum Ratings N-CHANNEL – Q

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage

Drain Current (Note 5)

Maximum Ratings P-CHANNEL – Q

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage

Drain Current (Note 5)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

(@T

= +25°C, unless otherwise specified.)

A

1

V

DSS

V

GSS

= +25°C

T

A

= +85°C

T

A

(@T

= +25°C, unless otherwise specified.)

A

2

= +25°C

T

A

T

= +85°C

A

I

D

V

DSS

V

GSS

I

D

Steady state

t<10s 210 °C/W

Steady state

t<10s 97 °C/W

P

R

P

R

T

J, TSTG

DMC2004VK

20 V
±8

670
480

-20 V
±8

-530

-380

D

JA

θ

D

JA

θ

0.45 W
281 °C/W

1 W

129 °C/W

-55 to +150 °C

V

mA

V

mA

Electrical Characteristics N-CHANNEL – Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

20

⎯ ⎯

⎯ ⎯

⎯ ⎯

1.0 µA

± 1.0

V

V

= 0V, ID = 10µA

GS

V

= 16V, VGS = 0V

DS

µA

VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance (Note 8)
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5

⎯
⎯
⎯

200

|

0.5

⎯

0.4

0.5

0.7

⎯ ⎯
⎯

1.0 V

0.55

0.70

Ω

0.90

mS

1.2 V

VDS = VGS, ID = 250µA

= 4.5V, ID = 540mA

V

GS

= 2.5V, ID = 500mA

V

GS

V

= 1.8V, ID = 350mA

GS

VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

⎯ ⎯

iss

C

oss

C

rss

⎯ ⎯

⎯ ⎯

150 pF

25 pF
20 pF

V
f = 1.0MHz

= 16V, VGS = 0V

DS

DMC2004VK

Document number: DS30925 Rev. 6 - 2

2 of 8

www.diodes.com

January 2013

© Diodes Incorporated

)

RAIN CUR

REN

T

RAIN CUR

REN

T

GAT

E

THR

ESH

O

OLT

A

G

E

Electrical Characteristics P-CHANNEL – Q2 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C
C
C

Q1, N-CHANNEL

= +25°C, unless otherwise specified.)

A

-20

DSS

⎯ ⎯

DSS

⎯ ⎯

GSS

-0.5

⎯

200

|

fs

-0.5

SD

⎯ ⎯

iss

⎯ ⎯

oss

⎯ ⎯

rss

⎯ ⎯

-1.0 µA

± 1.0

⎯

0.7

1.1

1.7

-1.0 V

0.9

1.4

2.0

⎯ ⎯
⎯

-1.2 V

175 pF

30 pF
20 pF

DMC2004VK

V

V

= 0V, ID = -250µA

GS

V

= -20V, VGS = 0V

DS

µA

VGS = ±4.5V, VDS = 0V

VDS = VGS, ID = -250µA

= -4.5V, ID = -430mA

V

GS

V

Ω

mS

= -2.5V, ID = -300mA

GS

= -1.8V, ID = -150mA

V

GS

VDS =10V, ID = 0.2A
VGS = 0V, IS = -115mA

= -16V, VGS = 0V

V

DS

f = 1.0MHz

(V)

LD V

(A)

D

I, D

(A)

D

I, D

0

0

V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

GS(th)

V,

T , AMBIENT TEMPERATURE (°C)

A

Fig. 3 Gate Threshold Voltage

vs. Ambient Temperature

DMC2004VK

Document number: DS30925 Rev. 6 - 2

3 of 8

www.diodes.com

I , DRAIN CURRENT (A)

D

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

© Diodes Incorporated

January 2013