Diodes DMB53D0UV User Manual

Y

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features

• N-Channel MOSFET and NPN Transistor in One Package

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected MOSFET Gate up to 2kV

• Lead, Halogen and Antimony Free, RoHS Compliant (Note

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

ESD PROTECTED TO 2kV

Top View

1)

SOT563

DMB53D0UV

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

D

Bottom View

2

Q

1

S

2

Top View

Internal Schematic

E

B

Q

2

G

C

2

Ordering Information (Note 3)

Part Number Case Packaging

DMB53D0UV-7 SOT563 3000/Tape & Reel

DMB53D0UV-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

MB1

M

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

www.diodes.com

MB1 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

1 of 7

March 2012

© Diodes Incorporated

θ

)

Maximum Ratings – MOSFET, Q1 @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Continuous
Pulsed Drain Current (Note 4)

Maximum Ratings - NPN Transistor, Q2 @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current

V

DSS

V

GSS

I

D

I

DM

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

I

C

50 V
±12
160 mA
560 mA

50 V

45 V

6.0 V

100 mA

DMB53D0UV

V

Thermal Characteristics, Total Device @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

250 mW
500

-55 to +150

°C/W

°C

Electrical Characteristics - MOSFET @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

50

⎯ ⎯

⎯ ⎯
⎯ ⎯

10

1.0

5.0

V

VGS = 0V, ID = 250μA

μA

V

= 50V, VGS = 0V

DS

= ±8V, V

V

μA

GS

= ±12V, V

V

GS

DS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

GS(th

R

DS (ON)

g

FS

0.7 0.8 1.0 V

⎯
⎯

180

3.1 4
4 5

⎯ ⎯

VDS = VGS, ID = 250μA
V

= 4V, ID = 100mA

Ω

mS

GS

= 2.5V, ID = 80mA

V

GS

= 10V, ID = 100mA,

V

DS

f = 1.0KHz

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

C

iss

C

oss

C

rss

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

⎯
⎯
⎯

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25

5

2.1

⎯
⎯
⎯

pF
pF
pF

V

= 10V, V

DS

f = 1.0MHz

= 0V,

GS

March 2012

© Diodes Incorporated

(BR)

(BR)

(BR)

R

CUR

RENT

R

CUR

RENT

Electrical Characteristics - NPN Transistor @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage (Note 5)
DC Current Gain (Note 5)

Collector-Emitter Saturation Voltage (Note 5)

Base-Emitter Saturation Voltage (Note 5)

Base-Emitter Voltage (Note 5)

Collector-Cutoff Current (Note 5)
Collector-Emitter Cut-Off Current (Note 5)
Gain Bandwidth Product
Output Capacitance

V
V
V

h

V

CE(SAT)

V

BE(SAT)

V
I

CBO

I

CBO

I

CES

C

FE

BE

f

T

OBO

CBO
CEO
EBO

50 — — V
45 — — V

6 — — V

200 290 450 —

— —

—

580

—
— —
— — 100 nA

700
900

660

—

100
300

— mV

700
770

15

5.0

100 — — MHz

— — 4.5 pF

mV

mV

Noise Figure NF — — 10 dB

IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA

= 10mA, IB = 0.5mA

I

C

= 100mA, IB = 5.0mA

I

C

I

= 10mA, IB = 0.5mA

C

I

= 100mA, IB = 5.0mA

C

= 5.0V, IC = 2.0mA

V

CE

V

= 5.0V, IC = 10mA

CE

V

nA
µA

= 30V

CB

= 30V, TA = 150°C

V

CB

VCE = 45V
V

= 5.0V, IC = 10mA,

CE

f = 100MHz
VCB = 10V, f = 1.0MHz
V

= 5V, RS = 2.0kΩ,

CE

f = 1.0kHz, BW = 200Hz

DMB53D0UV

MOSFET

0.8

V = 10V

0.7

0.6

GS

V = 4.5V

GS

(A)

0.5

V = 3.0V

GS

0.4

V = 2.5V

AIN

D

I, D

0.3

0.2

0.1

0

GS

V = 1.5V

GS

V = 1.0V

GS

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

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www.diodes.com

0.5

V = 10V

DS

(A)

AIN

D

I, D

0.4

0.3

0.2

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

T = 125°C

A

0.1

0

01 234

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

March 2012

© Diodes Incorporated