Diodes DMC2004VK User Manual

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• ESD Protected Gate

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

ESD protected

TOP VIEW



Green

DMC2004VK

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

SOT-563

Q

BOTTOM VIEW

D

1

S

1

TOP VIEW

Internal Schematic

G

2

G

1

e3

S

2

Q

2

D

2

Ordering Information (Note 4)

Part Number Case Packaging

DMC2004VK-7 SOT-563 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

CAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September

Date Code Key

Year 2007 2008 2009 2010 2011 2012

Code U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

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Document number: DS30925 Rev. 6 - 2

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Maximum Ratings N-CHANNEL – Q

Characteristic Symbol Value Unit

Drain Source Voltage Gate-Source Voltage

Drain Current (Note 5)

Maximum Ratings P-CHANNEL – Q

Characteristic Symbol Value Unit

Drain Source Voltage Gate-Source Voltage

Drain Current (Note 5)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

(@T

= +25°C, unless otherwise specified.)

A

1

V

DSS

V

GSS

= +25°C

T

A

= +85°C

T

A

(@T

= +25°C, unless otherwise specified.)

A

2

= +25°C

T

A

T

= +85°C

A

I

D

V

DSS

V

GSS

I

D

Steady state

t<10s 210 °C/W

Steady state

t<10s 97 °C/W

P

R

P

R

T

J, TSTG

DMC2004VK

20 V ±8

670 480

-20 V ±8

-530

-380

D

JA

θ

D

JA

θ

0.45 W 281 °C/W

1 W

129 °C/W

-55 to +150 °C

V

mA

V

mA

Electrical Characteristics N-CHANNEL – Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I I

DSS

GSS

20

⎯ ⎯

1.0 µA

± 1.0

V

= 0V, ID = 10µA

GS

V

= 16V, VGS = 0V

DS

µA

VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance (Note 8) Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

0.5

⎯ ⎯ ⎯

200

|

0.5

⎯

0.4

0.5

0.7

⎯ ⎯ ⎯

1.0 V

0.55

0.70

Ω

0.90

mS

1.2 V

VDS = VGS, ID = 250µA

= 4.5V, ID = 540mA

V

GS

= 2.5V, ID = 500mA

V

GS

V

= 1.8V, ID = 350mA

GS

VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

⎯ ⎯

iss

C

oss

C

rss

⎯ ⎯

150 pF

25 pF 20 pF

V f = 1.0MHz

= 16V, VGS = 0V

DS

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RAIN CUR

REN

T

RAIN CUR

REN

T

GAT

E

THR

ESH

O

OLT

A

G

E

Electrical Characteristics P-CHANNEL – Q2 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I I

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Output Capacitance Reverse Transfer Capacitance

C C C

Q1, N-CHANNEL

= +25°C, unless otherwise specified.)

A

-20

DSS

⎯ ⎯

DSS

⎯ ⎯

GSS

-0.5

⎯

200

|

fs

-0.5

SD

⎯ ⎯

iss

⎯ ⎯

oss

⎯ ⎯

rss

⎯ ⎯

-1.0 µA

± 1.0

⎯

0.7

1.1

1.7

-1.0 V

0.9

1.4

2.0

⎯ ⎯ ⎯

-1.2 V

175 pF

30 pF 20 pF

DMC2004VK

V

= 0V, ID = -250µA

GS

V

= -20V, VGS = 0V

DS

µA

VGS = ±4.5V, VDS = 0V

VDS = VGS, ID = -250µA

= -4.5V, ID = -430mA

V

GS

V

Ω

mS

= -2.5V, ID = -300mA

GS

= -1.8V, ID = -150mA

V

GS

VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA

= -16V, VGS = 0V

V

DS

f = 1.0MHz

(V)

LD V

(A)

D

I, D

(A)

D

I, D

0

V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

GS(th)

V,

T , AMBIENT TEMPERATURE (°C)

A

Fig. 3 Gate Threshold Voltage

vs. Ambient Temperature

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I , DRAIN CURRENT (A)

D

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

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I , DRAIN CURRENT (A)

Fig. 5 Static Dr ain-Source On-Resistance

D

vs. Drain Current

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 6 Static Drain-S ource On-Resistance vs.

Drain-Source Current vs. Gate Source Voltage

DMC2004VK

10

Q1, N-CHANNEL (cont.)

T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Static Drain-Source On-State Resistance

Fig. 9 Forward Transfer Admittance vs. Drain Current

vs. Ambient Temperature

I , DRAIN CURRENT (A)

D

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V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Capacitance

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RAIN CUR

REN

T

R

CUR

RENT

H

RESH

O

DMC2004VK

Q2, P-CHANNEL

(A)

D

-I , D

0

-V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 11 Typical Output Characteristics

(A)

AIN

D

-I , D

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 12 Typical Transf er Characteris tics

LTAGE (V)

LD V

GS(th)

-V , GATE T

T , AMBIENT TEMPERATURE (°C)

Fig. 13 Gate Threshold Voltage vs. Ambient Temperature

A

-I , DRAI N-SOURCE CURRENT (A)

Fig. 14 Static Drain-Source On-Resistance vs. Drain Current

D

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 15 Static Drain-Source On-Resistance vs.

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Drain Current

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-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage

10

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Q2, P-CHANNEL (cont.)

T , AMBIENT TEMPERATURE (°C)

A

Fig. 17 Static Drain-Source On-State Resistance

vs. Ambient Temperature

DMC2004VK

-I , DRAIN CURRENT (A)

Fig. 19 Forward Transfer Admittance vs. Drain Current

D

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-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 20 Typical Capacitance

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Package Outline Dimensions

A

B

K

D

G

H

Suggested Pad Layout

G

Z

Y

C2

X

C2

DMC2004VK

Dim Min Max Typ

C

M

L

Dimensions Value (in mm)

Z 2.2 G 1.2

C1

X 0.375 Y 0.5

C1 C2

SOT563

A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

1.7

0.5

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMC2004VK

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