Diodes DMC1017UPD User Manual

g

YYWW

DMC1017UPD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

POWERDI

Product Summary

Device

Q1 12V

Q2 -12V

V

R

(BR)DSS

17m @ V

25m @ VGS = 2.5V

32m @ V

53m @ VGS = -2.5V

DS(ON)

GS

= 4.5V

= -4.5V

TA = +25°C

9.5A

7.8A

-6.9A

-5.4A

Description and Applications

This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize R superior switching performance. This device is ideal for use in

Notebook battery power management and Loadswitch.

• Notebook Battery Power Management

• DC-DC Converters

• Loadswitch

Top View

Pin1

Bottom View

and yet maintain

DS(on)

I

D

G1

Features and Benefits

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low R

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– Minimizes On State Losses

DS(ON)

Mechanical Data

• Case: POWERDI5060-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.097 grams (approximate)

D1

G2

S1

Q1 N-Channel MOSFET Q2 P-Channel MOSFET

D2

S2

S1

G1

S2

G2

Top View

Pin Confi

Ordering Information (Note 4)

Part Number Case Packaging

DMC1017UPD-13 POWERDI5060-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMC1017UPD

Document number: DS36903 Rev. 1 - 0

D1 D2 D2

C1017UD

S1D1G1 S2 G2

www.diodes.com

= Manufacturer’s Marking C1017UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53)

1 of 9

®

5060-8

uration

April 2014

D1

D2

V

DMC1017UPD

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Body Diode Forward Current

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Avalanche Current (Note 6) L = 0.1mH

Avalanche Energy (Note 6) L = 0.1mH

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Q1

V

DSS

V

GSS

= +25°C

Steady

State

t<10s

T

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

S

I

DM

I

AS

E

AS

alue Q2 Value Units

12 -12 V

±8 ±8 V

9.5

7.6

13.0

10.4

-6.9

-5.5

-9.4

-7.5

A

2 -2 A

50 -35 A

9.7 -9.2 A

4.7 4.3 mJ

Thermal Characteristics

Characteristic Symbol

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 29

P

R

T

J, TSTG

JA

JC

D

Electrical Characteristics Q1 N-Channel (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

12

BV

DSS

I

⎯ ⎯

DSS

⎯ ⎯

I

GSS

⎯ ⎯

1 µA

±100

V

VGS = 0V, ID = 250µA

VDS = 12V, VGS = 0V

nA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

0.6

⎯

9.6 17

11 25

0.7 1.2 V

1.5 V

VDS = VGS, ID = 250µA

V

m

VGS = 2.5V, ID = 9.8A

VGS = 0V, IS = 2.9A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (VGS = 4.5V)

Total Gate Charge (VGS = 10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. I

and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.

AS

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

⎯

iss

C

oss

C

⎯

rss

R

⎯

G

Q

g

Q

⎯

g

Q

⎯

gs

Q

gd

t

⎯

D(on)

t

⎯

r

t

D(off)

t

⎯

f

t

rr

Q

rr

⎯

—

1787

297

265

1.6

18.6

35.4

2.7

3.8

6.9

10.9

70.3

31.8

13.1 —

2.2 —

⎯

V

pF

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

nS

V

nS

I

F

nC

I

F

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alue Units

2.3

1.5 54

4.1

-55 to +150 °C

= 4.5V, ID = 11.8A

GS

= 6V, VGS = 0V,

DS

= 6V, ID = 11.8A

DS

= 6V, RL = 6

DD

= 4.5V, RG = 6, ID = 1A

GS

= 11.8A, di/dt = 100A/s

W

°C/W

April 2014

R

CUR

R

T

R

CUR

RENT

R

OUR

ON-R

R

OUR

ON-R

R

OUR

C

R

OUR

CE ON-R

T

C

DMC1017UPD

20.0

15.0

(A)

EN

10.0

V= 8.0V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.0V

GS

V= 2.5V

GS

V= 2.0V

GS

AIN

D

5.0

I, D

V= 1.2V

0.0 0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Figure 1 Typical Output Characteristics

0.015

Ω

0.012

V= 1.5V

GS

V= 1.3V

GS

20

V = 5.0VDS

18

16

14

(A)

