Diodes DMC1030UFDB User Manual
Product Summary
I
Device
Q1
N-Channel
Q2
P-Channel
V
(BR)DSS
12V
-12V
R
DS(ON) max
34m @ V
40m @ VGS = 2.5V
50m @ VGS = 1.8V
70m @ VGS = 1.5V
59m @ V
81m @ VGS = -2.5V
115m @ VGS = -1.8V
215m @ VGS = -1.5V
= 4.5V
GS
= -4.5V
GS
D MAX
TA = +25°C
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Input Capacitance
• Low Profile, 0.6mm Max Height
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2020-6 Type B
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.0065 grams (approximate)
e4
• Load Switch
• Power Management Functions
• Portable Power Adaptors
ESD PROTECTED
D2
Pin1
U-DFN2020-6
Type B
D2
G1
S1
Bottom View
D1
S2
G2
D1
D1
G1
GateProtection
Diode
N-CHANNEL MOSFET P-CHANNEL MOSFET
S1
G2
Gate Protect ion
Internal Schematic
Diode
D2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMC1030UFDB -7 U-DFN2020-6 Type B 3000/Tape & Reel
DMC1030UFDB -13 U-DFN2020-6 Type B 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
D3
M
Y
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
D3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
1 of 9
www.diodes.com
April 2014
© Diodes Incorporated
V
DMC1030UFDB
Maximum Ratings (@T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
V
DSS
V
GSS
Steady
State
t < 5s
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
I
D
I
D
I
S
I
DM
Q1
N-CHANNEL
12 -12 V
±8 ±8 V
5.1
4.1
6.6
5.3
2
35 -25 A
Q2
P-CHANNEL
-3.9
-3.1
-5.0
-4.0
-1.7
Units
A
A
A
Thermal Characteristics
Characteristic Symbol
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s 1.89
Steady State
t < 5s 66
P
R
R
T
J, TSTG
D
JA
θ
JC
θ
Electrical Characteristics Q1 N-CHANNEL (@ T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
12
— —
— —
—
— V
1.0 A
±10 A
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS(th)
R
DS(ON)
V
SD
0.4 — 1 V
—
—
—
—
—
17 34
20 40
24 50
28 70
0.7 1.2 V
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time trr
Body Diode Reverse Recovery Charge Qrr
Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
—
—
—
g
g
gs
r
f
—
—
—
—
—
—
—
—
—
—
—
1003
132
115
11.3
12.2
23.1
1.3
1.5
4.4
7.4
18.8
4.9
7.6
0.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
2 of 9
www.diodes.com
alue Units
1.36
92
°C/W
18
-55 to +150 °C
VGS = 0V, ID = 250A
V
= 12V, VGS = 0V
DS
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 4.6A
GS
V
= 2.5V, ID = 4.2A
GS
= 1.8V, ID = 3.8A
V
GS
V
= 1.5V, ID = 1.5A
GS
V
= 0V, IS = 4.8A
GS
V
= 6V, VGS = 0V,
DS
f = 1.0MHz
V
= 0V, VGS = 0V, f = 1MHz
DS
m
pF
pF
pF
nC
nC
V
= 10V, ID = 6.8A
nC
DS
nC
ns
ns
V
= 6V, VGS = 4.5V,
DD
ns
= 1.1, RG = 1
R
L
ns
nS
I
= 5.4A, dI/dt = 100A/s
S
nC
= 5.4A, dI/dt = 100A/s
I
S
© Diodes Incorporated
W
April 2014
RAIN
C
URREN
T
R
CUR
RENT
R
R
OUR
ON-R
R
R
OUR
ON-R
R
RAIN
OUR
C
R
R
OUR
CE ON-R
TANC
DMC1030UFDB
(A)
20
18
16
14
V= 3.0V
V= 4.0V
GS
V= 3.5V
GS
GS
V= 4.5V
GS
V= 1.8V
GS
V= 2.0V
GS
VV
GS
12
10
8
6
D
I, D
4
V= 0.9V
2
0
00.511.522.53
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
V= 1.0V
GS
Figure 1 Typical Output Characteristics
0.05
Ω
V = 1.5VGS
= 1.5
20
V = 5.0VDS
18
16
14
(A)
12
10
8
AIN
6
D
I, D
4
2
0
00.5 11.5 2
T = 150°C
A
T = 85°C
T = 125°C
A
V , GATE-SOURCE VOLTAGE (V)
GS
A
T = 25°C
A
T = -55°C
A
Figure 2 Typical Transfer Characteristics
0.04
Ω
V = 4.5VGS
0.04
0.03
T = 150°C
ESISTANCE ( )
CE
AIN-S
, D
0.03
0.02
0.01
V = 4.5VGS
V= 18V
GS
V= 2.5V
GS
ESISTANCE ( )
CE
AIN-S
, D
0.02
0.01
T = 125°C
A
T = 25°C
A
T = 85°C
A
A
T = -55°C
A
DS(ON)
0
0 2 4 6 8 101214161820
I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
DS(ON)
0.00
0 2 4 6 8 101214161820
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.06
Ω
1.8
1.6
E
1.4
1.2
-S
1
, D
0.8
0.6
DS(ON)
0.4
ON-RESISTANCE (NORMALIZED)
0.2
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variati on with Temperature
V= V
2.5
GS
I = 5.0A
D
V= V
1.8
GS
I = 3.0A
D
°
E ( )
0.05
ESIS
0.04
V= V
1.8
GS
I = 3.0A
0.03
D
V= V
0.02
AIN-S
, D
0.01
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
2.5
GS
I = 5.0A
D
°
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
3 of 9
www.diodes.com
April 2014
© Diodes Incorporated
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