Diodes DMC2004LPK User Manual
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage V
GS(th)
< 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Gate
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ESD protected
Green
Mechanical Data
• Case: X1-DFN1612-6
• Case Material: Molded Plastic, “Green” Molding
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe.
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.003 grams (approximate)
X1-DFN1612-6
DMC2004LPK
Compound. UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
S
G
D
1
Q
1
12 3
S
G
1
TOP VIEW
Internal Schematic
2
2
456
Q
2
D
2
1
e4
Ordering Information (Note 4)
Part Number Case Packaging
DMC2004LPK-7 X1-DFN1612-6 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
C1
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
C1 = Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
YM
M = Month (ex: 9 = September)
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
1 of 8
www.diodes.com
February 2013
© Diodes Incorporated
)
)
DMC2004LPK
Maximum Ratings N-CHANNEL – Q1 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
T
= +25°C
A
T
= +85°C
A
V
DSS
V
GSS
I
D
20 V
±8
750
540
V
mA
Maximum Ratings P-CHANNEL – Q2 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
= +25°C
T
A
= +85°C
T
A
V
DSS
V
GSS
I
D
-20 V
±8
-600
-430
V
mA
Thermal Characteristics (@T
NEW PRODUCT
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Characteristic Symbol Value Unit
Electrical Characteristics N-CHANNEL – Q
= +25°C, unless otherwise specified.)
A
P
R
T
, T
J
(@T
= +25°C, unless otherwise specified.)
A
1
θJA
D
STG
500 mW
250
-65 to +150
°C/W
°C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
GSS
DSS
DSS
20
— —
— —
—
— V
1 µA
± 1
V
V
µA
VGS = ±4.5V, VDS = 0V
= 0V, ID = 10µA
GS
= 16V, VGS = 0V
DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 — 1.0 V
—
—
—
200
|
0.5
0.4
0.5
0.7
—
—
0.55
0.70
0.90
— mS
1.2 V
VDS = VGS, ID = 250µA
= 4.5V, ID = 540mA
V
GS
Ω
V
= 2.5V, ID = 500mA
GS
V
= 1.8V, ID = 350mA
GS
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
— —
— —
— —
150 pF
25 pF
20 pF
V
f = 1.0MHz
= 16V, VGS = 0V
DS
Electrical Characteristics P-CHANNEL – Q
(@TA = +25°C, unless otherwise specified.)
2
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-20
— —
— —
—
— V
-1.0 µA
± 1.0
µA
V
= 0V, ID = -250µA
GS
V
= -20V, VGS = 0V
DS
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
|Y
V
SD
-0.5 — -1.0 V
—
1.1
1.7
0.7
200
|
fs
-0.5 — -1.2 V
— —
0.9
1.4
2.0
VDS = VGS, ID = -250µA
Ω
mS
= -2.5V, ID = -300mA
V
GS
V
= -1.8V, ID = -150mA
GS
VDS =10V, ID = 0.2A
= -4.5V, ID = -430mA
V
GS
VGS = 0V, IS = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
C
iss
C
oss
C
rss
— —
— —
— —
175 pF
30 pF
20 pF
V
f = 1.0MHz
= -16V, VGS = 0V
DS
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
2 of 8
www.diodes.com
February 2013
© Diodes Incorporated
R
CUR
RENT
DMC2004LPK
Q1, N-CHANNEL
(A)
AIN
NEW PRODUCT
D
I , DRAIN CURRENT (A)
0
0
V , DRAIN SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
GS(th )
V , GATE THRESHOLD VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
A
D
I, D
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 4 Static D rain-Source On-Resistance vs. Drain Current
Fig. 2 Typical Transfer Characteristi cs
I , DRAIN CURRENT (A)
D
10
I , DRAIN-SOURCE CURRENT (A)
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
D
3 of 8
www.diodes.com
D
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
February 2013
© Diodes Incorporated
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