12

10

8

AIN

6

D

I, D

4

2

0

0 0.5 1 1.5 2 2.5

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

0.015

Ω

0.012

V = 4.5VGS

T = 125°C

A

T = 150°C

A

ESISTANCE ( )

CE

AIN-S

, D

DS(ON)

E

AIN-S

, D

DS(ON)

0.009

0.006

V = 2.5VGS

V = 4.5VGS

0.003

0

0 2 4 6 8 10 12 14 16 18 20

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.5

2

V= V

2.5

1.5

GS

I= 5A

D

1

0.5

ON-RESISTANCE (NORMALIZED)

V = 4.5V

GS

I= 10A

D

T = 85°C

ESISTANCE ( )

CE

0.009

T = 25°C

A

T = -55°C

A

0.006

AIN-S

0.003

, D

DS(ON)

0

0 2 4 6 8 101214161820

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.015

Ω

E ( )

V=.5V

2

GS

I= 5A

D

AN

0.01

ESIS

V= V

4.5

GS

I = 10A

D

0.005

AIN-S

, D

DS(ON)

0

-50-25 0 25 50 75100125150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5 On-Resistance Variat ion wi th Temperature

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0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation wi th Temperature

April 2014

GATE THRESH

O

TAG

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

GATE THRESH

O

OLTAG

1.5

E (V)

L

1

LD V

I = 250µA

D

I= 1mA

D

0.5

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Figure 7 Gate Threshold Variation vs. Ambient Temperat ure

10000

E (pF)

1000

C

rss

100

, J

T

°

f = 1MHz

C

DMC1017UPD

20

18

16

(A)

14

12

10

8

T= 85°C

T = 150°C

A

T = 125°C

A

S

I, S

6

4

2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

8

iss

E (V)

6

LD V

C

oss

4

2

GS

V

A

T= 25°C

A

T = -55°C

A

V= 6V

DS

I= A

11.8

D

10

024681012

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

0

0 5 10 15 20 25 30 35 40

Q(nC)

, TOTAL GATE CHARGE

g

Figure 10 Gate Charge

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RAIN

C

U

R

REN

T

R

N

CUR

REN

T

Electrical Characteristics Q2 P-Channel (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-12

⎯ ⎯

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

-0.6

⎯

21 32

41 53

-0.7 -1.2 V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (VGS = -4.5V)

Total Gate Charge (VGS = -8V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.

7. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R

G

Q

g

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

⎯

f

t

rr

Q

rr

⎯

2100

872

626

23.1

23.7

38.8

5.3

9.8

10.6

25.5

144

129

— 48.9 — nS

— 15.3 — nC

20.0

15.0

(A)

V = -8.0V

GS

V = -4.5V

GS

V = -4.0V

GS

V = -3.5V

GS

V = -3.0V

GS

V = -2.5V

GS

-1 µA

±100

-1.5 V

⎯

20

V = -5.0V

DS

18

16

(A)

14

12

DMC1017UPD

V

VGS = 0V, ID = -250µA

VDS = -12V, VGS = 0V

nA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250µA

= -4.5V, ID = -8.9A

V

m

pF



nC

nS

GS

VGS = -2.5V, ID = -6.9A

VGS = 0V, IS = -2.9A

VDS = -6V, VGS = 0V, f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -6V, ID = -8.9A

DS

V

= -6V, RL = 6

DD

= -4.5V, RG = 6, ID = -1A

V

GS

IF = -8.9A, di/dt = -100A/s

10.0

D

-I , D

5.0

V = -1.8V

0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , DRAIN -SOURCE VOLTAGE (V)

DS

GS

Figure 11 Typical Output Characteristics

V = -2.0V

GS

10

8

AI

6

D

-I , D 4

T = 150C

A

T = 125C

°

A

°

2

0

0 0.5 1 1.5 2 2.5 3 3.5 4

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

Figure 12 Typical Transfer Characteristics

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R

OUR

ON-R

R

OUR

ON-R

R

OUR

C

R

RAIN-SOUR

CE O

N-R

TAN

C

G

TE T

H

RESH

O

TAG

OUR

CE C

U

R

T

DMC1017UPD

Ω

ESISTANCE ( )

0.03

0.027

0.024

V= -4.5V

GS

T = 125 CA°

T = 150CA°

T = 85CA°

0.08

Ω

0.07

0.06

ESISTANCE ( )

0.05

V = -2.5V

GS

0.021

0.04

CE

0.03

V = -4.5V

AIN-S

0.02

GS

, D

0.01

DS(ON)

0

0 2 4 6 8 10121416 1820

-I , DRAIN SOURCE CURRENT (A)

D

Figure 13Typical On-Resistance vs.

