Diodes DMC1017UPD User Manual

g

YYWW

DMC1017UPD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

POWERDI

Product Summary

Device

Q1 12V

Q2 -12V

V

R

(BR)DSS

17m @ V

25m @ VGS = 2.5V

32m @ V

53m @ VGS = -2.5V

DS(ON)

GS

GS

= 4.5V

= -4.5V

TA = +25°C

9.5A

7.8A

-6.9A

-5.4A

Description and Applications

This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize R
superior switching performance. This device is ideal for use in

Notebook battery power management and Loadswitch.

• Notebook Battery Power Management

• DC-DC Converters

• Loadswitch

Top View

Pin1

Bottom View

and yet maintain

DS(on)

I

D

G1

Features and Benefits

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low R

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– Minimizes On State Losses

DS(ON)

Mechanical Data

• Case: POWERDI5060-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.097 grams (approximate)

D1

G2

S1

Q1 N-Channel MOSFET Q2 P-Channel MOSFET

D2

S2

S1

G1

S2

G2

Top View

Pin Confi

Ordering Information (Note 4)

Part Number Case Packaging

DMC1017UPD-13 POWERDI5060-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMC1017UPD

Document number: DS36903 Rev. 1 - 0

D1 D2 D2

C1017UD

S1D1G1 S2 G2

www.diodes.com

= Manufacturer’s Marking
C1017UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

1 of 9

© Diodes Incorporated

®

5060-8

uration

April 2014

D1

D1

D2

D2

V

V

DMC1017UPD

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Body Diode Forward Current

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Avalanche Current (Note 6) L = 0.1mH

Avalanche Energy (Note 6) L = 0.1mH

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Q1

V

DSS

V

GSS

= +25°C

Steady

State

t<10s

T

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

S

I

DM

I

AS

E

AS

alue Q2 Value Units

12 -12 V

±8 ±8 V

9.5

7.6

13.0

10.4

-6.9

-5.5

-9.4

-7.5

A

A

2 -2 A

50 -35 A

9.7 -9.2 A

4.7 4.3 mJ

Thermal Characteristics

Characteristic Symbol

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 29

P

R

R

T

J, TSTG

JA

JC

D

Electrical Characteristics Q1 N-Channel (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

12

BV

DSS

I

⎯ ⎯

DSS

⎯ ⎯

I

GSS

⎯ ⎯

1 µA

±100

V

VGS = 0V, ID = 250µA

VDS = 12V, VGS = 0V

nA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

0.6

⎯

⎯

⎯

⎯

9.6 17

11 25

0.7 1.2 V

1.5 V

VDS = VGS, ID = 250µA

V

m

VGS = 2.5V, ID = 9.8A

VGS = 0V, IS = 2.9A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (VGS = 4.5V)

Total Gate Charge (VGS = 10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. I

and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.

AS

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

⎯

iss

C

oss

C

⎯

rss

R

⎯

G

Q

g

Q

⎯

g

Q

⎯

gs

Q

gd

t

⎯

D(on)

t

⎯

r

t

D(off)

t

⎯

f

t

rr

Q

rr

⎯

⎯

⎯

⎯

—

—

1787

297

265

1.6

18.6

35.4

2.7

3.8

6.9

10.9

70.3

31.8

13.1 —

2.2 —

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

V

pF

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

V

nS

V

nS

I

F

nC

I

F

POWERDI is a registered trademark of Diodes Incorporated.

DMC1017UPD

Document number: DS36903 Rev. 1 - 0

2 of 9

www.diodes.com

alue Units

2.3

1.5
54

4.1

-55 to +150 °C

= 4.5V, ID = 11.8A

GS

= 6V, VGS = 0V,

DS

= 6V, ID = 11.8A

DS

= 6V, RL = 6

DD

= 4.5V, RG = 6, ID = 1A

GS

= 11.8A, di/dt = 100A/s

= 11.8A, di/dt = 100A/s

© Diodes Incorporated

W

°C/W

April 2014

R

CUR

R

T

R

CUR

RENT

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

R

OUR

CE ON-R

T

C

DMC1017UPD

20.0

15.0

(A)

EN

10.0

V= 8.0V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.0V

GS

V= 2.5V

GS

V= 2.0V

GS

AIN

D

5.0

I, D

V= 1.2V

0.0
0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Figure 1 Typical Output Characteristics

0.015

Ω

0.012

V= 1.5V

GS

V= 1.3V

GS

20

V = 5.0VDS

18

16

14

(A)

12

10

8

AIN

6

D

I, D

4

2

0

0 0.5 1 1.5 2 2.5

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

0.015

Ω

0.012

V = 4.5VGS

T = 125°C

A

T = 150°C

A

ESISTANCE ( )

CE

AIN-S

, D

DS(ON)

E

AIN-S

, D

DS(ON)

0.009

0.006

V = 2.5VGS

V = 4.5VGS

0.003

0

0 2 4 6 8 10 12 14 16 18 20

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.5

2

V= V

2.5

1.5

GS

I= 5A

D

1

0.5

ON-RESISTANCE (NORMALIZED)

V = 4.5V

GS

I= 10A

D

T = 85°C

ESISTANCE ( )

CE

0.009

T = 25°C

A

A

T = -55°C

A

0.006

AIN-S

0.003

, D

DS(ON)

0

0 2 4 6 8 101214161820

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.015

Ω

E ( )

V=.5V

2

GS

I= 5A

D

AN

0.01

ESIS

V= V

4.5

GS

I = 10A

D

0.005

AIN-S

, D

DS(ON)

0

-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5 On-Resistance Variat ion wi th Temperature

POWERDI is a registered trademark of Diodes Incorporated.

DMC1017UPD

Document number: DS36903 Rev. 1 - 0

3 of 9

www.diodes.com

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation wi th Temperature

April 2014

© Diodes Incorporated