Page 1
Y
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
Features
• N-Channel MOSFET and PNP Transistor in One Package
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected MOSFET Gate up to 2kV
• Lead, Halogen and Antimony Free, RoHS Compliant (Note
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED TO 2kV
Top View
1)
SOT563
DMB54D0UV
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
D
Bottom View
2
Q
1
S
2
Top View
Internal Schematic
E
B
Q
2
G
C
2
Ordering Information (Note 3)
Part Number Case Packaging
DMB54D0UV-7 SOT563 3,000/Tape & Reel
DMB54D0UV-13 SOT563 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
M2B
M
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
www.diodes.com
MB2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
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March 2012
© Diodes Incorporated
Page 2
θ
)
Maximum Ratings – MOSFET, Q1 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Continuous
Pulsed Drain Current (Note 4)
Maximum Ratings - PNP Transistor, Q2 @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
DSS
V
GSS
I
D
I
DM
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
50 V
±12
160 mA
560 mA
-50 V
-45 V
-5.0 V
-100 mA
DMB54D0UV
V
Thermal Characteristics, Total Device @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
P
D
R
JA
, T
T
J
STG
250 mW
500
-55 to +150
°C/W
°C
Electrical Characteristics - MOSFET @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
50
⎯ ⎯
⎯ ⎯
⎯ ⎯
10
1.0
5.0
V
VGS = 0V, ID = 250μA
μA
μA
= 50V, VGS = 0V
V
DS
= ±8V, V
V
GS
= ±12V, V
V
GS
DS
DS
= 0V
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
GS(th
R
DS (ON)
g
FS
0.7 0.8 1.0 V
⎯
⎯
180
3.1 4
4 5
⎯ ⎯
VDS = VGS, ID = 250μA
V
= 4V, ID = 100mA
Ω
mS
GS
= 2.5V, ID = 80mA
V
GS
= 10V, ID = 100mA,
V
DS
f = 1.0KHz
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
C
iss
C
oss
C
rss
⎯
⎯
⎯
25
5
2.1
⎯
⎯
⎯
pF
pF
pF
V
= 10V, V
DS
f = 1.0MHz
GS
= 0V,
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
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March 2012
© Diodes Incorporated
Page 3
(BR)
(BR)
(BR)
R
CUR
RENT
R
CUR
RENT
Electrical Characteristics - PNP Transistor @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage (Note 5)
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Cutoff Current (Note 5)
Collector-Emitter Cut-Off Current (Note 5)
Gain Bandwidth Product
Output Capacitance
V
V
V
h
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
I
C
FE
CBO
CES
f
T
OB
-50 — — V
CBO
-45 — — V
CEO
EBO
-5 — — V
220 290 475 —
—
— — -700
-600— — — -750
—
—
— — -100 nA
— — -100
-400
-900 — —
-820
— — -15
-4.0
100 — — MHz
— — 4.5 pF
mV
mV
mV
Noise Figure NF — — 10 dB
DMB54D0UV
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = -5.0V, IC = -2.0mA
= -10mA, IB = -0.5mA
I
C
I
= -100mA, IB = -5.0mA
C
= -10mA, IB = -0.5mA
I
C
= -100mA, IB = -5.0mA
I
C
= -5.0V, IC = -2.0mA
V
CE
V
= -5.0V, IC = -10mA
CE
V
nA
µA
= -30V
CB
= -30V, TA = 150°C
V
CB
VCE = -45V
VCE = -5.0V, IC = -10mA, f = 100MHz
VCB = -10V, f = 1.0MHz
= -0.2mA, VCE = -5.0Vdc,
I
C
R
= 2.0KΩ, f = 1.0KHz, BW = 200Hz
S
MOSFET
0.8
V = 10V
0.7
0.6
GS
V = 4.5V
GS
(A)
0.5
V = 3.0V
GS
0.4
V = 2.5V
AIN
D
I, D
0.3
0.2
0.1
0
GS
V = 1.5V
GS
V = 1.0V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
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0.5
V = 10V
DS
(A)
AIN
D
I, D
0.4
0.3
0.2
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
T = 125°C
A
0.1
0
01 234
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
March 2012
© Diodes Incorporated
Page 4
R
R
OUR
CE ON-R
TANC
C, CAPACITAN
C
F
OUR
CE C
URR
N
T
10
Ω
V= 2.5V
GS
V = 4.0V
GS
DS(ON)
1
R , DRAIN-SOURCE ON-RESISTANCE ( )
0.001 0.01 0.1 1
I , DRAIN CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain C urrent and Gate Voltage
2.0
1.8
V = 4V
1.6
1.4
1.2
GS
I = 100mA
D
V = 2.5V
GS
I = 80mA
D
1.0
0.8
DS(ON)
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On- Resistance Variation with Tempera ture
DMB54D0UV
10
Ω
E ( )
ESIS
AIN-S
, D
DS(ON)
1
0 0.1 0.2 0.3 0.4 0.5
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperatu r e
35
30
)
25
C
iss
E (p
20
15
10
5
C
oss
C
rss
0
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 150°C
A
T = 125°C
A
T = 85°C
I , DRAIN CURRENT (A)
D
f = 1MHz
V = 0V
GS
Fig. 6 Typical Capacitance
A
T = 25°C
A
T = -55°C
A
1.1
1
1.0
0.1
0.9
0.8
0.7
I = 250µA
D
(A)
E
0.001
S
I, S
0.01
T = 150°C
T = 125°C
A
T = 85°C
A
A
T = 25°C
A
T = -55°C
A
0.6
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0.5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gat e Threshold V a r iation vs. Ambient Temperature
0.0001
0.1 0.3 0.5 0.7 0.9 1.1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Vol t age vs. Current
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
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Page 5
P, P
OWER
PAT
O
N
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
G
T
H
P
R
ODUCT
H
DMB54D0UV
300
250
(mW)
200
I
150
DISSI
100
D
50
RC/W
°
= 500
θ
JA
0
-50 0
T , AMBIENT TEMPERATURE ( C)
A
50
100 150
°
Fig. 9 Derating Curve - Total Package Power Dissipation
PNP Transistor
1,000
T = 150°C
A
V = 5V
CE
0.5
0.4
I
C
= 10
I
B
100
T = 25°C
A
T = -50°C
A
10
FE
h, D
1
110100
I , COLLECTOR CURRENT (mA)
C
Fig. 10 Typical DC Current Gain vs. Collector Current
1,000
V = 5V
z)
CE
(M
100
1,000
-EMI
0.3
LLE
0.2
T = 150°C
A
SATURATION VOLTAGE (V)
CE(SAT)
0.1
V,
0
0.1 10 100
Fig. 11 Collector-Emitter Saturation Voltage
1
I , COLLECTOR CURRENT (mA)
C
T = 25°C
A
vs. Collector Current
T = -50°C
A
1,000
AIN-BANDWID
t
f,
10
1
I , COLLECTOR CURRENT (mA)
C
10
100
Fig. 12 Typica l Ga in-Bandwidth Product vs . C ollector Current
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
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Page 6
Package Outline Dimensions
A
K
D
G
H
Suggested Pad Layout
Z
C2
G
Y
X
C2
DMB54D0UV
B
C
M
L
C1
Dim Min Max Typ
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
SOT563
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
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Page 7
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMB54D0UV
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
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