Drain Current and Gate Voltage

2

V = -4.5V

1.5

E

GS

I = -10A

D

CE

0.018

0.015

AIN-S

, D

0.012

DS(ON)

0.009 0 2 4 6 8 10 12 14 16 18 20

-I , DRAIN SOURCE CURRENT (A)

D

Figure 14 Typical On-Resistance vs.

Drain Current and Temperature

0.05

Ω

0.045

E ( )

0.04

0.035

ESIS

T = 25CA°

T = -55CA°

V= -2.5V

GS

I= A

-5

D

0.03

1

AIN-S

, D

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J°

Figure 15 On-Resistance Variation with Temperature

2

V = -2.5V

GS

I = -5A

D

0.025

0.02

0.015

0.01

, D

0.005

DS(on)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J°

Figure 16 On-Resistance Variation with Temperature

20

-4.

V=5V

GS

-10

I= A

D

18

E (V)

16

1.5

L

-I = 1m AD

LD V

-I = 250µA

D

1

A

0.5

GS(TH)

V,

0

-50-25 0 25 50 75100125150 T , AMBIENT TEMPERATURE (°C)

A

Figure 17 Gate Threshold Variation vs. Ambient Temperature

(A)

14

EN

12

10

8

T= 150CA°

6

-I , S

S

4

T= 125CA°

2

0

0 0.3 0.6 0.9 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 18 Diode Forward Voltage vs. Current

T= 85CA°

T= 25CA°

T= -55CA°

1.5

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GAT

OUR

C

O

TAG

T

R

T T

HER

R

TANC

DMC1017UPD

10000

f = 1MHz

C

iss

8

E (V)

6

L

E V

V= -6V

1000

C

oss

C

rss

4

E-S

DS

I = -8.9A

D

2

T

C , JUNCTION CAPACITANCE (pF)

100

024681012

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 19 Typical Junction Capacitance

1

D = 0.9

D = 0.7

D = 0.5

E

D = 0.3

GS

-V ,

0

0 5 10 15 20 25 30 35 40

Q , TOTAL GATE CHARGE (nC)

g

Figure 20 Gate-Charge Characteristics

0.1

ESIS

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

R (t) = r(t) * R

θθ

JA JA

R = 104°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Figure 21 Transient Thermal Resistance

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D

1

0︵4

x

︶

y

x

E

1DE

1

Ø1.000 Depth 0.07±0.030

c

e

0

1︵4

x

︶

A

1

Seating Plane

E

2

b

1︵8

x

︶

b︵8

x

︶

1

D

L

3

k

1

D

2

e/2

b

2︵2

x

k

L

4

D

2

︶

M

DETAIL

A

DETAIL

A

L

a

L

1

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

8

X

4

X

Y

2

Y

3

X

1

X

2

C

Y

1

G

1

Y︵4

x

︶

G

Dim Min Max Typ

A 0.90 1.10 1.00

A1 0 0.05 0.02

b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25

c 0.23 0.33 0.277

D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 - - 3.98

E 6.15 BSC

E1 5.75 5.85 5.80 E2 3.56 3.76 3.66

e 1.27BSC k - - 1.27

k1 0.56 - -

L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 - - 0.125

M 3.50 3.71 3.605

x - - 1.400

y - - 1.900

θ 10° 12° 11° θ1 6° 8° 7°

Dimensions

C 1.270

G 0.660

G1 0.820

X 0.610 X1 3.910 X2 1.650 X3 1.650 X4 4.420

Y 1.270 Y1 1.020 Y2 3.810 Y3 6.610

DMC1017UPD

PowerDI5060-8

All Dimensions in mm

Value

(in mm)

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMC1017UPD

POWERDI is a registered trademark of Diodes Incorporated.

DMC1017UPD

Document number: DS36903 Rev. 1 - 0

9 of 9

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April 2014

Diodes DMC1017UPD User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual