Diodes DMC1229UFDB User Manual
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Product Summary
I
Device
Q1
N-Channel
Q2
P-Channel
V
(BR)DSS
12V
-12V
R
DS(ON) max
29m @ V
34m @ VGS = 2.5V
44m @ VGS = 1.8V
65m @ VGS = 1.5V
61m @ V
81m @ VGS = -2.5V
115m @ VGS = -1.8V
170m @ VGS = -1.5V
= 4.5V
GS
= -4.5V
GS
D MAX
TA = +25°C
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(ON)
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Pin1
D2
U-DFN2020-6
T
D2
G1
S1
Bottom View
e B
S2
G2
D1
D1
DMC1229UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
D1
G1
G2
S1
N-CHANNEL MOSFET P-CHANNEL MOSFET
Internal Schematic
e4
D 2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMC1229UFDB -7 U-DFN2020-6 Type B 3000/Tape & Reel
DMC1229UFDB -13 U-DFN2020-6 Type B 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
D2
YM
DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
D2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
1 of 9
www.diodes.com
September 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
T
= +25C
A
T
= +70C
A
T
= +25C
A
T
= +70C
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Note: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Steady State
t < 5s 2.2
Steady State
t < 5s 55
DMC1229UFDB
Q1
N-CHANNEL
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
P
R
R
T
J, TSTG
12 -12 V
±8 ±8 V
5.6
4.4
7.2
5.8
1
20 -15 A
D
JA
JC
Q2
P-CHANNEL
-3.8
-3.0
-5.0
-4.0
-1
1.4
Units
A
A
A
W
92
°C/W
30
-55 to 150 °C
DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
2 of 9
www.diodes.com
September 2013
© Diodes Incorporated
)
g
g
g
r
)
g
g
g
r
DMC1229UFDB
Electrical Characteristics Q1 N-CHANNEL (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
12
— —
— —
—
— V
1.0 A
±100 nA
VGS = 0V, ID = 250A
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.4 — 1 V
—
—
—
—
—
|
—
17 29
20 34
24 44
30 65
6.5 — S
0.6 1.2 V
VDS = VGS, ID = 250A
= 4.5V, ID = 5A
V
GS
V
= 2.5V, ID = 4.6A
m
GS
V
= 1.8V, ID = 4.1A
GS
V
= 1.5V, ID = 2A
GS
VDS = 10V, ID = 5A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
g
s
d
f
— 914 —
— 132 —
— 119 —
— 1.26 —
— 10.5 —
— 19.6 —
— 1.2 —
— 1.6 —
— 5.0 —
— 10.5 —
— 16.6 —
— 4.1 —
pF
pF
pF
= 6V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
= 6V, ID = 6.5A
V
DS
nC
ns
ns
V
= 6V, VGS = 4.5V,
DD
R
ns
= 1.2, RG = 1
L
ns
Electrical Characteristics Q2 P-CHANNEL (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-12 — — V
— —
— —
-1.0 A
±100 nA
VGS = 0V, ID = -250A
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
-0.4 — -1 V
—
—
—
—
—
|
—
37 61
47 81
63 115
90 170
5.5 — S
-0.65 -1.2 V
VDS = VGS, ID = -250A
= -4.5V, ID = -3.6A
V
GS
= -2.5V, ID = -3.2A
V
m
GS
V
= -1.8V, ID = -1A
GS
= -1.5V, ID = -1A
V
GS
VDS = -10V, ID = -3.6A
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
g
s
d
f
— 915 —
— 225 —
— 183 —
— 56.9 —
— 10.7 —
— 17.9 —
— 1.7 —
— 3.0 —
— 5.7 —
— 11.5 —
— 27.8 —
— 26.4 —
pF
V
= -6V, VGS = 0V,
pF
pF
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
= -6V, ID = -4.3A
V
DS
nC
ns
ns
ns
= -6V, VGS = -4.5V,
V
DD
= 1.6, RG = 1
R
L
ns
DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
3 of 9
www.diodes.com
September 2013
© Diodes Incorporated
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