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DMC1017UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Device
Q1 12V
Q2 -12V
V
R
(BR)DSS
17m @ V
25m @ VGS = 2.5V
32m @ V
53m @ VGS = -2.5V
DS(ON)
GS
GS
= 4.5V
= -4.5V
TA = +25°C
9.5A
7.8A
-6.9A
-5.4A
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize R
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
• Notebook Battery Power Management
• DC-DC Converters
• Loadswitch
Top View
Pin1
Bottom View
and yet maintain
DS(on)
I
D
G1
Features and Benefits
• Thermally Efficient Package-Cooler Running Applications
• High Conversion Efficiency
• Low R
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
– Minimizes On State Losses
DS(ON)
Mechanical Data
• Case: POWERDI5060-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.097 grams (approximate)
D1
G2
S1
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
D2
S2
S1
G1
S2
G2
Top View
Pin Confi
Ordering Information (Note 4)
Part Number Case Packaging
DMC1017UPD-13 POWERDI5060-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 0
D1 D2 D2
C1017UD
S1D1G1 S2 G2
www.diodes.com
= Manufacturer’s Marking
C1017UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
1 of 9
© Diodes Incorporated
®
5060-8
uration
April 2014
D1
D1
D2
D2
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DMC1017UPD
Maximum Ratings (@T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Body Diode Forward Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Q1
V
DSS
V
GSS
= +25°C
Steady
State
t<10s
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
I
D
I
D
I
S
I
DM
I
AS
E
AS
alue Q2 Value Units
12 -12 V
±8 ±8 V
9.5
7.6
13.0
10.4
-6.9
-5.5
-9.4
-7.5
A
A
2 -2 A
50 -35 A
9.7 -9.2 A
4.7 4.3 mJ
Thermal Characteristics
Characteristic Symbol
T
= +25°C
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
A
TA = +70°C
Steady state
t<10s 29
P
R
R
T
J, TSTG
JA
JC
D
Electrical Characteristics Q1 N-Channel (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
12
BV
DSS
I
⎯ ⎯
DSS
⎯ ⎯
I
GSS
⎯ ⎯
1 µA
±100
V
VGS = 0V, ID = 250µA
VDS = 12V, VGS = 0V
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
R
DS(ON)
V
GS(th)
SD
0.6
⎯
⎯
⎯
⎯
9.6 17
11 25
0.7 1.2 V
1.5 V
VDS = VGS, ID = 250µA
V
m
VGS = 2.5V, ID = 9.8A
VGS = 0V, IS = 2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
AS
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
⎯
iss
C
oss
C
⎯
rss
R
⎯
G
Q
g
Q
⎯
g
Q
⎯
gs
Q
gd
t
⎯
D(on)
t
⎯
r
t
D(off)
t
⎯
f
t
rr
Q
rr
⎯
⎯
⎯
⎯
—
—
1787
297
265
1.6
18.6
35.4
2.7
3.8
6.9
10.9
70.3
31.8
13.1 —
2.2 —
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
pF
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
V
V
nS
V
nS
I
F
nC
I
F
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 0
2 of 9
www.diodes.com
alue Units
2.3
1.5
54
4.1
-55 to +150 °C
= 4.5V, ID = 11.8A
GS
= 6V, VGS = 0V,
DS
= 6V, ID = 11.8A
DS
= 6V, RL = 6
DD
= 4.5V, RG = 6, ID = 1A
GS
= 11.8A, di/dt = 100A/s
= 11.8A, di/dt = 100A/s
© Diodes Incorporated
W
°C/W
April 2014
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DMC1017UPD
20.0
15.0
(A)
EN
10.0
V= 8.0V
GS
V= 4.5V
GS
V= 4.0V
GS
V= 3.0V
GS
V= 2.5V
GS
V= 2.0V
GS
AIN
D
5.0
I, D
V= 1.2V
0.0
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Figure 1 Typical Output Characteristics
0.015
Ω
0.012
V= 1.5V
GS
V= 1.3V
GS
20
V = 5.0VDS
18
16
14
(A)
12
10
8
AIN
6
D
I, D
4
2
0
0 0.5 1 1.5 2 2.5
T = 150°C
A
T = 125°C
A
V , GATE-SOURCE VOLTAGE (V)
GS
T = 85°C
A
T = 25°C
A
T = -55°C
A
Figure 2 Typical Transfer Characteristics
0.015
Ω
0.012
V = 4.5VGS
T = 125°C
A
T = 150°C
A
ESISTANCE ( )
CE
AIN-S
, D
DS(ON)
E
AIN-S
, D
DS(ON)
0.009
0.006
V = 2.5VGS
V = 4.5VGS
0.003
0
0 2 4 6 8 10 12 14 16 18 20
I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.5
2
V= V
2.5
1.5
GS
I= 5A
D
1
0.5
ON-RESISTANCE (NORMALIZED)
V = 4.5V
GS
I= 10A
D
T = 85°C
ESISTANCE ( )
CE
0.009
T = 25°C
A
A
T = -55°C
A
0.006
AIN-S
0.003
, D
DS(ON)
0
0 2 4 6 8 101214161820
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.015
Ω
E ( )
V=.5V
2
GS
I= 5A
D
AN
0.01
ESIS
V= V
4.5
GS
I = 10A
D
0.005
AIN-S
, D
DS(ON)
0
-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variat ion wi th Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 0
3 of 9
www.diodes.com
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation wi th Temperature
April 2014
© Diodes Incorporated