Diodes DMC1229UFDB User Manual

yp

Product Summary

I

Device

Q1

N-Channel

Q2

P-Channel

V

(BR)DSS

12V

-12V

R

DS(ON) max

29m @ V
34m @ VGS = 2.5V
44m @ VGS = 1.8V

65m @ VGS = 1.5V
61m @ V
81m @ VGS = -2.5V

115m @ VGS = -1.8V
170m @ VGS = -1.5V

= 4.5V

GS

= -4.5V

GS

D MAX

TA = +25°C

5.6A

5.1A

4.5A

3.7A

-3.8A

-3.3A

-2.8A

-2.3A

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

 Load Switch

 Power Management Functions

 Portable Power Adaptors

Pin1

D2

U-DFN2020-6

T

D2

G1

S1

Bottom View

e B

S2

G2

D1

D1

DMC1229UFDB

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Input Capacitance

 Low Profile, 0.6mm Max Height

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6 Type B

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish NiPdAu over Copper leadframe. Solderable per

MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.0065 grams (approximate)

D1

G1

G2

S1

N-CHANNEL MOSFET P-CHANNEL MOSFET

Internal Schematic

e4

D 2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMC1229UFDB -7 U-DFN2020-6 Type B 3000/Tape & Reel

DMC1229UFDB -13 U-DFN2020-6 Type B 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

D2

YM

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

D2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 9

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

t < 5s

T

= +25C

A

T

= +70C

A

T

= +25C

A

T

= +70C

A

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Note: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

Steady State

t < 5s 2.2

Steady State

t < 5s 55

DMC1229UFDB

Q1

N-CHANNEL

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

P

R

R

T

J, TSTG

12 -12 V

±8 ±8 V

5.6

4.4

7.2

5.8

1

20 -15 A

D

JA



JC



Q2

P-CHANNEL

-3.8

-3.0

-5.0

-4.0

-1

1.4

Units

A

A

A

W

92

°C/W

30

-55 to 150 °C

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

2 of 9

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September 2013

© Diodes Incorporated

)

g

g

g

r

)

g

g

g

r

DMC1229UFDB

Electrical Characteristics Q1 N-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

12
— —
— —

—

— V

1.0 A

±100 nA

VGS = 0V, ID = 250A
VDS = 12V, VGS = 0V

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.4 — 1 V
—
—
—
—
—

|

—

17 29
20 34
24 44
30 65

6.5 — S

0.6 1.2 V

VDS = VGS, ID = 250A

= 4.5V, ID = 5A

V

GS

V

= 2.5V, ID = 4.6A

m

GS

V

= 1.8V, ID = 4.1A

GS

V

= 1.5V, ID = 2A

GS

VDS = 10V, ID = 5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

C

C

C

R

Q

Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

g

s

d

f

— 914 —
— 132 —
— 119 —
— 1.26 —
— 10.5 —
— 19.6 —
— 1.2 —
— 1.6 —
— 5.0 —
— 10.5 —
— 16.6 —
— 4.1 —

pF
pF
pF



= 6V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

nC
nC
nC

= 6V, ID = 6.5A

V

DS

nC
ns
ns

V

= 6V, VGS = 4.5V,

DD

R

ns

= 1.2, RG = 1

L

ns

Electrical Characteristics Q2 P-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-12 — — V
— —
— —

-1.0 A

±100 nA

VGS = 0V, ID = -250A
VDS = -12V, VGS = 0V

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.4 — -1 V
—
—
—
—
—

|

—

37 61
47 81
63 115
90 170

5.5 — S

-0.65 -1.2 V

VDS = VGS, ID = -250A

= -4.5V, ID = -3.6A

V

GS

= -2.5V, ID = -3.2A

V

m

GS

V

= -1.8V, ID = -1A

GS

= -1.5V, ID = -1A

V

GS

VDS = -10V, ID = -3.6A

VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C

C

C

R

Q

Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

g

s

d

f

— 915 —
— 225 —
— 183 —
— 56.9 —
— 10.7 —
— 17.9 —
— 1.7 —
— 3.0 —
— 5.7 —
— 11.5 —
— 27.8 —
— 26.4 —

pF

V

= -6V, VGS = 0V,

pF
pF

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

nC
nC
nC

= -6V, ID = -4.3A

V

DS

nC
ns
ns
ns

= -6V, VGS = -4.5V,

V

DD

= 1.6, RG = 1

R

L

ns

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

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R

CUR

RENT

RAIN CUR

REN

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

R

OUR

CE ON-R

TANC

DMC1229UFDB

Q1 N-CHANNEL

20

V = 5.0VDS

18

16

14

(A)

12

10

8

6

D

I, D

4

T = 125°C

2

0

0 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.01.0

A

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0.03



V = 4.5V

GS

0.025

ESISTANCE ( )

0.02

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

T = 125°C

A

A

T = 85°C

A

(A)

AIN

D

I, D

20.0

18.0

16.0

14.0

12.0

10.0

8.0

6.0

V= 8V

GS

V= 4.5V

GS

V= 3V

GS

V= 2.5V

GS

V= 2V

GS

V= 1.8V

GS

V= 1.5V

GS

V= 1.2V

GS

4.0

2.0

0.0
012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

V= 1V

GS

Figure 1 Typical Output Characteristics

0.05



V = 1.5VGS

0.04

ESISTANCE ( )

0.03

V = 1.8VGS

CE

V = 2.5VGS

0.02

V= 4.5V

AIN-S

0.01

, D

DS(ON)

0

1 3 5 7 9 11 13 15 17 19 21

GS

I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.8

1.6

E

1.4

AIN-S

1.2

, D

1.0

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 5 On-Resistance Variation with Temperature

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

V= V

2.5

GS

I= 3A

D

V = 4.5V

GS

I= 5A

D



4 of 9

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CE

T = 25°C

A

0.015

AIN-S

0.01

, D

DS(ON)

0.005
0 2 4 6 8 101214161820

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.04



E ( )

0.035

0.03

V = 4.5V

ESIS

0.025

0.02

GS

I= 3A

D

V= V
I= 5A

D

0.015

AIN-S

0.01

, D

0.005

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

T = -55°C

A

4.5

GS



September 2013

© Diodes Incorporated

G

TE THRESH

O

OLTAG

OUR

CE CUR

R

T

DMC1229UFDB

1

0.9

E (V)

0.8

0.7

I= 1mA

0.6

LD V

I = 250µA

D

D

0.5

0.4

0.3

A

0.2

GS(th)

0.1

V,

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Figure 7 Gate Threshol d Variation vs. Ambient Temperature

20

18

16

(A)

14

EN

12

T = 25°C

10

A

8

6

S

I, S

4

2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

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R

N

CUR

REN

T

RAIN CUR

REN

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

R

OUR

CE ON-R

T

C

DMC1229UFDB

Q2 P-CHANNEL

10.0

9.0

8.0

(A)

7.0

6.0

5.0

AI

4.0

3.0

D

-I , D

V= -8V

GS

V= -3V

GS

V = -2.5V

GS

V= -2V

GS

V = -1.8V

GS

V = -4.5V

GS

V = -1.5V

GS

2.0

V = -1.2V

1.0

0.0
012345

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

0.1



V = -1.8V

GS

GS

0.09

0.08

ESISTANCE ( )

0.07

0.06

CE

V = -2.5V

GS

0.05

AIN-S

0.04

V = -4.5V

GS

, D

0.03

DS(ON)

0.02
13579111315171921

-I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.4

V = -2.5V

1.3

1.2

E

GS

I = -3A

D

1.1

V = -4.5V

GS

I = -5A

1.0

AIN-S

, D

0.9

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.7

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

D



Figure 5 On-Resistance Variation with Temperature

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

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20

V = -5.0V

DS

18

16

(A)

14

12

10

8

6

D

-I , D
4

2

0

0 0.5 1.5 2.51.0 2.0 3.0

T = 150°C

A

T = 125°C

A

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

0.05



V = -4.5V

GS

T = 150 CA

0.045

ESISTANCE ( )

0.035

CE

0.04

0.03

T = 85CA

T = 25CA

T = -55CA

AIN-S

, D

0.025

DS(ON)

0.02
1 3 5 7 9 11 1315171921

-I , DRAIN SOURCE CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.07



E ( )

0.06

AN

-2.

V=5V

GS

-3

ESIS

I= A

D

0.05

0.04

V= -4.5V

GS

I= A

-5

D

AIN-S

0.03

, D

DS(on)

0.02

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

T = 125CA



September 2013

© Diodes Incorporated

G

TE THRESH

O

OLTAG

O

URCE CUR

RENT

R

CUR

RENT

T

R

T

T

H

R

R

TANC

1

0.9

E (V)

0.8

0.7

LD V

0.6

-I = 250µA

D

-I = 1mAD

0.5

A

0.4

0.3

GS(TH)

V,

0.2

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Figure 7 Gate Threshold Variation vs. Ambient Temperature

1000

100

R

DS(on)

Limited

T = 150°C

J(max)

T = 25°C

A

V = -10V

GS

Single Pulse
DUT on 1 * MRP Board

DMC1229UFDB

20

18

16

(A)

14

12

10

8

6

S

-I , S
4

2

0

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

T= 25°C

A

(A)

10

DC

P = 10s

1

W

AIN

-I , D

P = 1s

W

P = 100ms

D

0.1

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.01

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 SOA, Safe Operation Area

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.9

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

R (t) = r(t) * R



JA JA

R = 156°C/W



JA

Duty Cycle, D = t1/ t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)

Figure 10 Transient Thermal Resistance

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Pin#1 ID

A

A1

D

D2

z

A3

SEATING PLANE

Dim Min Max Typ

d

E

E2

f

e

f

L

b

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

X2

G1

C

G

X1

Y1

Z

G

Dimensions Value (in mm)

Z 1.67

G 0.20
G1 0.40
X1 1.0
X2 0.45

Y 0.37
Y1 0.70

C 0.65

DMC1229UFDB

U-DFN2020-6

Type B

A 0.545 0.605 0.575

A1 0 0.05 0.02
A3

 

b 0.20 0.30 0.25
D 1.95 2.075 2.00
d

 

D2 0.50 0.70 0.60

e

 

E 1.95 2.075 2.00

E2 0.90 1.10 1.00

f

 

L 0.25 0.35 0.30
z

 

All Dimensions in mm

0.13

0.45

0.65

0.15

0.225

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMC1229UFDB

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

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