Diodes DMC2004DWK User Manual
K
Features
• Low On-Resistance
• Low Gate Threshold Voltage V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 3)
NEW PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
< 1V
GS(th)
ESD protected
TOP VIEW
DMC2004DW
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: See Page 7
• Ordering & Date Code Information: See Page 7
• Weight: 0.006 grams (approximate)
SOT-363
D
1
Q
1
S
1
TOP VIEW
Internal Schematic
G
S
2
2
Q
2
D
G
2
1
Maximum Ratings N-CHANNEL – Q1 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
TA = 25°C
= 85°C
T
A
Maximum Ratings P-CHANNEL – Q
@T
2
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
= 25°C
T
Drain Current (Note 1)
A
= 85°C
T
A
Thermal Characteristics – Total Device @T
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB.
DMC2004DWK
Document number: DS31114 Rev. 4 - 2
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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V
DSS
V
GSS
I
D
V
DSS
V
GSS
I
D
= 25°C unless otherwise specified
A
P
d
R
JA
θ
T
, T
j
STG
20 V
±8
540
390
-20 V
±8
-430
-310
250 mW
500
-65 to +150
1 of 8
V
mA
V
mA
°C/W
°C
September 2007
© Diodes Incorporated
K
Electrical Characteristics N-CHANNEL – Q
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
NEW PRODUCT
Output Capacitance
Reverse Transfer Capacitance
Electrical Characteristics P-CHANNEL – Q2 @T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 4. Short duration pulse test used to minimize self-heating effect.
DMC2004DWK
Document number: DS31114 Rev. 4 - 2
@T
= 25°C unless otherwise specified
A
1
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
V
C
C
C
BV
I
I
V
GS(th)
R
DS (ON)
|Y
V
C
C
C
fs
SD
iss
oss
rss
DSS
DSS
GSS
fs
SD
iss
oss
rss
0.5
200
|
0.5
= 25°C unless otherwise specified
A
-20
-0.5
200
|
-0.5
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20
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
0.4
0.5
0.7
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
0.7
⎯
1.1
1.7
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
1
μA
± 1 μA
1.0 V
0.55
0.70
Ω
0.90
mS
1.2 V
150 pF
25 pF
20 pF
V
-1.0
μA
± 1.0 μA
-1.0 V
0.9
1.4
Ω
2.0
mS
-1.2 V
175 pF
30 pF
20 pF
DMC2004DW
V
= 0V, ID = 10μA
GS
V
= 16V, VGS = 0V
DS
V
= ±4.5V, VDS = 0V
GS
V
= VGS, ID = 250μA
DS
= 4.5V, ID = 540mA
V
GS
= 2.5V, ID = 500mA
V
GS
V
= 1.8V, ID = 350mA
GS
VDS =10V, ID = 0.2A
V
= 0V, IS = 115mA
GS
V
= 16V, VGS = 0V
DS
f = 1.0MHz
V
= 0V, ID = -250μA
GS
V
= -20V, VGS = 0V
DS
V
= ±4.5V, VDS = 0V
GS
V
= VGS, ID = -250μA
DS
= -4.5V, ID = -430mA
V
GS
= -2.5V, ID = -300mA
V
GS
V
= -1.8V, ID = -150mA
GS
VDS =10V, ID = 0.2A
V
= 0V, IS = -115mA
GS
V
= -16V, VGS = 0V
DS
f = 1.0MHz
September 2007
© Diodes Incorporated
K
R
A
CUR
RENT
A
R
A
CUR
R
E
T
A
G
A
R
O
O
A
G
NEW PRODUCT
Q
N-CHANNEL
1,
)
(
IN
D
I, D
0
0
V , DRAI N SOUR C E VOLTAG E (V)
DS
Fig. 1 Typical Output Characteristics
)
(
N
IN
D
I, D
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
DMC2004DW
E (V)
LT
LD V
ESH
TE TH
GS(th)
V,
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3 Gate Threshold Voltage vs.
Ambient Temperat u re
I , DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs.
D
Drain Curre nt
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-S ource On-Resistance vs.
DMC2004DWK
Document number: DS31114 Rev. 4 - 2
D
Drain Curre nt
3 of 8
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I , DRAIN-SOURCE CURRENT (A)
D
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate So ur ce Voltage
September 2007
© Diodes Incorporated
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